H12NA60

STH12NA60 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.44Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE GHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low R DS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STH12NA60 STH12NA60FI STW12NA60 600 V 600 V 600 V <0 . 6Ω <0 . 6Ω <0 . 6Ω 12 A 12 A November 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STH/STW12NA60 STH12NA60FI V DS Drain-source Voltage (VGS =0 ) 6 0 0 V V DG R Drain- gate Voltage (RGS =2 0k Ω )6 0 0 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC1 27 A ID Drain Current (continuous) at Tc =1 0 0oC7 . 6 4 . 4 A IDM (•) Drain Current (pulsed) 48 48 A P tot Total Dissipation at Tc =2 5 oC 190 80 W Derating Factor 1.52 0.64 W/ oC V ISO Insulation Withstand Voltage (DC)  4000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area TO-218 ISOWATT218 TO-247

R thj-case Thermal Resistance Junction-case Max 0.66 1.56 oC/W R thj-amb R thc- sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 12 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 700 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 28 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ <1 % ) 7.6 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =2 5 0µAV GS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC 250 µA µA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =6A 0 . 4 4 0 . 6 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 12 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =6A 8 1 2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 2500 310 3250 410 110 pF pF pF STH12NA60/FI - STW12NA60

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0 0V I D =6A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns (di/dt)on Turn-on Current Slope V DD =4 8 0V I D =1 2A R G =4 7 Ω VGS =1 0V (see test circuit, figure 5)

190 A/ µs

V DD = 480 V I D =1 2A V GS =1 0V 1 1 0 150 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 8 0V I D =1 2A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =1 2A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/ µs V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 670 12.7 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 STH12NA60/FI - STW12NA60

Thermal Impedeance For TO-218 and TO-247 Derating Curve For TO-218 and TO-247 Output Characteristics Thermal Impedance For ISOWATT218 Derating Curve For ISOWATT218 Transfer Characteristics STH12NA60/FI - STW12NA60

Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temperature STH12NA60/FI - STW12NA60

Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics STH12NA60/FI - STW12NA60

Fig. 2:Unclamped Inductive Waveforms Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 4:Gate Charge Test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 1:Unclamped Inductive Load Test Circuits STH12NA60/FI - STW12NA60

DIM. mm inch A 4.7 5.3 0.185 0.208 A1 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 0.613 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 ØP 3.5 3.71 0.137 0.146 D Q ø A C E e bb2 L TO-247 MECHANICAL DATA STH12NA60/FI - STW12NA60

DIM. mm inch A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220 R – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 R A C D E H F G Ø 123 TO-218 (SOT-93) MECHANICAL DATA P025A STH12NA60/FI - STW12NA60

DIM. mm inch A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 A C D E H G M F 123 U L4 D1 N ISOWATT218 MECHANICAL DATA P025C STH12NA60/FI - STW12NA60

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