H16C05 MOSPEC | Alldatasheet
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. . se HIGH EFFICIENCY Dual High Efficiency Power Rectifiers RECTIFIERS ... Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have 50. a upke the following features: 7 TS * High Surge Capacity * Low Power Loss, High efficiency * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction * Low Forward Voltage , High Current Capability * High-Switching Speed 50 Nanosecond Recovery Time * Plastic Material used Carries Underwriters Laboratory MAXIMUM RATINGS TO-220AB Characteristic Peak Repetitive Reverse Voltage Vearm hi i" T T Working Peak Reverse Voltage Vewna 150 | 200 v vs 1° DC Blocking Voltage Vp ; Average Rectifier Forward Current Jeavy A ° Per Leg T.=125°C 8.0 | Per Total Device 16 Hope chen =425% ( Rate V, ,Square Wave,20kHz,T.=125°C ) 16 Non-Repetitive Peak Surge Current A ( Surge applied at rate load conditions 150 A 15.32 halfware, single phase,60Hz ) B 978 | 10.42 Temperature Range PT] eso | | p 13.08 v482 Temperature Range - 65 to + 150 ep | 328 | 48° F 2.42 2.66 G 1.12 1.36 ELECTRICAL CHARACTERISTICS H | o72 | 096 Pr | 4.22 4.98 Characteristic [ec 5 | 72 | 43 Maximum Instantaneous Forward Voltage V, Vv u $38 $38 Maximum Instantaneous Reverse Current uA pele ae cia (Rated DC Voltage, T, = 25 °C) 10 3 Suffix” c ( Rated DC Voltage, T, = 125 °C) 500 Lote Hocommen Anode (1, = 0.5A, lp =1.0, |, =0.25 A) 50 LORE E doubte Typical Junction Capacitance Cc, pF 3 Suffix" D" (Reverse Voltage of 4 volts & f=1 MHz) 120
FIG-1 TYPICAL FORWARD CHARACTERISTICS 2 FIG-3 FORWARD CURRENT DERATING CURVE Se er e | See j NG @ LLL PETES EE 5 ee SS a ee ee ee ee g Pea oe 3 a a a 22a 2 rf NI @ COO - t+++ 4 o_o ee
5 SS - I | [ | TN
r= a a a eS A 2 a Eo 30 15 100 125 150 g a a € -LVELLPELeLerere cree eran) yi rT} 18 1 12 4 18 FIG-4 TYPICAL JUNCTION CAPACITANCE = 500 Et FORWARD VOLTAGE (Volts.) Mme | pe ===. FIG-2 TYPICAL REVERSE CHARACTERISTICS a ose anes 1 a Sees nae roa FA Poet aes — £ i 5 TTT LTT) a oe a | Fe SSS SS SS " 510 0 & _ 8 th NA REVERSE VOLTAGE (Vos) 6 ee FIG-5 PEAK FORWARD SURGE CURRENT g | A a 150; — a es | NE TTT SS gow KITT
2 Se es | £ PT SNA
2 ol _l LE] [TT] 5 0 Pe a er a ee E Hemme go Ph PERCENT OF PEAK REVERSE VOL TAGE(%) a [| TP is gy A g I| TT TTT zg ° a 1 3 iO om | ___ NUMBER OF CYCLES AT soe son NI 10 NI a ray Test = \\ = howex ° ———— j Sate aaee : tH © Oscilloscope | +) won era 4.Rise Time = 7 ns max. Input impedance =1 M 0,22 pF 2. Rise Time= 10 ns max. Input impedance = 50.0. Set tme base for 20 nsitiv Fig-6 Reverse Recovery Time Characteristic and Test Circuit Diagram