H28N15HD HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H28N15HD 150V N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • UPS
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 150 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 28 AContinuous Drain Current TC=100℃ 19.7 IDM Pulsed Drain Current 45 PD Power Dissipation 83 W EAS Single Pulse Avalanche Engergy L = 0.4mH, RG = 25 Ω,TC=25℃ 20 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 1.8 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 65 ℃/ W VDSS RDS(ON)(Typ ) ID 150V 41mΩ 28A H28N15HD TO-252H28N15HD

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 150 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=150V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=150V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 41 48 mΩ VGS=10V,ID=10A Dynamic Electrical Characteristics Ciss Input Capacitance -- 500 -- pF VGS=0V VDS=75V f=1MHz Coss Output Capacitance -- 57 Crss Reverse Transfer Capacitance -- 9.9 -- Rg Gate Resistance -- 5.9 -- Ω f=1MHz Qg Total Gate Charge -- 10 -- nC VDS=75V ID=10A VGS=10V Qgs Gate- to- Source Charge -- 3.2 -- Qgd Gate-to-Drain(" Miller") Charge -- 3.8 Switching Characteristics td(ON) Turn- on Delay Time -- 11 -- nS VDS=75V ID=10A VGS=10V RG=10Ω trise Rise Time -- 7 -- td(OFF) Turn- OFF Delay Time -- 12 -- tfall Fall Time -- 3 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.9 1.2 V IF=20A,VGS=0V trr Reverse Recovery Time -- 64 -- nS VR=75V,IF=10A di/dt=100A/µsQrr Reverse Recovery Charge -- 96 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )