H14N6J HUIXIN | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 H14N6J 60V Single N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H14N6J SOP-8 H14N6J Tape&reel 4000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 60 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 14 AContinuous Drain Current TC=100℃ 9 IDM Pulsed Drain Current 56 PD Power Dissipation 3.2 W EAS Single Pulse Avalanche Engergy L = 0.5mH,LAS=18A, RG = 25 Ω,TC=25℃ 81 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-Ambient 40 -- ℃/ W VDSS RDS(ON)(Typ ) ID 60V 8mΩ 14A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=60V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 1.4 1.9 2.5 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance(Note*2) -- 8 9.5 mΩ VGS=10V,ID=13.5A -- 11 13.5 mΩ VGS=4.5V,ID=11.5A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1050 -- pF VGS=0V VDS=30V f=1MHz Coss Output Capacitance -- 420 Crss Reverse Transfer Capacitance -- 21 -- Rg Gate Resistance -- 1.6 -- Ω f=1MHz Qg Total Gate Charge -- 18 nC VDS=30V ID=13A VGS=10V Qgs Gate- to- Source Charge -- 6.5 -- Qgd Gate-to-Drain(" Miller") Charge -- 3.8 -- Switching Characteristics td(ON) Turn- on Delay Time -- 7 -- nS VDS=30V ID=13A RG=3Ω VGS=10V trise Rise Time -- 52 -- td(OFF) Turn- OFF Delay Time -- 18 -- tfall Fall Time -- 8 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=1A,VGS=0V trr Reverse Recovery Time -- 30 -- nS VR=30V,IF=6A di/dt=100A/µsQrr Reverse Recovery Charge -- 18 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5 Package outline drawing (SOP-8 Unit: mm )