H11G1M ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • High BVCEO: ♦ 100 V Minimum for H11G1M ♦ 80 V Minimum for H11G2M
  • High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
  • Low Leakage Current at Elevated Temperature (Maximum 100 /C0109A at 80°C)
  • Safety and Regulatory Approvals: ♦ UL1577, 4,170 V ACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation V oltage Application
  • CMOS Logic Interface
  • Telephone Ring Detector
  • Low Input TTL Interface
  • Power Supply Isolation
  • Replace Pulse Transformer www.onsemi.com MARKING DIAGRAM SCHEMATIC H11G1 = Specific Device Code V = DIN EN/IEC60747 −5−5 Option (only appears on component ordered with this option) X = One −Digit Year Code YY = Digit Work Week Q = Assembly Package Code See detailed ordering and shipping information on page 6 of this data sheet.

ORDERING INFORMATION

PDIP6 8.51x6.35, 2.54P CASE 646BY PDIP6 8.51x6.35, 2.54P CASE 646BX PDIP6 8.51x6.35, 2.54P CASE 646BZ H11G1 VXYYQ ON

1 BASE

H11G1M, H11G2M www.onsemi.com SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 VRMS I–IV <300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC

1360 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC

1594 Vpeak

VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >109 /C0087 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Max Unit TOTAL DEVICE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +100 °C TJ Junction Temperature −40 to +125 °C TSOL Lead Solder Temperature 260 for 10 seconds °C PD Total Device Power Dissipation @ TA = 25°C 290 mW Derate Above 25°C 3.5 mW/°C EMITTER IF DC / Average Forward Input Current 60 mA VR Reverse Input Voltage 6.0 V IF(pk) Forward Current – Peak (1 /C0109s pulse, 300 pps) 3.0 A PD LED Power Dissipation @ TA = 25°C 90 mW Derate Above 25°C 1.8 mW/°C DETECTOR VCEO Collector Emitter Voltage H11G1M 100 V H11G2M 80 V PD Photodetector Power Dissipation @ TA = 25°C 200 mW Derate Above 25°C 2.67 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

H11G1M, H11G2M www.onsemi.com ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit EMITTER VF Forward Voltage IF = 10 mA − 1.3 1.5 V /C0068VF//C0068TA Forward Voltage Temperature Coefficient − −1.8 − mV/°C BVR Reverse Breakdown Voltage IR = 10 /C0109A 3.0 25 − V CJ Junction Capacitance VF = 0 V, f = 1 MHz − 50 − pF VF = 1 V, f = 1 MHz − 65 − pF IR Reverse Leakage Current VR = 3.0 V − 0.001 10 /C0109A DETECTOR BVCEO Breakdown Voltage Collector to Emitter H11G1M IC = 1.0 mA, IF = 0 100 − − V H11G2M 80 − − V BVCBO Collector to Base H11G1M IC = 100 /C0109A 100 − − V H11G2M 80 − − V BVEBO Emitter Base 7 10 − V ICEO Leakage Current Collector to Emitter H11G1M VCE = 80 V, IF = 0 − − 100 nA H11G2M VCE = 60 V, IF = 0 − − 100 nA H11G1M VCE = 80 V, IF = 0, TA = 80°C − − 100 /C0109A H11G2M VCE = 60 V, IF = 0, TA = 80°C − − 100 /C0109A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit EMITTER CTR Current Transfer Ratio, Collector to Emitter IF = 10 mA, VCE = 1 V 100 (1000) − − mA (%) IF = 1 mA, VCE = 5 V 5 (500) − − mA (%) VCE (SAT) Saturation Voltage IF = 16 mA, IC = 50 mA, − 0.85 1.0 V IF = 1 mA, IC = 1 mA, − 0.75 1.0 V SWITCHING TIMES tON Turn on Time RL = 100 /C0087, IF = 10 mA, VCE = 5 V, f ≤ 30 Hz, Pulse Width ≤ 300 /C0109s − 5 − /C0109s tOFF Turn off Time − 100 − /C0109s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz − 0.2 − pF RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C 1011 − − /C0087 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 6. Reflow Profile Ramp−up Rate (tL to tP ) 3°C/second max. Ramp−down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max.

H11G1M, H11G2M www.onsemi.com Part Number Package Shipping† H11G1M DIP 6−Pin 50 Units / Tube H11G1SM SMT 6−Pin (Lead Bend) 50 Units / Tube H11G1SR2M SMT 6−Pin (Lead Bend) 1000 / Tape & Reel H11G1VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube H11G1SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option

50 Units / Tube

H11G1SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 / Tape & Reel H11G1TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13449GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13450GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51x6.35, 2.54P © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13451GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative