H140N15HDC HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H140N15HDC 150V SGT N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Managment
- Load Switch
Ordering Information
Part Number Package Marking Packing Qty. H140N15HDC TO-263 H140N15HDC Tape&reel 800 PCS Absolute Maximun Ratings(Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 150 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 140 AContinuous Drain Current TC=100℃ 99 IDM Pulsed Drain Current 500 PD Power Dissipation 300 W EAS Single Pulse Avalanche Engergy L = 0.4mH, RG = 25 Ω,TC=25℃ 405 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 0.5 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 60 ℃/ W VDSS RDS(ON)(Typ ) ID 150V 5.9mΩ 140A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 150 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=150V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=150V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 5.9 7.0 mΩ VGS=10V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 5360 -- pF VGS=0V VDS=75V f=1MHz Coss Output Capacitance -- 385 -- Crss Reverse Transfer Capacitance -- 11 -- Rg Gate Resistance -- 3 -- Ω f=1MHz Qg Total Gate Charge -- 62 -- nC VDS=75 ID=20A VGS=10V Qgs Gate- to- Source Charge -- 20 -- Qgd Gate-to-Drain(" Miller") Charge -- 9 -- Switching Characteristics td(ON) Turn- on Delay Time -- 23 -- nS VDS=75V ID=20A RG=10Ω VGS=10V trise Rise Time -- 22 -- td(OFF) Turn- OFF Delay Time -- 32 -- tfall Fall Time -- 15 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.9 1.2 V IF=20A,VGS=0V trr Reverse Recovery Time -- 65 -- nS VR=75V,IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 150 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing TO-263 Unit: mm )