H12N60F HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 7 H12N60F 600V N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Switch Mode Power Supply(SMPS)
  • Adapter & Charger
  • AC-DC Switching Power Supply

Ordering Information

Part Number Package Marking Packing Qty. H12N60F H12N60TO-220F F Tube 50 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 600 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 12 AContinuous Drain Current TC=100℃ 7.6 IDM Pulsed Drain Current 40 PD Power Dissipation 50 W EAS Single Pulse Avalanche Engergy L = 10mH, RG = 25 Ω,TC=25℃ 720 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 2.5 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 62.5 -- ℃/ W VDSS RDS(ON)(Typ ) ID 600V 0.4Ω 12A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 7 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 600 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=600V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=480V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=30V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-30V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 0.4 0.5 Ω VGS=10V,ID=6A Dynamic Electrical Characteristics Ciss Input Capacitance -- 2640 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 180 -- Crss Reverse Transfer Capacitance -- 4.2 -- Qg Total Gate Charge -- 48 -- nC VDS=520V ID=12A VGS=10V Qgs Gate- to- Source Charge -- 11 -- Qgd Gate-to-Drain(" Miller") Charge -- 18 -- Switching Characteristics td(ON) Turn- on Delay Time -- 30 -- nS VDS=300V ID=12A VGS=10V trise Rise Time -- 28 -- td(OFF) Turn- OFF Delay Time -- 80 -- tfall Fall Time -- 33 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.0 V IF=12A,VGS=0V trr Reverse Recovery Time -- 500 -- nS VGS=0V,IF=12A di/dt=100A/µsQrr Reverse Recovery Charge -- 3.9 -- uC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 7 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 7

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 7 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 7 Package outline drawing (TO-220F Unit: mm ) Symbol unit(mm) MIN MAX A 9.7 10.4 B 15.5 16.10 B1 8.95 9.40 C 4.40 4.80 C1 2.15 2.55 D 2.50 2.90 E 0.70 0.90 F 0.40 0.60 G 1.12 1.42 H 3.40 4.00 L 12.6 13.6 N 2.34 2.74 Q 3.15 3.55 3.00 3.30