H11G1 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Parameter Symbol Value Units TOTAL DEVICE TSTG -55 to +150 °CStorage Temperature Operating Temperature T OPR -55 to +100 °C Lead Solder Temperature T SOL 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C PD 260 mW Derate above 25°C 3.5 mW/°C Input-Output Isolation Voltage V ISO 5300 Vac(rms) EMITTER IF 60 mAForward Input Current Reverse Input Voltage V R 6.0 V Forward Current - Peak (1µs pulse, 300pps) I F(pk) 3.0 A LED Power Dissipation @ TA = 25°C PD 100 mW Derate above 25°C 1.8 mW/°C DETECTOR Collector-Emitter Voltage H11G1 V CEO 100 V H11G2 80 H11G3 55 Detector Power Dissipation @ TA = 25°C PD 200 mW Derate above 25°C 2.67 mW/°C
FEATURES
High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 High sensitivity to low input current Minimum 500 percent CTR at I F = 1 mA Low leakage current at elevated temperature (maximum 100 µA at 80°C) Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. 7/21/00 200045A EMITTER COLLECTOR ANODE CATHODE
6 BASE
PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3
APPLICATIONS
CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer NOTE All dimensions are in inches (millimeters)
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) 7/21/00 200045A Characteristic Test Conditions Symbol Device Min Typ Max Unit EMITTER (IF = 10 mA) V F ALL 1.3 1.50 VForward Voltage Forward Voltage Temp. VF ALL -1.8 mV/ °CCoefficient TA Reverse Breakdown Voltage (I R = 10 µA) BV R ALL 3.0 25 V Junction Capacitance (VF = 0 V, f = 1 MHz) CJ ALL 50 pF (VF = 1 V, f = 1 MHz) ALL 65 pF Reverse Leakage Current (V R = 3.0 V) I R ALL 0.001 10 µA DETECTOR H11G1 100 Breakdown Voltage (I C = 1.0 mA, IF = 0) BV CEO H11G2 80 Collector to Emitter H11G3 55 H11G1 100 V Collector to Base (I C = 100 µA) BVCBO H11G2 80 H11G3 55 Emitter to Base BV EBO ALL 7 10 (VCE = 80 V, IF = 0) H11G1 Leakage Current (VCE = 60 V, IF = 0) H11G2 100 nA Collector to Emitter (VCE = 30 V, IF = 0) I CEO H11G3 (VCE = 80 V, IF = 0, TA = 80°C) H11G1 100 µA(VCE = 60 V, IF = 0, TA = 80°C) H11G2 INDIVIDUAL COMPONENT CHARACTERISTICS DC Characteristic Test Conditions Symbol Device Min Typ Max Unit EMITTER Current Transfer Ratio (IF = 10 mA, VCE = 1 V) H11G1/2 100 (1000) Collector to Emitter CTR mA (%) (IF = 1 mA, VCE = 5 V) H11G1/2 5 (500) H11G3 2 (200) (IF = 16 mA, IC = 50 mA) H11G1/2 0.85 1.0 Saturation Voltage (I F = 1 mA, IC = 1 mA) V CE (SAT) H11G1/2 0.75 1.0 V (IF = 20 mA, IC = 50 mA) H11G3 0.85 1.2 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ Max Unit SWITCHING TIMES (RL = 100 1, IF = 10 mA) t on ALL 5Turn-on Time µs Turn-off Time (V CE = 5 V) Pulse Width 6300 µs, f 630 Hz) t off ALL 100 TRANSFER CHARACTERISTICS HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 All typical values at T A = 25°C
Fig. 1 Output Current vs. Input Current IF - LED INPUT CURRENT(mA) 0.1 1 10 I C - NORMALIZED OUTPUT CURRENT 0.001 0.01 0.1 Normalized to: V CE = 5 V IF = 1 mA I C - NORMALIZED OUTPUT CURRENT Fig. 2 Normalized Output Current vs. Temperature TA - AMBIENT TEMPERATURE (˚C) -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 100 IF = 50 mA IF = 5 mA IF = 1 mA IF = 0.5 mA I C - NORMALIZED OUTPUT CURRENT VCE - COLLECTOR - EMITTER VOLTAGE (V) 11 0 0.01 0.1 100 IF = 50 mA IF = 10 mA IF = 2 mA IF = 1 mA IF = 0.5 mA Normalized to: V CE = 5 V IF = 1 mA TA = 25˚C Normalized to: V CE = 5 V IF = 1 mA TA = 25˚C Fig. 3 Output Current vs. Collector - Emitter Voltage I CEO - D ARK CURRENT (nA) TA - AMBIENT TEMPERATURE (˚C) 0 1 02 03 04 05 06 07 08 09 0 1 0 0 0.01 0.1 100 1000 Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature VCE = 30V VCE = 10V VCE = 80V Fig. 5 Input Current vs. Total Switching Speed (Typical Values) ton + toff - TOTAL SWITCHING SPEED (NORMALIZED) 0.1 1 10 IF - FOR W ARD CURRENT (mA) 0.1 Normalized to: V CC = 5 V IF = 10 mA RL = 100 Ω RL = 100 Ω RL = 1k ΩRL = 10 Ω 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3
Lead Coplanarity : 0.004 (0.10) MAX 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) TYP 0.405 (10.30) MAX 0.315 (8.00) MIN 0.016 (0.40) MIN PIN 1 ID. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) TYP 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.165 (4.18) 0.020 (0.51) MIN 0.100 (2.54) TYP 0.020 (0.51) MIN 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) PIN 1 ID. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.135 (3.43) 0.300 (7.62) TYP0° to 15° 0.154 (3.90) 0.100 (2.54) SEAT ING PLAN E 0.016 (0.40) 0.008 (0.20) 321 456 SEATING PL ANE 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) MIN 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) TYP 0.016 (0.41) 0.100 (2.54) TYP
3 PIN 1
ID. 456 NOTE All dimensions are in inches (millimeters) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) Package Dimensions (Surface Mount)Package Dimensions (Through Hole) Package Dimensions (0.4”Lead Spacing) Recommended Pad Layout for Surface Mount Leadform HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 7/21/00 200045A
S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4” Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4” Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel Option Order Entry Identifier Description 4.0 ± 0.1 Ø1.55 ± 0.05 User Direction of Feed 4.0 ± 0.1 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 13.2 ± 0.2 4.85 ± 0.20 0.1 MAX 10.30 ± 0.20 9.55 ± 0.20 Ø1.6 ± 0.1 QT Carrier Tape Specifications (“D” Taping Orientation)
ORDERING INFORMATION
All dimensions are in millimeters HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 7/21/00 200045A
Reflow Profile (Black Package, No Suffix) H11G1 V XX YY K 43 5 Definitions
1 Fairchild logo
2 Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table) 4 Two digit year code, e.g., ‘03’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
- Peak reflow temperature: 225° C (package surface temperature)
- Time of temperature higher than 183° C for 60–150 seconds
- One time soldering reflow is recommended 215°C, 10–30 s
225 C peak
Time (Minute) 300 250 200 150 100 T emperature (°C) Time above 183° C, 60–150 sec Ramp up = 3 C/sec
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I13 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™Across the board. Around the world.™ The Power Franchise Programmable Active Droop™