H11N70D HUIXIN | Alldatasheet

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Technical content

Features

  • New technologyfor highvoltage device
  • Lowon-resistanceand low conductionlosses
  • Smallpackage
  • UltraLow GateCharge cause lower drivingrequirements
  • 100% AvalancheTested AbsoluteMaximumRatings(TC=25℃) Parameter Symbol Value Unit Drain-SourceVoltage(VGS=0V） VDS 700 V Gate-SourceVoltage(VDS=0V) AC(f>1Hz) VGS ±30 V ContinuousDrainCurrent atTC =25°C ID(DC) 11 ContinuousDrainCurrent atTC=100°C ID(DC) 7 A Pulseddraincurrent(Note1) IDM (pluse) 46 A MaximumPower Dissipation(TC =25℃) Derateabove25°C PD 101 0.97 W W/°C Singlepulseavalancheenergy (Note2) EAS 144 mJ Avalanchecurrent(Note1) IAR 6 A Repetitive Avalanche energy ,tAR limited by Tjmax (Note1) EAR 0.5 mJ Schematic diagram DrainSourcevoltageslope,VDS ≤480V, dv/dt 50 V/ns Reversediodedv/dt，VDS ≤480V,ISD<ID dv/dt 15 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55...+150 °C 6GMK1UL5 A Product Summary VDS 700V RDS(on)_max 380mΩ ID 11A View and Internal Schematic Diagram TO-252 Package Marking and Ordering Information TO-252 Marking2500pcs Part Number Package Packing Qty H11N70D H11N70D Tape & Reel

OutputCapacitance Coss 54 pF ReverseTransferCapacitance Crss 1.8 pF TotalGateCharge Qg VDS=480V,ID=11.5A, VGS=10V 19 nC Gate-SourceCharge Qgs 6 nC Gate-DrainCharge Qgd 6.5 nC Switchingtimes Turn-onDelayTime td(on) VDD=420V,ID=5.5A, RG=3Ω,VGS=10V 12 nS Turn-onRiseTime tr 9 nS Turn-OffDelayTime td(off) 61 Turn-OffFallTime tf 11 Source-DrainDiodeCharacteristics Source-draincurrent(BodyDiode) ISD TC=25°C 11.5 A PulsedSource-draincurrent(BodyDiode) ISDM 46 A Forwardonvoltage VSD Tj=25°C,ISD=11.5A,VGS=0V 0.9 ReverseRecoveryTime trr Tj=25°C,IF=5.8A, di/dt=100A/μs 220 nS ReverseRecoveryCharge Qrr 2.2 uC PeakReverseRecoveryCurrent Irrm 19 A Notes:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 2.Tj=25℃,VDD=50V,VG=10V,RG=25Ω 6GMK2UL5 1 μAThermal Characteristic Parameter Symbol Value Unit ThermalResistance，Junction-to-Case（Maximum） RthJC 1.24 °C /W ThermalResistance，Junction-to-Ambient （Maximum） RthJA 62 °C /W ElectricalCharacteristics(TA=25 ℃unlessotherwisenoted) Parameter Symbol Condition Min Typ Max Unit On/offstates Drain-SourceBreakdown Voltage BV DSS VGS=0VID=250μA 700 V Zero GateVoltage Drain Current(Tc=25℃) I DSS VDS=700V,VGS=0V Zero Gate Voltage Drain Current(Tc=125℃) I DSS VDS=700V,VGS=0V 100 μA Gate-Body Leakage Current I GSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage V GS(th) VDS=VGS,ID Drain-SourceOn-State Resistance R DS(ON) VGS=10V, ID=6A 330 380 mΩ Dynamic Characteristics InputCapacitance C lss VDS=50V,VGS=0V, F=1.0MHz=250μA 2 3 4 V nS nS V

TypicalCharacteristicsCurves Figure1.Safeoperating area Figure2. TransientThermalImpedance Figure3.Source-DrainDiodeForwardVoltage Figure4. Outputcharacteristics Figure5.Transfercharacteristics Figure6.Staticdrain-sourceonresistance 6GMK3UL5

Figure7.RDS(ON) vsJunction Temperature Figure8. BVDSS vsJunctionTemperature Figure9.MaximumID vsJunctionTemperature Figure10.Gatechargewaveforms Figure11.Capacitance 6GMK4UL5

A 6.50 6.70 A1 5.16 5.46 B 9.77 10.17 B1 6.00 6.20 B2 2.60 3.00 B3 0.70 0.90 C 0.45 0.61 D 2.20 2.40 E 2.186 2.386 F1 0.67 0.87 F2 0.76 0.96 H 0.00 0.30 h 0.00 0.127 L 6.50 6.70 1.10 1.30 Dimensions in Millimeters MIN MAX 6GMK5UL5 TO-252 Marking Information NOTE: LOGO - HX H11N70D- Part number coder Y - Year code W - Week code L&T - Assembly lot code