H180N10HDC HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 7 H180N10HDC 100V Single N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • UPS
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. H180N10HDC TO-263 H180N10HDC Tape&reel 800 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 100 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 180 AContinuous Drain Current TC=100℃ 135 IDM Pulsed Drain Current 720 PD Power Dissipation 250 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 780 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 0.5 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 62.5 ℃/ W VDSS RDS(ON)(Typ ) ID 100V 2.4mΩ 180A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 7 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 100 110 -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=100V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=100V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 2.4 2.8 mΩ VGS=10V,ID=50A Dynamic Electrical Characteristics Ciss Input Capacitance -- 9000 -- pF VGS=0V VDS=50V f=1MHz Coss Output Capacitance -- 2838 -- Crss Reverse Transfer Capacitance -- 415 -- Rg Gate Resistance -- 1.2 -- Ω f=1MHz Qg Total Gate Charge -- 148 -- nC VDS=50V ID=100A VGS=10V Qgs Gate- to- Source Charge -- 47 -- Qgd Gate-to-Drain(" Miller") Charge -- 33 -- Switching Characteristics td(ON) Turn- on Delay Time -- 32 -- nS VDS=50V RG=1.6Ω VGS=10V trise Rise Time -- 40 -- td(OFF) Turn- OFF Delay Time -- 80 -- tfall Fall Time -- 35 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=50A,VGS=0V trr Reverse Recovery Time -- 80 -- nS Vgs=0V,IF=90A di/dt=100A/µsQrr Reverse Recovery Charge -- 195 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 7 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 7 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 7 Package outline drawing (TO-263 Unit: mm )