H220N6FD HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H220N6FD 60V SGT Single N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • UPS
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. H220N6FD TOLL H220N6FD Tape&reel 2000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 60 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 220 AContinuous Drain Current TC=100℃ 140 IDM Pulsed Drain Current 760 PD Power Dissipation 150 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 520 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 0.85 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 55 -- ℃/ W VDSS RDS(ON)(Typ ) ID 60V 1.3mΩ 220A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=60V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=60V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 1.2 1.6 2.0 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 1.3 1.9 mΩ VGS=10V,ID=50A -- 1.9 2.4 mΩ VGS=4.5V,ID=45A Dynamic Electrical Characteristics Ciss Input Capacitance -- 7200 -- pF VGS=0V VDS=30V f=1MHz Coss Output Capacitance -- 1470 Crss Reverse Transfer Capacitance -- 30 -- Rg Gate Resistance -- 1.5 -- Ω f=1MHz Qg Total Gate Charge -- 49 -- nC VDS=30V ID=50A VGS=10V Qgs Gate- to- Source Charge -- 23 -- Qgd Gate-to-Drain(" Miller") Charge -- 15 Switching Characteristics td(ON) Turn- on Delay Time -- 38 -- nS VDS=30V ID=50A VGS=4.5V RG=2.5Ω trise Rise Time -- 34 -- td(OFF) Turn- OFF Delay Time -- 52 -- tfall Fall Time -- 26 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.4 V IF=50A,VGS=0V trr Reverse Recovery Time -- 68 -- nS VR=30V,IF=50A di/dt=100A/µsQrr Reverse Recovery Charge -- 122 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics VdsDrain-SourceVoltage(V) Figure1OutputCharacteristics Vgs Gate-SourceVoltage(V) Figure2TransferCharacteristics ID-Drain Current(A) Figure3Rdson-DrainCurrent TJ-JunctionTemperature(℃) Figure4Rdson-JunctionTemperature QgGate Charge(nC) Figure5GateCharge VsdSource-Drain Voltage(V) Figure6Source-DrainDiodeForward Rdson On-Resistance(mΩ) ID-Drain Current(A) ID-Drain Current(A) Vgs Gate-SourceVoltage (V)Is-ReverseDrain Current(A) NormalizedOn-Resistance 50A 50A VdsDrain-SourceVoltage(V)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6 Vds Drain-SourceVoltage(V) Figure7CapacitancevsVds VdsDrain-SourceVoltage(V) Figure8SafeOperationArea(Note 3) TA-CaseTemperature(℃) Figure9PowerDe-rating Figure10CurrentDe-rating ID-Drain Current(A) Capacitance(pF) Square WavePluse Duration(sec) Figure11NormalizedMaximumTransientThermalImpedance r(t),NormalizedEffective TransientThermalImpedance PowerDissipation (W)ID-Drain Current(A) TJ-JunctionTemperature (℃)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TOLL Unit: mm )