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Technical content
Features
- Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- High ruggedness and stable temperature behavior
- Low EMI
- Pb-free lead plating; RoHS compliant
- Powerful monolithic reverse-conducting diode with low forward voltage
- Very low V CEsat and low Eoff
- Very tight parameter distribution Potential applications
- Induction Cooking
- Microwave Ovens Product validation
- Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 G C E
Description
G C E Type Package Marking IHW30N65R6 PG-TO247-3 H30ER6 IHW30N65R6 Reverse-Conducting IGBT Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.20 www.infineon.com 2021-03-22
Datasheet 2 Revision 1.20 2021-03-22
1 Package
Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Internal emitter inductance measured 5mm. (0.197in) from case LE 13.0 nH Storage temperature Tstg -55 150 °C Soldering temperature wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque , M3 screw Maximum of mounting process: 3 M 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 40 K/W
2 IGBT
Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCE Tvj ≥ 25 °C 650 V DC collector current, limited by Tvjmax IC TC = 25 °C 65 A TC = 100 °C 41 Pulsed collector current, tp limited by Tvjmax ICpuls 90 A Turn-off safe operating area VCE ≤ 650 V, tP ≤ 1 µs, Tvj ≤ 175 °C 90 A Gate-emitter voltage VGE ±20 V Transient gate-emitter voltage VGE tp ≤ 10 µs, D < 0.010 ±30 V Power dissipation Ptot TC = 25 °C 163 W TC = 100 °C 81 Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter breakdown voltage VBRCES IC = 0.2 mA, VGE = 0 V 650 V Collector-emitter saturation voltage VCE sat IC = 30.0 A, VGE = 15 V Tvj = 25 °C 1.26 1.60 V Tvj = 175 °C 1.45 IHW30N65R6 Reverse-Conducting IGBT Datasheet 3 Revision 1.20 2021-03-22
Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Gate-emitter threshold voltage VGEth IC = 0.30 mA, VCE = VGE 3.20 4.00 4.80 V Zero gate voltage collector current ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 40 µA Tvj = 175 °C 1000 Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V 100 nA Transconductance gfs IC = 30.0 A, VCE = 20 V 70.0 S Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 3036 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 32 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 11 pF Gate charge QG IC = 30.0 A, VGE = 15 V, VCE = 520 V 120 nC Turn-on delay time tdon VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 13 ns Tvj = 175 °C, IC = 30.0 A Rise time (inductive load) tr VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 11 ns Tvj = 175 °C, IC = 30.0 A Turn-off delay time tdoff VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 161 ns Tvj = 175 °C, IC = 30.0 A 183 Fall time (inductive load) tf VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 16 ns Tvj = 175 °C, IC = 30.0 A Turn-on energy Eon VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 0.73 mJ Tvj = 175 °C, IC = 30.0 A 0.82 Turn-off energy Eoff VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 0.26 mJ Tvj = 175 °C, IC = 30.0 A 0.41 IHW30N65R6 Reverse-Conducting IGBT Datasheet 4 Revision 1.20 2021-03-22
Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Total switching energy Ets VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 0.99 mJ Tvj = 175 °C, IC = 30.0 A 1.23 Soft turn-off energy Eoff VCE = 162 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Cr = 30 nF, Lσ = 70 nH, Cσ = 30 pF Tvj = 25 °C, IC = 30.0 A 0.07 mJ Tvj = 175 °C, IC = 30.0 A 0.16 IGBT thermal resistance, junction-case Rthjc 0.92 K/W Operating junction temperature Tvj -40 175 °C
3 Diode
Table 4 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj ≥ 25 °C 650 V Diode forward current, limited by Tvjmax IF TC = 25 °C 25 A TC = 100 °C 15 Diode pulsed current, limited by Tvjmax IFpuls 90 A Power dissipation Ptot TC = 25 °C 38 W TC = 100 °C 19 Table 5 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 30.0 A Tvj = 25 °C 1.49 1.90 V Tvj = 175 °C 1.65 Reverse leakage current IR VR = 650 V Tvj = 25 °C 40 µA Tvj = 175 °C 1000 IHW30N65R6 Reverse-Conducting IGBT Datasheet 5 Revision 1.20 2021-03-22
Table 5 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode reverse recovery time trr VR = 400 V Tvj = 25 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 90 ns Tvj = 175 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 111 Diode reverse recovery charge Qrr VR = 400 V Tvj = 25 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 2.00 µC Tvj = 175 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 2.90 Diode peak reverse recovery current Irrm VR = 400 V Tvj = 25 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 35.0 A Tvj = 175 °C, IF = 30.0 A, -diF/dt = 1000 A/µs 44.0 Diode peak rate off fall of reverse recovery current dIrr/dt VR = 400 V Tvj = 25 °C, IF = 30.0 A, -diF/dt = 1000 A/µs -1221 A/µs Tvj = 175 °C, IF = 30.0 A, -diF/dt = 1000 A/µs -1149 Diode thermal resistance, junction-case Rthjc 3.94 K/W Operating junction temperature Tvj -40 175 °C IHW30N65R6 Reverse-Conducting IGBT Datasheet 6 Revision 1.20 2021-03-22
