H13N50W HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H13N50W 500V N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Switch Mode Power Supply(SMPS)
  • Adapter & Charger
  • AC-DC Switching Power Supply

Ordering Information

Part Number Package Marking Packing Qty. H13N50W TO-247 H13N50W Tube 30 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 500 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 13 AContinuous Drain Current TC=100℃ 8 IDM Pulsed Drain Current 52 PD Power Dissipation 179 W EAS Single Pulse Avalanche Engergy L = 10mH, RG = 25 Ω,TC=25℃ 414 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 0.7 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 60 ℃/ W VDSS RDS(ON)(Typ ) ID 500V 0.48Ω 13A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 500 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=500V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=500V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=30V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-30V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 0.48 0.62 Ω VGS=10V,ID=6.5A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1645 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 157 -- Crss Reverse Transfer Capacitance -- 18 -- Qg Total Gate Charge -- 33 -- nC VDS=250V ID=13A VGS=10V Qgs Gate- to- Source Charge -- 9.7 -- Qgd Gate-to-Drain(" Miller") Charge -- 11 -- Switching Characteristics td(ON) Turn- on Delay Time -- 26 -- nS VDS=253V ID=13A VGS=10V trise Rise Time -- 40 -- td(OFF) Turn- OFF Delay Time -- 92 -- tfall Fall Time -- 42 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=13A,VGS=0V trr Reverse Recovery Time -- 385 -- nS VGS=0V,IF=13A di/dt=100A/µsQrr Reverse Recovery Charge -- 4.2 -- uC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 0.5%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-247 Unit: mm ) Symbol unit(mm) MIN MAX A 15.7 16.13 B 20.80 21.10 C 4.83 5.21 D 1.50 2.49 E 1.10 1.33 F 0.50 0.70 G1 2.87 3.22 G2 1.91 2.39 H 4.00 4.40 I 2.29 2.55 K 5.39 6.20 L 19.80 20.32 M 4.23 5.49 N 5.28 5.59 3.40 3.65