H300N4HFD HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H300N4HFD TOLL Absolute Maximun Ratings ( )T =25°C unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature ±20 300 Value V W A V = 40VDS ( )R =1.1mΩ Typ(on)DS I = 1200A D,pulse Q = 75nCg www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Package & Pin information D-Pin9 G-Pin1 S-Pin2,3,4,5,6,7,8 Packing Qty. (2)Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy mJ Thermal Characteristics Parameter Unit Thermal Resistance from Junction to Case Value 0.67 °C/W 62(4)Thermal Resistance from Junction to Ambient IS A(2)Diode pulsed current , T =25 °CCIS,pulse 1 2 3 4 5 6 7 8 D G S S S S S S S TOLL 300 H300N4HFD Tape&reel 1200 PCS N-Channel Power MOSFET Symbols RθJC RθJA Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply 1200 1200 220 240 -55 ~ +175

( )Electrical Characteristics T =25°C unless otherwise specifiedJ Parameter V Unit V( )BR DSS V ( )GS th Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage Typ. Test Conditions V =0, I =250μAGS D t ( )d on tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current -0.1 μA V =40V, V =0VDS GSμA1 Input Capacitance Output Capacitance Reverse Transfer Capacitance 5640 1430 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =20VDS V =10VGS I =50AD R =2Ω( )G ext Total Gate Charge Gate to Source Charge ( )Gate to Drain Miller Charge nC V =20VDS V =10VGS I =50AD μA V =20VGS0.1 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =50AGS S Max. V =20V R I =50ΑS di/dt=100A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 80 Min. V RDS(on) Drain-Source On-State Resistance 1.1 1.3 mΩ V =10V, I =50AGS D IGSS Gate resistanceRG V =-20VGS 2.9 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 4.9 V Qg Qgs Qgd tr t ( )d off 1.3 AIrrm Peak reverse recovery current 2.7 trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( )3 Pd is based on max. junction temperature, using junction-case thermal resistance. 2( )4 The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25°C.A ( )5 V =50V, V =10V, L=0.3mH, starting T =25 °CDD GS J www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5 IDSS

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams 1.5 Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 180 0 3.0 4.5 6.0 ( )Drain-Source Current-I AD 450 T =25°CJ V =7VGS Fig.2 Typ. transfer characteristics Gate-Source Voltage-V (V)GS Drain-Source Current-I (A)D 1086420 Drain-Source Voltage-V (V)DS Capacitance ( pF) Fig.3 Typical Capacitance vs. D-S Voltage 10 20 010 210 310 110 30 40 Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg 40 80 V =20VDS I =50AD ( )Gate-Source Voltage-V VGS Fig.5 Drain-source on-state resistance ( )On Resistance -R mΩDS(on) ( )Junction Temperature-T °CJ -50 75 125 17515010050250-75 0.6 Fig.6 Threshold Voltage 0.0 0.5 -75 ( )Threshold Voltage -V Vth 1.0 1.5 2.0 V =10VGS -110 V =10VDS T =25°CJ 210 410 510 310 110 V =0VGS f=100kHz Ciss Crss -25 0.8 1.0 1.2 1.4 1.6 2.0 2.2 ( )Junction Temperature-T °CJ I =250μAD 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 175 360 V =6.5VGS V =6VGS V =5.5VGS V =5VGS V =4.5VGS Coss V =10VGS I =50AD 200 1.6 270

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 ( )Source-drain voltage -V VSD -110 010 ( )Source current- I AS Fig.8 Forward characteristic of body diode 0.4 110 210 ( )Drain current-I AD 25050 200 100 150 ( )On Resistance -R mΩDS(on) Fig.9 Drain Current vs. Case Temperature 75 125 ( )Case Temperature-T °CC 10050250 ( )Drain-Source Continupus Current-I AD 100 150 200 Fig.10 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD Fig.11 Normalized Thermal Transient Impedance Junction-to-Case Rectangular Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Electrical Characteristics Diagrams Fig.7 Drain-source on-state resistance 300 350 400 450 V =10VGS V =7VGSV =5.5VGS V =6VGS V =6.5VGS 310 T =25°CJ 1.6 R LimitedDS(on) 0.01ms 0.1ms 1ms 10msDC -410 -310 -210 -110 010 -610 -510 -410 -310 -210 -110 010 -110 010 110 210 -110 010 110 210 310 1.8 2.0 150 175 250 300 350 Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + PDM 110 Single Pulse 0.02 0.01 0.05 0.1 0.2 0.5 D=1

Package Information

UNIT: mm www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5 Symbol A 2.452.15 b C E H MIN NOM MAX 2.30 0.850.75 0.75 0.800.70 0.70 9.959.65 9.80 0.600.45 0.50 3.453.15 3.30 9.70 9.90

1.20 BSC

4.704.40 4.55 8.257.95 8.10 e 11.8811.48 11.68 0.900.50 0.70 D 10.5810.18 10.38 L L2 0.720.48 0.60 L4 1.301.00 1.15 10.10

1.225 BSC

7.106.80 6.95 2.001.60 1.80 E L1 A D L2 b(1,8pin) e e´(2~7pin spacing) b´(2~7pin) e A c H L 1 2 3 4 5 6 7 8