H24P3FA HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H24P3FA 30V Trench Single P-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. H24P3FA DFN3*3 H24P3FA Tape&reel 5000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage -30 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ -24 AContinuous Drain Current TC=70℃ -24 IDM Pulsed Drain Current -82 PD Power Dissipation 24 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 4.5 5.2 ℃/ W RθJA Thermal Resistance Junction-Ambient 49 60 ℃/ W VDSS RDS(ON)(Typ ) ID -30V 8.5mΩ -24A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage -30 -- -- V VGS=0V,ID=-250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- -1 µA VDS=-30V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage -1.0 -1.5 -2.0 V VGS=VDS,ID=-250µA RDS(on) Static Drain- to- Source On- Resistance(Note*2) -- 8.5 11.5 mΩ VGS=-10V,ID=-17A -- 12 18 mΩ VGS=-4.5V,ID=-13A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1820 -- pF VGS=0V VDS=-15V f=1MHz Coss Output Capacitance -- 237 Crss Reverse Transfer Capacitance -- 230 -- Rg Gate Resistance -- 4.4 -- Ω f=1MHz Qg Total Gate Charge -- 37 nC VDS=-15V ID=-17A VGS=-10V Qgs Gate- to- Source Charge -- 7.3 -- Qgd Gate-to-Drain(" Miller") Charge -- 7.7 -- Switching Characteristics td(ON) Turn- on Delay Time -- 9 -- nS VDS=-15V RL=0.9Ω RG=3Ω VGS=-10V trise Rise Time -- 71 -- td(OFF) Turn- OFF Delay Time -- 46 -- tfall Fall Time -- 77 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -0.73 -1.0 V IF=-1A,VGS=0V trr Reverse Recovery Time -- 13.8 -- nS IF=-17A di/dt=100A/µsQrr Reverse Recovery Charge -- 1.2 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6