STH15NB50FI STMICROELECTRONICS | Alldatasheet
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Technical content
I ST] 7 SGS-THOMSON MICROELECTRONICS STH15NB50FI a N - CHANNEL ENHANCEMENT MODE MESH OVERLAY™ POWER MOSFET PRELIMINARY DATA [tyre [Voss Rosen [to | = TYPICAL Roston) = 0.33 Q = EXTREMELY HIGH dv/dt CAPABILITY = +30V GATE TO SOURCE VOLTAGE RATING = 100% AVALANCHE TESTED = REPETITIVE AVALANCHE DATA AT 100°C = VERY LOW INTRINSIC CAPACITANCES 2 3 = GATE CHARGE MINIMIZED 1
DESCRIPTION
Using the latest high voltage technology, ISOWATT218 SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest Rps(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics INTERNAL SCHEMATIC DIAGRAM 0(2) APPLICATIONS f = HIGH CURRENT, HIGH SPEED SWITCHING = SWITCH MODE POWER SUPPLIES (SMPS) tt) = DC-AC CONVERTERS FOR WELDING ° EQUIPMENT AND UNINTERRUPTIBLE [ POWER SUPPLIES AND MOTOR DRIVE 53) sco6140 ABSOLUTE MAXIMUM RATINGS [Symbor[ Parameter [Vata Unit | | Veor —[Drain- gat Votage Ros= 20K) TO Fp [Drain Current continuousatTo=25° | SCA [15 [Brain Curent (continuous) atTe= 100°C | SLC tou) [Orain Curent pues STS [Pur [Total Desipaton at Te=25%—SSCdSCCSSCiOSCSC*dC [Joeratng Factor |e [aug [Peak Diode Recovery woRagestpe | (Wi | a (9 Pulse width limited by safe operating area T) leo <15A, ai/dt= 200 Als, Voo = Viemoss, T)< Tomax January 1997 13
Rth-case |Thermal Resistance Junction-case Max 1.56 °C Rth-amb |Thermal Resistance Junction-ambient Max 30 oC/W Rine-sink |Thermal Resistance Case-sink Typ 04 CW Tr Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS [Symbor[ SS arameter ———SSSSC*dCSSCMax Vato Ui | Avalanche Current, Repetitive or Not-Repetitive 146 A (pulse width limited by T, max, 8 < 1%) Single Pulse Avalanche Energy mJ (starting T, = 25 °C, Ip = lan, Von = 50 V) Repetitive Avalanche Energy mJ (pulse width limited by T, max, 5 < 1%) Avalanche Current, Repetitive or Not-Repetitive 9.2 A (Te = 100 °C, pulse width limited by T, max, 5 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Visryoss |Drain-source Ip= 250A Vcs=0 Vv Breakdown Voltage Zero Gate Voltage |Vps = Max Rating 25 LA Drain Current (Ves = 0) |Vos = Max Rating x 08 To= 100°C 250 BA oss Gate-body Leakage | Vas = + 30 V +100 nA Current (Vps = 0) ON (*) Gate Threshold Voltage |Vos = Vas _Ip = 250 HA [3 [4f]s5 |v] Ros(on) |Static Drain-source On|Vas=10V ID=75A 0.33 | 0.36 Q Resistance Ves=10V In=7.5A_ Te = 100°C 072 | Q On State Drain Current |Vps > Ip(on) x RDs(on)max Ves= 10V DYNAMIC gts (*) |Forward Vos > Ip(on) X Ros(onymax Ip = 7.5A Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 2600 | 3400 pF Coss Output Capacitance 330 430 pF Crss Reverse Transfer 40 55 pF Capacitance 2g ss-tHoMson ‘TM iicnozecraomes
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON [Symbot [Parameter | Test Conditions [_min. | typ. | Max. | unit | Turn-on Time Vop=250V Ip=75A 24 34 Rise Time Re = 4.79 Ves = 10 V 14 20 (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope [Voo=400V Ip=15A 280 Alus Rea=47Q Ves = 10V (see test circuit, figure 5) Qg Total Gate Charge Von = 400V Ip=15A Ves=10V 60 nc Qgs Gate-Source Charge 15 nc Qga Gate-Drain Charge 27 nc SWITCHING OFF Symbol Test Conditions [_min. | typ. | Max. | unit | tyvor) | Off-voltage Rise Time |Vop=400V_ Ip=15A 15 20 tr Fall Time Re=4.7Q2 Ves=10V 25 33 te Cross-over Time (see test circuit, figure 5) 35 47 SOURCE DRAIN DIODE Iso Source-drain Current 14.6 A Ispm(*) |Source-drain Current 584 A (pulsed) Reverse Recovery |Iso=15A di/dt = 100 A/us 680 ns Time Vpp = 100V 1, =150°C Reverse Recovery |(see test circuit, figure 5) 9 uC Charge Reverse Recovery 26 A Current (Pulsed, Pulse duraion = 300ps, duty cycle 15% (*) Pulse width limited bysafe operating area Safe Operating Area Thermal Impedance Pe cs-tHOMSON a ‘YM iscaowscraomics