H300N6HT HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H300N6HT TO-220 Absolute Maximun Ratings °C( )T =25 unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage ( )1Continuous Drain Current , T =25°CC ( )3Power dissipation , T =25°CC Operating Junction and Storage Temperature ±20 300 800 290 -55 ~ +150 Value V w A V = 60 VDS ( )R =1.7mΩ Max(on)DS I = 800A D,pulse Q = 135nCg Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 Package & Pin information D-Pin2 G-Pin1 S-Pin3 Packing Qty. ( )2Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS ( )4Single pulsed avalanche energy 540 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 0.42 °C/W RθJC RθJA Thermal Resistance from Junction to Ambient IS A( )2Diode pulsed current , T =25 °CCIS,pulse TO-220 800 G D S 300 H300N6HT Tube 50 PCS

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 ( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V( )BR DSS V ( )GS th IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage Typ. Test Conditions V =0, I =250uAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250uAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current V =0, V =±20VDS GSnA±100 295 Input Capacitance Output Capacitance Reverse Transfer Capacitance 9000 4170 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =30VDS 10VV =GS I =100AD 2ΩR =G(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge 135 nC V =30VDS 10VV =GS I =100AD μA V =60V, V =0,T =25°CDS GS J1 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =50AGS S Max. V =30V R I =100ΑS di/dt=100A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 154 Min. V R ( )DS on Drain-Source On-State Resistance 1.3 1.7 mΩ V =10V, I =50A,T =25°CGS D J IGSS Gate resistanceRG 2.4 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 5.0 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 3.2 trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( )3 Pd is based on max. junction temperature, using junction-case thermal resistance. ( )4 V =50V,V =10 V, L=0.3 mH, starting T =25 °CDD GS J

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg 120 20 V =30VDS I =100AD ( )Gate-Source Voltage-V VGS 60 80 100 140 Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 0 4 6 8 ( )Drain-Sourc T =25°CJ e Current-I AD VGS =5.5V 10V 150 250 VGS =5V Fig.5 Drain-source on-state resistanc VGS =4.5V e ( )On Resistance -R mΩDS(on) ( )Junction Temperature-T °CJ -25 75 125 17515010050250-50 V =10VGS I =50AD 1.2 3.6 0.6 1.8 2.4 3.0 Fig.6 Drain-source on-state resistance ( )Drain current-I AD 4804201800 On Resistance -R (mΩ)DS(on) 1.0 300 5.0 2.0 3.0 4.0 V =10VGS V =6.5VGS V =5.5VGS V =6VGS Fig.2 Typcal transfer characteristics ( )Gate-Source Voltage-V VGS ( )Drain-Source Current-I AD 2 4 6 8 100 1000 0.1 10 0 V =10VDS T =25°CJ ( )Capacitance pF Fig.3 Typical Capacitance vs. D-S Voltage ( )Drain-Source Voltage-V VDS 15 30 45 60 010 210 410 Coss Ciss Crss V =0GS f =100kHz

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 Electrical Characteristics Diagrams -25 Fig.7 Threshold voltage 75 125 175 ( )Junction Temperature-T °CJ 15010050250-50 3.5 2.0 2.5 3.0 1.0 ( )Threshold voltage-V VGS(th) 1.5 I =250uAD Source-drain voltage -V (V)SD 0.8 1.2 1.6 2.0 110 310 Source current- I (A)S Fig.8 Forward characteristic of body diode 0.4 T =25°CJ Fig.9 Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 ( )Drain-Source Continupus Current-I AD 100 200 300 150 250 Fig.10 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD T =25°CC T =150°CJmax 0.1 1E4 1E3 1E2 1E1 1E0 10 100 0.1ms 0.01ms 1ms R LimitedDS(on) 10ms DC ( )Pulse Width-t sec Fig.11 Typical Characteristics ( )Thermal Resistance -Z °C/WthJC 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E-4 1E-2 1E0 1E-1 1E-3 Single PDM Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + Duty=1 0.5 0.2 0.1 0.05 0.02 0.01 1E-6

A c H E D L b e e Q ΦP BACK VIEW www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5 UNIT: mm TO-220 Package Dimension Symbol A 4.704.40 b c D e E L ΦP MIN NOM MAX 4.60 1.401.14 1.28 0.900.70 0.80 1.471.20 1.27 0.600.38 0.48 16.014.7 15.3 9.68.4 9.0

2.54 BCS

10.69.80 10.0 E1 8.657.50 14.0012.59 13.5 3.803.20 3.50 3.943.50 3.72 Q 3.042.44 2.74 A2 2.862.26 2.54 D2 14.311.2 12.0 H 6.86.1 6.45