H30D30 MOSPEC | Alldatasheet
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a MOSPEC H30D30 thru H30D60 ST Switchmode A A 7 HIGH EFFICIENCY Dual High Efficiency Power Rectifiers RECTIFIERS ... Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have aon. ap VOLTS the following features: ~ * High Surge Capacity * Low Power Loss, High efficiency * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction * Low Forward Voltage , High Current Capability * High-Switching Speed 75 & 100 Nanosecond Recovery Time * Plastic Material used Carries Underwriters Laboratory MAXIMUM RATINGS TO-247 (3P) Characteristic [soo Peak Repetitive Reverse Voltage Var A t Working Peak Reverse Voltage Vewm 300 | 400 500 Vv at DC Blocking Voltage Ve er 12 syete Average Rectifier Forward Current Leavy A Halles) re Per Leg T,=125°C 15 Per Total Device 30 7K Peak Repetitive Forward Current A ( Rate V, Square Wave,20kHz,T.=125°C ) 30 Non-Repetitive Peak Surge Current A |_ min] Mmax| (Surge applied at rate load conditions 200 A - | 16.2 halfware,single phase,60Hz ) B 17 27 Cc | 5.0 6.0 Operating and Storage Junction T, , Tag °C D - | 23.0 Temperature Range - 65 to + 150 E | 148 | 152 F 11.7 | 12.7 G - 45 ELECTRICAL CHARACTERISTICS 4 - ae - 5 K | 5.25 | 5.65 | 30 | 40 | so | 60 | t lots | Maximum Instantaneous Forward Voltage Ve Vv M 47 5.3 (|,=15 Amp, T, = 25 °C) 1.30 1.50 5 lone | one Maximum Instantaneous Reverse Current uA 1 2 , Common Cathod| (Rated Oc vatage = 125° "| og [FI poral aoe oe Rated DC Volt Te = 125 °C: ( Rate otag®, Te ) 700 eT 2_ Common Anode Reverse Recovery Time T,, 3 Suffix" A" orKe Double Typical Junction Capacitance Cc, pF 3 Suffix" D" ( Reverse Voltage of 4 volts & f=1 MHz) 150 120
FIG-1 TYPICAL FORWARD CHARACTERISTICS se_ FOS FORWARD CURRENT DERATING CURVE 100 eee = | p+} ae zs = z [rea eee A K | & Ne le = 2 — > TTA ee s | | NT a en A Ae | e ° T = a A Ca SC gy 3 fet ft ty tt a a a e L/P Tt tt | tt carmrsnnstn 5 eos 1 12 1 t8 18 2 22 28 son_FIO-A TYPICAL JUNCTION CAPACITANCE ~ KK] ooo | FORWARD VOLTAGE (Volts.) = Seeitt HHH € SS tooo3040 Po RA
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z™ eta R es ote EEE * = ws0p60.60 fH FIG-2 TYPICAL REVERSE CHARACTERISTICS. 5 ' eaneoea SSH —— fa re | im i inna £ rr rr ee eA REVERSE VOLTAGE (os) FA a a ee 250 — Too a SSS SSS SSS SS e wm +— a 5 oT HA a rr a ne, eT |) 5 = aliiimeeeeseatin 3 100 | > PERCENT OF PEAK REVERSE VOLTAGE(*) 3 oe a) |
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600 NI 100 NI — |, —
lem, NOPE OL cove | Cais oe aioe en 1 cee ee HH ASHE ite ri Note: wl IAT Tt tt 4. Rise Time =7 ns max. Input impedance =1 M 0,22 pF 2. Rise Time = 10 nu max. Input impedance = 50.0. Set tme base for 20/50 nsidiv Fig-6 Reverse Recovery Time Characteristic and Test Circuit Diagram