H1A FS | Alldatasheet
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2012 08 13 1/2Revision No : 0 SEMICONDUCTOR TECHNI CAL DATA H1A ~ H1M High Efficient Rectifier Diode ■ Features ■ Outline Dimensions and Mark
- Io 1.0A
- VRRM 50V~1000V
- Glass passivated chip High surge forward current capability ■ Applications
- For general power supply single - phase rectifier Limiting Values（Absolute Maximum Rating) Item Symbol Unit Conditions A B D G J K M Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Average Rectifed Output i Current IO A 60Hz One- way half - wave, R-load,Ta=75℃ 1.0 Surge(Non-repetitive) Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 30 Storage Temperature Tstg ℃ - 55 ~+150 Juncti on Temperature Tj ℃ - 55 ~+150 ■Electrical Characteristics （Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition A B D G J K M Peak Forward Voltage VFM V IFM=1.0A 1.0 1.3 1.7 Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,IRR=0.25A 50 75 Peak Reverse Current IRRM μA VRM=VRRM , Ta=25℃ 5 Thermal Resistance RθJ- L ℃/W Between junction and lead 20 Dimensions in inches and (millimeters) SOD-123F .112(2.85) .100(2.55) .047(1.20) .039(1.00) .035(0.90) .016(0.40) .010(0.25) .004(0.10) .154(3.90) .142(3.60) .043(1.10) .035(0.90) .075(1.90) .063(1.60) .002(0.05) .001(0.02)
H1A ~ H1M ■ Characteristics( Typical) 0 20 40 60 80 100 0 01 0.1 1.0 100 Voltage(%) IR(uA) Tj=25℃ FIG4:Typical Reverse Characteristics
0.2 Io(A)
Ta℃) FIG1:Io-Ta Curve 160 Single Phase Half Wave 60Hz Resistive Load 40 80 120 0.4 0.6 0.8 1.0 1.2 IFSM(A) 2 5 10 20 50 100 FIG2:Surge Forward Current Capadility Number of Cycles s g f J D C M 0 01 0.02 0 05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0 5 Ta=25℃ H1A~ H1D H1G H1J~ H1M VR D RLIF F IR IRR t trr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time