H17P6F HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H17P6F TO-220F Absolute Maximun Ratings ( )T =25 unless otherwise specifiedJ °C Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (3)Continuous Drain Current , T =25°CC (2)Power dissipation , T =25°CC Operating Junction and Storage Temperature -60 ±20 -17 -60 -55 ~ +150 Value V W A V = -60 VDS ( )R = 64mΩ Max( )DS on I = -17AD,pulse

Applications

  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 Package & Pin information Packing Qty. (1)Pulsed drain current , T =25 °CC A(1)Avalanche Current ID,pulse EAS (4)Single pulsed avalanche energy 32 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 3.9 °C/W RθJC RθJA Thermal Resistance from Junction to Ambient IAR TO-220F H17P6F P-Channel Power MOSFET D G SG D S

50 PCSTube

(1)Repetitive Avalanche Energy 3.1 mJ

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 Electrical Characteristics (T =25 unless otherwise specified)J °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage -60 Typ. Test Conditions V =0, I =-250μAGS D Max.Min. V -1.0 -3.0 V =V , I =-250μAGS DS D Drain-Source Leakage Current Gate-Source Leakage Current -1 μA V =0, V =±20VDS GSnA±100 120 Input Capacitance Output Capacitance Reverse Transfer Capacitance 1430 156 pF V =0GS V =-25VDS f=1.0MHz Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge nC V =-48VDS -10VV =GS I =-12AD Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =-12AGS S Max. V =0V GS I =-12ΑS di/dt=-100A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 75 Min. V RDS(on) Drain-Source On-State Resistance 64 mΩ V =-10V, I =-12AGS D IGSS Gate resistanceRG V =-60V, V =0DS GS 8.6 f =1 MHz, Open drainΩ Coss Crss Qg Qgs Qgd -1.3 trr Note: (1) Repetitive rating; pulse width limited by max. junction temperature. (2) Pd is based on max. junction temperature, using junction-case thermal resistance. (3) Calculated continuous current based on maximum allowable junction temperature. (4) V =-30V,V =-10 V, L=1 mH,R =25Ω, starting T =25 °CDD GS G j Forward Transconductancegfs 17 V =-10V, I =-8ADS DS td(on) tf Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =-30VDS -10VV =GS I =-12AD 3.3ΩR =G(ext) tr td(off)

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams Fig1. Typ. output characteristics ( )Drain-Source Voltage, -V VDS 0 2 3 4 6 ( )Drain-Source Current, -I AD T =25°CJ V =-4VGS V =-5VGS V =-6VGSV =-10VGS V =-7VGS Fig2. Typ. output characteristics ( )Drain-Source Voltage, -V VDS 0 2 3 4 6 ( )Drain-Source Current, -I AD T =150°CJ V =-4VGS V =-5VGS V =-6VGS V =-10VGS V =-7VGS ( )Drain-Source Voltage,-V VDS 5 10 15 20 25 110 210 410 ( )Capacitance pF Fig3. Typical Capacitance vs. Drain-to-Source Voltage V =0GS f =1MHz Coss Ciss Crss Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 40 4530 10 ( )Gate-Source Voltage, -V VGS V =-48VDS I =-12AD -25 Fig5. Threshold voltage 75 125 175 ( )Junction Temperature-T °CJ 15010050250-50 1.4 0.8 1.0 1.2 0.4 ( )Threshold voltage-V VGS(th) 0.6 I =250μAD Fig6. Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 ( )Drain-Source Continupus Current, -I AD

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 Fig9. Safe Operating Area ( )Drain-Source Voltage,-V VDS ( )Drain-Source Current,-I AD 1E2 1E1 1E0 1E-1 0.1 10 100 T =25°CC T =150°CJmax 0.1ms 1ms 10ms DC R LimitedDS(on) 100ms Rectangular Pulse Duration (sec) 1E-4 1E-3 1E-2 1E-1 1E01E-5 1E-3 1E-2 1E-1 Fig.10 Normalized Transient Thermal Impedance ( )Normalized Thermal Response ZthJC 1E1 1E0 0.02 0.05 0.5 0.2 0.1 Single Pulse 0.01 Duty=t /Tp PDM Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + Fig7. Avalanche Energy v.s. Junction Temperature 75 125 ( )Junction Temperature-T °CJ 1501005025 (mJ)Single Pulse Avalanche Energy-EAS I =-8AD Fig8. Typ. Drain-Source on State Resistance 20 40 ( )Drain Current,-I AD 503010 0 200 120 160 ( )R mΩSD(on) T =25°CJ V =-10VGS

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5

Package Information

TO-220F package outline dimension 0.413 (10.5) 0.374 (9.50) 0.650 (16.5) 0.571 (14.5) 0.150 (3.8) 0.118 (3.0) 0.157 (4.0) 0.098 (2.5) 0.575 (14.6) 0.492 (12.5) 0.100 (2.54) TYP-2 0.035 (0.9) 0.020 (0.5) 0.056 (1.42) 0.039 (1.00) 0.189 (4.8) 0.165 (4.2) 0.0315 (0.8) 0.0157 (0.4) 0.110 (2.80) 0.084 (2.14) 0.114 (2.9) 0.098 (2.5) 0.140 (3.55) 0.102 (2.60) Package Outline Dimensions in Inches (Millimeters)