H12P3J HUIXIN | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 H12P3J 30V Trench Single P-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H12P3J SOP-8 H12P3J Tape&reel 4000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Value Units VDS Drain-to-Source Voltage -30 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ -12 AContinuous Drain Current TC=70℃ -10 IDM Pulsed Drain Current -44 PD Power Dissipation 3.1 W Maximum Temperature for Soldering 260 ℃ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Max Unit RθJA Thermal Resistance Junction-Ambient 75 ℃/ W RθJC Thermal Resistance Junction-Case 24 ℃/ W VDSS RDS(ON)(Typ ) ID -30V 8mΩ -12A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage -30 -- -- V VGS=0V,ID=-250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- -1 µA VDS=-30V,VGS=0V IGSS Gate to Source Forward Leakage -- -- -100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- 100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage -1.0 -1.5 -2.0 V VGS=VDS,ID=-250µA RDS(on) Static Drain- to- Source On- Resistance -- 8 13 mΩ VGS=-10V,ID=-12A -- 15.5 19 mΩ VGS=-4.5V,ID=-7A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1781 -- pF VGS=0V VDS=-15V f=1MHz Coss Output Capacitance -- 237 Crss Reverse Transfer Capacitance -- 201 -- Rg Gate Resistance -- 2.4 -- Ω f=1MHz Qg Total Gate Charge -- 46 nC VDS=-10V ID=-15A VGS=-10V Qgs Gate- to- Source Charge -- 1.0 -- Qgd Gate-to-Drain(" Miller") Charge -- 1.4 -- Switching Characteristics td(ON) Turn- on Delay Time -- 8 -- nS VDS=-15V RL=-1Ω RG=3Ω VGS=-10V trise Rise Time -- 27 -- td(OFF) Turn- OFF Delay Time -- 68 -- tfall Fall Time -- 39 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.7 -1.0 V IF=-4.1A,VGS=0V trr Reverse Recovery Time -- 13.5 -- nS IF=-4A di/dt=100A/µsQrr Reverse Recovery Charge -- 3.7 -- nC
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5 Package outline drawing (SOP-8 Unit: mm )