H22B4 QT | Alldatasheet
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D1 [RES | REHES hres tae a 4 ae erecta cr 4 a 1 >| [AT so [32 [vie [tes T | bt [aT s00 | 7s0-| 004 [090 [2 | TT [»[ sonom [7 oeonow. [2 | 2 * J? section x. x [Pots [ee asr [are | LEAD PROFILE [9.30 [33 [ne [a [| sT1940.01 [a [ss [rs [are [205 [1 [a Tes [es [oor [110 [1] red [~e [eis [eas [20 [200 [| at a $1 T [~sT as [10 [as [08 [| aa [~s [eas [ars 106 Tsar [| na A [11 2enom YT sosnow 13] NOTES SEATING 1. INCH DIMENSIONS ARE DERIVED FROM MILLIMETERS. PLANE 2. FOUR LEADS, LEAD CROSS SECTION IS CONTROLLED | L BETWEEN 1.27 MM (.050") FROM SEATING PLANE AND THE AY tr ? END OF THE LEADS. | 3. THE SENSING AREA IS DEFINED BY THE “S” DIMENSION xy x AND BY DIMENSION ‘T” 30.75 MM (.030 INCH). = er ‘$T1340-02 od er ml i hiv \\ 'yvia iris | 1 it 1 tfd os 2 3 sT1199 The H22B Slotted Optical Switch is a gallium arsenide light emitting diode coupled to a silicon photodarlington = Opaque housing in a plastic housing. The packaging system is designed a y by i, = Low cost to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The = .035" apertures gap in the housing provides a means of interrupting the High loon signal with an opaque material, switching the output from an “ON” to an “OFF” state.
QT! SLOTTED OPTICAL SWITCH OPTOELECTRONICS ee Oo OO Eee ABSOLUTE MAXIMUM RATINGS (, = 25°C Uniess Otherwise Specified) Storage Temperature seeneeeeeeee fenae anes beeeeeeee 1. = 55°C to +100°C Operating Temperature ceeeeeee cet eeeeenes ceteeeeeee —55°C to +100°C Soldering: Lead Temperature (Iron) dene eee seen eens .+++++. 240°C for 5 sec.°*9 Lead Temperature (Flow) .. rere eee eeeeeeeeeeses++ 260°C for 10 sec.°4 INPUT DIODE OUTPUT DARLINGTON Power Dissipation veeeeeeeeeee ees veces eeeeeeeees beveeeees 150 mW (2) ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) INPUT DIODE Forward Voltage Ve _ V7 v |; =60mA Reverse Breakdown Voltage Va 6.0 - v In = 10nA Reverse Leakage Current |, _ 1.0 BA Va = 3V OUTPUT DARLINGTON Emitter-Collector Breakdown BV eco 7.0 - Vv le = 100uA, E, = 0 Collector-Emitter Breakdown BV ceo 55 - v = 1mA,E,=0 Collector-Emitter Leakage Iceo - 100 nA Vee = 45 V,E,=0 COUPLED On-State Collector Current becom See page 3. mA Saturation Voltage Voeiean See page 3. v Turn-On Time te See page 3. 2S Turn-Off Time ten See page 3. 2S 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. Derate power dissipation linearly 2.00mW/°C above 25°C. 3. RMA flux is recommended. 4, Methanol or Isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 4s" (1.6 mm) minimum from housing.
QT! SLOTTED OPTICAL SWITCH OPTOELECTRONICS ——— H22B4 Tejon, 05 — — mA |, = 2MA, Ve = 1.5V Ld PT CT H22B4 Veesan - _ 1.0 v |, = 10mA, |, = 1.8mA CT H22B4, H22B5, H22B6 ton _ 45 _ us Voc = SV, I. = 10mA, R, = 7500 H22B4, H22B5, H22B6 toe _- 250 _ aS Veo = 5V, k = 10mA, R, = 7502
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