H270N10HFD

H270N10HFD HUIXIN | Alldatasheet

Document overview

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• PDF pages: 5

Technical content

Features

• Low R & FOM( )DS on
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery N-Channel Power MOSFET Product Name Package Marking TOLL Marking Information Packing Qty. Tape&reel 1200 PCSH270N10HFD H270N10HFD www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Parameter VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature (2)Pulsed drain current , T =25 °CC (1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy IS (2)Diode pulsed current , T =25 °CCIS,pulse

Electrical Characteristics (T =25 unless otherwise specified)J °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current V =0, V =±20VDS GSnA±100 250 Input Capacitance Output Capacitance Reverse Transfer Capacitance 7790 4230 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =50VDS 10VV =GS I =25AD 2ΩR =G Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge 106 nC V =50VDS 10VV =GS I =25AD μA V =100V, V =0DS GS1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =20AGS S Max. V =50V R I =25ΑS di/dt=100A/μs ns nC 136 Qrr Reverse Recover Time Reverse Recovery Charge 219 Min. V RDS(on) Drain-Source On-State Resistance 1.6 1.9 mΩ V =10V, I =50AGS D IGSS Gate resistanceRG 0.9 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 4.4 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 2.9 trr Note (1) Calculated continuous current based on maximum allowable junction temperature. (2) Repetitive rating; pulse width limited by max. junction temperature. (3) Pd is based on max. junction temperature, using junction-case thermal resistance. 2(4) The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A (5) V =50V,V =10 V, L=0.3 mH, starting T =25 °CDD GS j www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5

Fig1. Typ. output characteristics Drain-Source Voltage-V (V)DS 160 0 4 6 8 10 Drain-Source Current-I (A)D 240 320 400 480 6 8 10 12 100 1000 Fig2. Typ. transfer characteristics Drain-Source Current-I (A)D Gate-Source Voltage-V (V)GS V =10VDS T =25°CJ Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 120 1801509030 V =50VDS I =25AD Gate-Source Voltage-V (V)GS -25 Fig5. Drain-source breakdown voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 106 100 102 104 Drain-source breakdown voltage -V (V)(BR)DSS I =250μAD V =0GS Drain-Source Voltage-V (V)DS 20 40 60 80 100 110 210 310 410 Capacitance ( pF) Fig3. Typical Capacitance vs. Drain-to-Source Voltage V =0GS f =100kHz Coss Ciss Crss Fig6. Drain-source on-state resistance On Resistance -R (mΩ)DS(on) Junction Temperature-T (°C)J -25 75 125 17515010050250-50 V =10VGS I =50AD 1.0 1.5 2.0 2.5 3.0 3.5 T =25°CJ V =5VGS V =4.5VGS V =10VGS V =5.5VGS www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5 Electrical Characteristics Diagrams

Source-drain voltage -V (V)SD 110 310 Source current- I (A)S Fig8. Forward characteristic of body diode T =25°CJ Fig9. Drain-source on-state resistance 500 Drain current-I (A)D 4003001000 On Resistance -R (mΩ)DS(on) 200 V =5VGS V =5.5VGS V =10VGS V =4.5VGS -25 Fig7. Threshold voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 Threshold voltage-V (V)GS(th) I =250μAD 200 Fig10. Drain Current vs. Case Temperature 75 125 175 Case Temperature-T (°C)C 15010050250 100 200 350 400 150 250 300 Drain-Source Continupus Current-I (A)D 200 Fig11. Safe Operating Area Drain-Source Voltage-V (V)DS Drain-Source Current-I (A)D T =25°CC T =175°CJmax 1E3 1E2 1E1 1E0 1E-1 0.1 10 100 400 0.1ms 0.01ms 1ms 10ms DC R LimitedDS(on) Fig12. Max. transient thermal impedance Rectangular Pulse Duration (sec) 1E-4 1E-3 1E-2 1E-1 1E0 Thermal Response-Z (°C/W)thJC 1E-5 1E-3 1E-2 1E-1 1E0 D=1 0.02 0.1 0.5 0.2 0.05 Single Pulse 0.01 Duty=t /Tp www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 Electrical Characteristics Diagrams

E L1 A D L2 b(1,8pin) e e´(2~7pin spacing) b´(2~7pin) e 1 2 3 4 5 6 7 8 A c H L b´(2~7pin) 1 2 3 4 5 6 7 8

Package Information

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5 Symbol A 2.452.15 b C E H MIN NOM MAX 2.30 0.850.75 0.75 0.800.70 0.70 9.959.65 9.80 0.600.45 0.50 3.453.15 3.30 9.70 9.90

1.20 BSC

4.704.40 4.55 8.257.95 8.10 e 11.8811.48 11.68 0.900.50 0.70 UNIT: mm D 10.5810.18 10.38 L L2 0.720.48 0.60 L4 1.301.00 1.15 10.10

1.225 BSC

7.106.80 6.95 2.001.60 1.80