H11G2M

H11G1M FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

– Minimum 100V for H11G1M – Minimum 80V for H11G2M – Minimum 55V for H11G3M High sensitivity to low input current (Min. 500% CTR at I F = 1mA) Low leakage current at elevated temperature (Max. 100µA at 80°C) Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications

The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte- gral base-emitter resistor to optimize elevated tempera- ture characteristics. Schematic EMITTER COLLECTOR ANODE CATHODE

6 BASE

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE T STG Storage Temperature -55 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Lead Solder Temperature (Wave Solder) 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C Derate Above 25°C 260 mW 3.5 mW/°C EMITTER I F Forward Input Current 60 mA V R Reverse Input Voltage 6.0 V I F (pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A P D LED Power Dissipation @ T A = 25°C Derate Above 25°C 100 mW 1.8 mW/°C DETECTOR V CEO Collector-Emitter Voltage V H11G1M 100 H11G2M 80 H11G3M 55 P D LED Power Dissipation @ T A = 25°C Derate Above 25°C 200 mW 2.67 mW/°C

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 3

Electrical Characteristics

A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics Isolation Characteristics *All Typical values at T A = 25°C Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit EMITTER V F Forward Voltage I F = 10mA All 1.3 1.50 V V F T A Forward Voltage Temp. Coefficient All -1.8 mV/°C BV R Reverse Breakdown Voltage I R = 10µA All 3.0 25 V C J Junction Capacitance V F = 0V, f = 1MHz All 50 pF V F = 1V, f = 1MHz 65 I R Reverse Leakage Current V R = 3.0V All 0.001 10 µA DETECTOR BV CEO Breakdown Voltage Collector to Emitter I C = 1.0mA, I F = 0 H11G1M 100 V H11G2M 80 H11G3M 55 BV CBO Collector to Base I C = 100µA H11G1M 100 V H11G2M 80 H11G3M 55 BV EBO Emitter to Base All 7 10 V I CEO Leakage Current Collector to Emitter V CE = 80V, I F = 0 H11G1M 100 nA V CE = 60V, I F = 0 H11G2M V CE = 30V, I F = 0 H11G3M V CE = 80V, I F = 0, T A = 80°C H11G1M 100 µA V CE = 60V, I F = 0, T A = 80°C H11G2M Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units EMITTER CTR Current Transfer Ratio, Collector to Emitter I F = 10mA, V CE = 1V H11G1M/2M 100 (1000) mA (%) I F = 1mA, V CE = 5V H11G1M/2M 5 (500) H11G3M 2 (200) V CE(SAT) Saturation Voltage I F = 16mA, I C = 50mA H11G1M/2M 0.85 1.0 V I F = 1mA, I C = 1mA H11G1M/2M 0.75 1.0 I F = 20mA, I C = 50mA H11G3M 0.85 1.2 SWITCHING TIMES t ON Turn-on Time R L = 100 Ω , I F = 10mA, V CE = 5V, f 30Hz, Pulse Width 300µs All 5 µs t OFF Turn-off Time All 100 µs Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units V ISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V AC PEAK R ISO Isolation Resistance V I-O = 500 VDC All 10 Ω C ISO Isolation Capacitance f = 1MHz All 0.2 pF

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 4 Typical Performance Curves Fig. 1 Output Current vs. Input Current IF - LED INPUT CURRENT(mA) 0.1 1 10 I C - NORMALIZED OUTPUT CURRENT 0.001 0.01 0.1 Normalized to: VCE = 5V IF = 1mA I C - NORMALIZED OUTPUT CURRENT Fig. 2 Normalized Output Current vs. Temperature TA - AMBIENT TEMPERATURE (˚C) -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 100 IF = 50mA IF = 5mA IF = 1mA IF = 0.5mA I C - NORMALIZED OUTPUT CURRENT VCE - COLLECTOR - EMITTER VOLTAGE (V) 11 0 0.01 0.1 100 IF = 50mA IF = 10mA IF = 2mA IF = 1mA IF = 0.5mA Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C Normalized to: V CE = 5V IF = 1mA TA = 25˚C Fig. 3 Output Current vs. Collector - Emitter Voltage I CEO - DARK CURRENT (nA) TA - AMBIENT TEMPERATURE (˚C) 01 0 2 0 3 0 4 05 06 07 08 09 0 1 0 0 0.01 0.1 100 1000 Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature VCE = 30V VCE = 10V VCE = 80V Fig. 5 Input Current vs. Total Switching Speed (Typical Values) ton + toff - TOTAL SWITCHING SPEED (NORMALIZED) 0.1 1 10 IF - FORWARD CURRENT (mA) 0.1 Normalized to: VCC = 5 V IF = 10 mA RL = 100 Ω RL = 100Ω RL = 1kΩRL = 10Ω

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 5 Package Dimensions Through Hole Surface Mount 0.4" Lead Spacing Recommended Pad Layout for Surface Mount Leadform Note: All dimensions are in inches (millimeters). 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.305 (7.75) 0.425 (10.79)

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 6

Ordering Information

Order Entry Identifier (Example) Description No option H11G1M Standard Through Hole Device S H11G1SM Surface Mount Lead Bend SR2 H11G1SR2M Surface Mount; Tape and Reel T H11G1TM 0.4" Lead Spacing V H11G1VM VDE 0884 TV H11G1TVM VDE 0884, 0.4" Lead Spacing SV H11G1SVM VDE 0884, Surface Mount SR2V H11G1SR2VM VDE 0884, Surface Mount, Tape and Reel H11G1 V X YY Q 43 5 Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 7 Carrier Tape Specifications Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11GXM Rev. 1.0.0 8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E CMOS™ EcoSPARK EnSigna™ FACT Quiet Series™ FACT FAST FASTr™ FPS™ FRFET GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR PACMAN™ PDP-SPM™ POP™ Power220 Power247 PowerEdge™ PowerSaver™ Power-SPM™ PowerTrench Programmable Active Droop™ QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™ -3 SuperSOT™ -6 SuperSOT™ -8 SyncFET™ TCM™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production First Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26