4 Characteristics diagrams
Power dissipation as a function of case temperature, IGBT Ptot = f(Tc) Tvj≤175 °C Collector current as a function of case temperature, IGBT IC = f(Tc) Tvj≤175 °C, VGE = 15 V 25 50 75 100 125 150 175 120 150 180 25 50 75 100 125 150 175 Typical output characteristic, IGBT IC = f(VCE) Tvj = 25 °C Typical output characteristic, IGBT IC = f(VCE) Tvj = 175 °C IHW30N65R6 Reverse-Conducting IGBT Datasheet 7 Revision 1.20 2021-03-22
Typical transfer characteristic, IGBT IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature, IGBT VCEsat = f(Tvj) VGE = 15 V 2 3 4 5 6 7 8 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical switching times as a function of collector current, IGBT t = f(IC) RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = 10.0 Ω Typical switching times as a function of gate resistor, IGBT t = f(RG) IC = 30.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 0 10 20 30 40 50 60 70 80 90 100 1000 0 10 20 30 40 50 60 70 80 100 1000 10000 IHW30N65R6 Reverse-Conducting IGBT Datasheet 8 Revision 1.20 2021-03-22
Typical switching times as a function of junction temperature, IGBT t = f(Tvj) IC = 30.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω Gate-emitter threshold voltage as a function of junction temperature, IGBT VGEth = f(Tvj) IC = 0.30 mA 25 50 75 100 125 150 175 100 1000 25 50 75 100 125 150 Typical switching energy losses as a function of collector current, IGBT E = f(IC) RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = 10.0 Ω Typical switching energy losses as a function of gate resistor, IGBT E = f(RG) IC = 30.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IHW30N65R6 Reverse-Conducting IGBT Datasheet 9 Revision 1.20 2021-03-22
Typical switching energy losses as a function of junction temperature, IGBT E = f(Tvj) IC = 30.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω Typical soft-switching turn-off energy loss as a function of collector current, IGBT E = f(IC) RGoff = 10.0 Ω, Tvj = 175 °C, VGE = 0/15 V 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Typical gate charge, IGBT VGE = f(QGE) IC = 30.0 A Typical capacitance as a function of collector-emitter voltage, IGBT C = f(VCE) f = 100 kHz, VGE = 0 V 0 20 40 60 80 100 120 0 5 10 15 20 25 30 100 1000 10000 IHW30N65R6 Reverse-Conducting IGBT Datasheet 10 Revision 1.20 2021-03-22
IGBT transient thermal resistance, IGBT Zth = f(tp) D = tp/T Diode transient thermal impedance as a function of pulse width, Diode Zth = f(tp) D = tp/T 1E-8 1E-7 1E-6 1E-5 0.00010.001 0.01 0.1 1E-5 0.0001 0.001 0.01 0.1 1E-6 1E-5 0.0001 0.001 0.01 0.1 0.01 0.1 Typical reverse recovery time as a function of diode current slope, Diode trr = f(diF/dt) VR = 400 V, IF = 30.0 A Typical reverse recovery charge as a function of diode current slope, Diode Qrr = f(diF/dt) VR = 400 V, IF = 30.0 A 500 600 700 800 900 1000 1100 1200 1300 100 150 200 250 300 500 600 700 800 900 1000 1100 1200 1300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IHW30N65R6 Reverse-Conducting IGBT Datasheet 11 Revision 1.20 2021-03-22
Typical reverse recovery current as a function of diode current slope, Diode Irr = f(diF/dt) VR = 400 V, IF = 30.0 A Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode dIrr/dt = f(diF/dt) VR = 400 V, IF = 30.0 A 500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300 -1800 -1600 -1400 -1200 -1000 -800 -600 -400 -200 Typical diode forward current as a function of forward voltage, Diode IF = f(VF) Typical diode forward voltage as a function of junction temperature, Diode VF = f(Tvj) 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 IHW30N65R6 Reverse-Conducting IGBT Datasheet 12 Revision 1.20 2021-03-22
5 Package outlines
5.44 c Q D E e L S P A b 0.38 6.04 5.35 1.00 3.40 3.85 20.70 13.08 15.50 0.51 3.50 19.80 12.38 1.60 4.70 2.20 1.00 1.50 2.57 0.89 6.30 6.25 17.65 2.60 5.10 14.15 3.70 21.50 16.30 20.40 1.35 4.50 2.41 5.30 2.60 1.40 2.50 3.43 REVISION 25.07.2018 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm DOCUMENT NO. Z8B00003327 DIMENSIONS MIN. MAX. 3:1 2 3 4 Figure 6 IHW30N65R6 Reverse-Conducting IGBT Datasheet 13 Revision 1.20 2021-03-22
6 Testing conditions
t a b td(off) tf trtd(on) 90% IC 10% IC 90%IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff= x xd CE C E t t V I ton= x xd CE C CC dI /dtF dI I,V FigureA. FigureB. FigureC. D efin ition of dio de swi tchin g chara cteri stics FigureE. D ynami c test circ u it FigureD. I (t)C Parasitic inductanceL , parasitic capacitor C , reliefcapacitorC , (onlyforZVTswitching) s s r t t t Q Q Q rr a b rr a b = + = + Qa Qb V (t)CE VGE(t) I (t)C V (t)CE Figure 7 IHW30N65R6 Reverse-Conducting IGBT Datasheet 14 Revision 1.20 2021-03-22
Revision history
Revision Date of release Description of changes 1.00 2020.12.21 Final datasheet 1.20 2021.03.21 Dynamic characteristic change from 1000 kHz to 100 kHz IHW30N65R6 Reverse-Conducting IGBT Datasheet 15 Revision 1.20 2021-03-22
All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-22 Published by Infineon Technologies AG
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