H30P4D HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H30P4D 40V Single P-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Load Switch
- PWM Applications
- Power Managment
Ordering Information
Part Number Package Marking Packing Qty. H30P4D TO-252 H30P4D Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage -40 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ -30 AContinuous Drain Current TC=100℃ -18.5 IDM Pulsed Drain Current -75 PD Power Dissipation 37.5 W EAS Single Pulse Avalanche Engergy L = 0.1mH, RG = 25 Ω,TC=25℃ 31 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 3.2 4 ℃/ W RθJA Thermal Resistance Junction-Ambient 43 50 ℃/ W VDSS RDS(ON)(Typ ) ID -40V 24mΩ -30A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage -40 -- -- V VGS=0V,ID=-250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=-40V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=-20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=20V ,VDS=0V VGS(TH) Gate Threshold Voltage -1.3 -1.6 -1.9 V VGS=VDS,ID=-250µA RDS(on) Static Drain- to- Source On- Resistance(Note*2) -- 24 30 mΩ VGS=-10V,ID=-20A -- 30.5 38 mΩ VGS=-4.5V,ID=-15A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1420 -- pF VGS=0V VDS=-20V f=1MHz Coss Output Capacitance -- 113 -- Crss Reverse Transfer Capacitance -- 101 -- Rg Gate Resistance -- 10.3 -- Ω f=1MHz Qg Total Gate Charge -- 31 -- nC VDS=-20V ID=-12A VGS=-10V Qgs Gate- to- Source Charge -- 6.6 -- Qgd Gate-to-Drain(" Miller") Charge -- 5.6 -- Switching Characteristics td(ON) Turn- on Delay Time -- 5 -- nS VDS=-20V RG=3Ω VGS=-10V trise Rise Time -- 38.7 td(OFF) Turn- OFF Delay Time -- 83.9 -- tfall Fall Time -- 55.7 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -0.75 -1.0 V IF=-1A,VGS=0V trr Reverse Recovery Time -- 15 -- nS IF=-12A di/dt=100A/µsQrr Reverse Recovery Charge -- 7.2 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 0.5%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Operating Area Junction-to-Case (Note E ) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )