H2N60D HUIXIN | Alldatasheet

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Technical content

Features

 Fast Switching  Low ON Resistance  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain -to-Source Voltage 600 V ID Continuous Drain Current 2 A Continuous Drain Current TC = 100 °C 1.3 A IDM Pulsed Drain Current 8 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 80 mJ dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns PD Power Dissipation 35 W Derating Factor above 25 °C 0.28 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 1 50 ℃ TL Maximum Temperature for Soldering 300 ℃

Applications

Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Unit s Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 600 -- -- V ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA, Reference 25℃ -- 0.67 -- V/℃ IDSS Drain to Source Leakage Current VDS =600V, VGS= 0V, VDS =480V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(O N) Drain -to-Source On -Resistance VGS=10V,ID=1A -- 3.6 4.5 Ω VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µ A 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Transconductance VDS=15V, ID =1A -- 1.8 -- S Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 335 -- pF Coss Output Capacitance -- 33 -- Crss Reverse Transfer Capacitance -- 3 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID =2A VDD = 300V RG =10Ω -- 11 -- ns tr Rise Time -- 13 -- td(OFF) Turn-Off Delay Time -- 29 -- tf Fall Time -- 12 -- Qg Total Gate Charge ID =2A VDD =480V VGS = 10V -- 9.5 -- nC Qgs Gate to Source Charge -- 1.5 -- Qgd Gate to Drain ( “Miller ”)Charge -- 4.9 -- 6GMK2UL7

Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 2 A ISM Maximum Pulsed Current (Body Diode) -- -- 8 A VSD Diode Forward Voltage IS=2.0A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS=2.0A,Tj = 25℃ dIF/dt=100A/us , VGS=0V -- 187 -- ns Qrr Reverse Recovery Charge -- 610 -- nC IRRM Reverse Recovery Current -- 6.6 -- A Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units RθJC Junction -to-Case 3.57 ℃/W RθJA Junction -to-Ambient 100 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10mH, I D=4A, Start TJ=25℃ a3：ISD =2A,di/dt ≤100A/us,V DD≤BVDS, Start TJ=25℃ 6GMK3UL7

Package Information

A 6.50 6.70 A1 5.16 5.46 B 9.77 10.17 B1 6.00 6.20 B2 2.60 3.00 B3 0.70 0.90 C 0.45 0.61 D 2.20 2.40 E 2.186 2.386 F1 0.67 0.87 F2 0.76 0.96 H 0.00 0.30 h 0.00 0.127 L 6.50 6.70 1.10 1.30 Dimensions in Millimeters MIN MAX 6GMK7UL7