H1601-1 ETC | Alldatasheet
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Technical content
SEMICONDUCTOR, INC ep eg nO OOS High Voltage, Fast Recovery Medium Current Rectifier H1601 Series eee eee eee ee ee Platinum Doped Uniform Chip-to-Chip Recovery High Voltage Medium Current Fast t, MAXIMUM RATINGS (At T, = 25°C unless otherwise noted) , Non-Repetitive Peak Repetitive Peak Average Forward RMS Forward Surge Current Forward Voltage Part No. Style Vanm her lr AMS lesw Ve PHeo1-1 | AT OKY OOM TAMA A pHi601-1.5 | A 1.5KV p 400mA | BMA A | HY601-2 | A 2.0KV | 250mA | OMA OA PHOS | AT OK TOMA OMA OA [| Hteor4 | CA OK TOMA TEMA A tO Pp HNeO1S TA SOKV OMA SMA A | His =| BT OKT 80MA | 0OmMA OA piers | BOT OKV ET 80mMA TOMA A ss = 10.0KV 100mA p SBmMA TSA Puteot-120 | BT OK 100mA MASA Pte. | 5OKV fT OmA | Om OA [Hisorre [to roma toma toa gov ELECTRICAL CHARACTERISTICS (At T, = 25°C unless otherwise noted) BOR Maximum DC Reverse current at rated Varw , Maximum DC Reverse Current at 80% rated Vin 100°C A ( G , la = 100mA, and Inn = — 25mA (Fig. 2) te 250 nsec Ambient Operating Temperature Storage Temperature Range | Tse S| 8S tO +150 EC DIMENSIONS IN INCHES 70 mun. | 032 DIA 160 DIA ‘ —i-- © 390 | 75m0. | oa2 DIA 160 DIA 0 =e QO _ ls |
032 DIA 25 DIA
a = -— ©) _ 1.0 The rectifier as packaged can be tested in aw (25°C, < 55% RH) at rated Vary. However, in a dusty or humid environment, the rectifier should be overmolded or operated