H173N4HD HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H173N4HD 40V SGT Single N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- UPS
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H173N4HD TO-252 H173N4HD Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 40 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 173 AContinuous Drain Current TC=100℃ 109 IDM Pulsed Drain Current 590 PD Power Dissipation 110 W EAS Single Pulse Avalanche Engergy L = 0.1mH, RG = 25 Ω,TC=25℃ 180 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 1.14 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 46 ℃/ W VDSS RDS(ON)(Typ ) ID 40V 1.9mΩ 173A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 40 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=40V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=40V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2.0 3.4 4.0 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 1.9 2.3 mΩ VGS=10V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 4980 -- pF VGS=0V VDS=20V f=1MHz Coss Output Capacitance -- 905 -- Crss Reverse Transfer Capacitance -- 98 -- Rg Gate Resistance -- 1 -- Ω f=1MHz Qg Total Gate Charge -- 72 -- nC VDS=20V ID=20A VGS=10V Qgs Gate- to- Source Charge -- 20 -- Qgd Gate-to-Drain(" Miller") Charge -- 15 -- Switching Characteristics td(ON) Turn- on Delay Time -- 21 -- nS VDS=20V ID=20A VGS=10V RG=10Ω trise Rise Time -- 11 -- td(OFF) Turn- OFF Delay Time -- 29 -- tfall Fall Time -- 8 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=20A,VGS=0V trr Reverse Recovery Time -- 41 -- nS VR=20V,IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 41 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )