H210N10HFD HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply N-Channel Power MOSFET www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Symbols RθJC RθJA Parameter VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature (2)Pulsed drain current , T =25 °CC (1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy IS (2)Diode pulsed current , T =25 °CCIS,pulse Tape&reel 1200 PCS

( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current 100 μA V =0, V =±20VDS GSnA±100 177 Input Capacitance Output Capacitance Reverse Transfer Capacitance 5440 3800 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =50VDS 10VV =GS I =25AD 2ΩR =G(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge nC V =50VDS 10VV =GS I =25AD μA V =100V, V =0,T =25°CDS GS J1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =30AGS S Max. V =25V R I =25ΑS di/dt=100A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 145 Min. V R ( )DS on Drain-Source On-State Resistance 1.9 2.5 mΩ V =10V, I =50AGS D IGSS Gate resistanceRG V =100V, V =0,T =100°CDS GS J 1.3 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 4.4 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 2.8 trr Note (1) Calculated continuous current based on maximum allowable junction temperature. (2) Repetitive rating; pulse width limited by max. junction temperature. (3) Pd is based on max. junction temperature, using junction-case thermal resistance. 2(4) The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A (5) V =50V,V =10 V, L=0.3 mH, starting T =25 °CDD GS j www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5

Electrical Characteristics Diagrams 5 6 7 8 100 1000 Fig.2 Typcal transfer characteristics ( )Gate-Source Voltage-V VGS V =10VDS T =25°CJ ( )Drain-Source Current-I AD 20 40 60 80 110 210 310 410 ( )Capacitance pF Fig.3 Typical Capacitance vs. D-S Voltage ( )Drain-Source Voltage-V VDS Coss Ciss CrssV =0GS f =100kHz Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg 9015 V =50VDS I =25AD ( )Gate-Source Voltage-V VGS 45 60 75 Fig.5 Drain-source on-state resistance ( )On Resistance -R mΩDS(on) ( )Junction Temperature-T °CJ -25 75 125 17515010050250-50 V =10VGS I =50AD Fig.6 Drain-source on-state resistance 500 ( )Drain current-I AD 4003001000 On Resistance -R (mΩ)DS(on) 200 V =5.5VGS V =10VGS V =6.5VGS V =6VGS Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 200 0 4 6 8 10 T =25°CJ ( )Drain-Source Current-I AD V =5VGS100 300 400 500 V =4.5VGS V =5.5VGS V =6VGS V =6.5VGS V =7VGSV =10VGS www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5

-25 Fig.7 Threshold voltage 75 125 175 ( )Junction Temperature-T °CJ 15010050250-50 ( )Threshold voltage-V VGS(th) I =250μAD 200 Source-drain voltage -V (V)SD 0.5 1.0 1.5 2.0 110 310 Source current- I (A)S Fig.8 Forward characteristic of body diode T =25°CJ Fig.9 Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 120 210 240 150 180 ( )Drain-Source Continupus Current-I AD 200 Fig.10 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD T =25°CC T =175°CJmax 1E3 1E2 1E1 1E0 1E-1 0.1 10 100 400 0.1ms 0.01ms 1ms 10ms DC R LimitedDS(on) ( )Pulse Width-t sec Fig.11 Typical Characteristics 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E-3 1E-2 ( )Thermal Resistance -Z °C/WthJC 1E0 1E-1 Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + PDM Duty=1 Single 0.2 0.1 0.05 0.02 0.5 0.01 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 Electrical Characteristics Diagrams

Package Information

A c e´(2~7pin spacing) H L E L1 A D L2 b(1,8pin) e 1 2 3 5 6 7 8 b´(2~7pin) e TOLL www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5 Symbol A 2.452.15 b C E H MIN NOM MAX 2.30 0.850.75 0.75 0.800.70 0.70 9.959.65 9.80 0.600.45 0.50 3.453.15 3.30 9.70 9.90

1.20 BSC

4.704.40 4.55 8.257.95 8.10 e 11.8811.48 11.68 0.900.50 0.70 UNIT: mm D 10.5810.18 10.38 L L2 0.720.48 0.60 L4 1.301.00 1.15 10.10

1.225 BSC

7.106.80 6.95 2.001.60 1.80