H15T60D HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H15T60D Trench Gate IGBTFea tures:
- 600V trench gate/field termination process
- Very low Vce(sat)
- Low switching loss
- Positive temperature coefficient in Vce(sat)
- Lead Free Applications:
- EV Charging
- Uninterruptible Power Supply (UPS)
- Inverters
- Load Switch
Ordering Information
Part Number Package Marking Packing Qty. H15T60D T0-252 H15T60D Tape&reel 2500 PCS Absolute Maximun Ratings(Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGES Gate- Emitter Voltage ±30 V IC Continuous DC collector current TC = 25 °C 30 AContinuous DC collector current TC = 100 °C 15 ICm Pulsed collector current TC = 25°C 60 A IF Diode Continuous Forward Current TC = 25 °C 15 ADiode Continuous Forward Current TC = 100 °C 7.5 IFm Diode Maximum Forward Current TC = 25°C 30 A PD Total Power Dissipation @ TC = 25°C 78 W Tstg Operating Junction and Storage Temperature Range -55 to150 °C TL Maximum Temperature for Soldering 260 °C VCES Vce(sat ) IF 600V 1.6V 15A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case for IGBT -- 1.3 ℃/ W RθJC Thermal Resistance Junction-Case for Diode -- 2.8 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 62.5 ℃/ W Electrical Characteristics of the IGBT ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions Static Characteristics V(BR)CES Collector-Emitter Breakdown Voltage 600 - -- V VGE=0V,ICE=250uA ICES Collector-Emitter Leakage Current - - 15 uA VGE =0V, VCE=600V IGES(F) Gate to Emitter Leakage current - - 200 nA VGE=+30V, VCE=0V IGES(R) Gate to Emitter Leakage current - - -200 nA VGE=-30V, VCE=0V VCE(sat) Collector-Emitter Saturation Voltage 1.0 1.6 2.0 V IC=15A,VGE=15V VGE(th) Gate Threshold Voltage 4.4 5.2 5.9 V IC=250uA,VCE=VGE Dynamic Characteristics Cies Input Capacitance - 1635 -- PF VCE=25V, VGE=0V, f=1MHz Coes Output Capacitance - 50 -- Cres Reverse Transfer Capacitance - 30 --
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Symbol Parameter Min. Typ. Max. Units Test Conditions Switching Characteristics td(ON) Turn-on Delay Time - 16 -- ns VCC=400V, IC=15A, VGE=15V, Rg=5Ω, Tj=25°C Inductive Load tr Rise Time - 12 -- td(OFF) Turn-Off Delay Time - 86 -- tf Fall Time - 12 -- Eon Turn-On Switching Loss - 0.25 -- mJEoff Turn-Off Switching Loss - 0.12 -- Ets Total- Switching Loss - 0.37 -- Qg Total Gate Charge - 63 -- uC IC =15 A, VGE =25 V, VCC =480 V Qge Gate- to- Emitter Charge - 15 -- QgC Gate-to-Collector Charge - 26 -- Electrical Characteristics of the DIODE ( TJ= 25℃unless otherwise specified) VF Diode Forward Voltage - 2.0 2.6 V IF=8A Trr Reverse Recovery time - 70 - nS IF=8A di/dt=100A/µsIrrm Reverse Recovery Current - 7.5 - A Qrr Reverse Recovery Charge - 175 - nC
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing TO-252 Unit: mm )