H11F1TVM

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Document overview

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Technical content

Features

As a remote variable resistor: 100 Ω to 300M Ω 15pF shunt capacitance 100G Ω I/O isolation resistance As an analog switch: Extremely low offset voltage 60 V pk-pk signal capability No charge injection or latch-up UL recognized (File #E90700)

Applications

As a remote variable resistor: Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch: Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion General Description The H11FXM series consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electri- cally isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages. Schematic Package Outlines OUTPUT TERM. OUTPUT TERM. ANODE CATHODE

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 2 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Absolute Maximum Ratings A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units TOTAL DEVICE T STG Storage Temperature All -40 to +150 T OPR Operating Temperature All -40 to +100 T SOL Lead Solder Temperature All 260 for 10 sec EMITTER I F Continuous Forward Current All 60 mA V R Reverse Voltage All 5 V I F(pk) Forward Current – Peak (10µs pulse, 1% duty cycle) All 1 A P D LED Power Dissipation 25°C Ambient All 100 mW Derate Linearly from 25°C 1.33 mW/°C DETECTOR P D Detector Power Dissipation @ 25°C All 300 mW Derate linearly from 25°C 4.0 mW/°C BV 4-6 Breakdown Voltage (either polarity) H11F1M, H11F2M ±30 V H11F3M ±15 V I 4-6 Continuous Detector Current (either polarity) All ±100 mA

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 3 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Electrical Characteristics

A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics Isolation Characteristics *All Typical values at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER V F Input Forward Voltage I F = 16mA All 1.3 1.75 V I R Reverse Leakage Current V R = 5V All 10 µA C J Capacitance V = 0 V, f = 1.0MHz All 50 pF OUTPUT DETECTOR BV 4-6 Breakdown Voltage Either Polarity I 4-6 = 10µA, I F = 0 H11F1M, H11F2M 30 V H11F3M 15 I 4-6 Off-State Dark Current V 4-6 = 15 V, I F = 0 All 50 nA V 4-6 = 15 V, I F = 0, T A = 100°C All 50 µA R 4-6 Off-State Resistance V 4-6 = 15 V, I F = 0 All 300 M Ω C 4-6 Capacitance V 4-6 = 15 V, I F = 0, f = 1MHz All 15 pF Symbol Characteristics Test Conditions Device Min Typ* Max Units DC CHARACTERISTICS R 4-6 On-State Resistance I F = 16mA, I 4-6 = 100µA H11F1M 200 Ω H11F2M 330 H11F3M 470 R 6-4 On-State Resistance I F = 16mA, I 6-4 = 100µA H11F1M 200 Ω H11F2M 330 H11F3M 470 Resistance, non-linearity and assymetry I F = 16mA, I 4-6 = 25µA RMS, f = 1kHz All 2 % AC CHARACTERISTICS t on Turn-On Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V All 45 µs t off Turn-Off Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V All 45 µs Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units V ISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V AC PEAK R ISO Isolation Resistance V I-O = 500 VDC All 10 Ω C ISO Isolation Capacitance f = 1MHz All 0.2 pF

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 4 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V PR Input to Output Test Voltage, Method b, V IORM x 1.875 = V PR , 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 V peak Input to Output Test Voltage, Method a, V IORM x 1.5 = V PR , Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 V peak V IORM Max. Working Insulation Voltage 850 V peak V IOTM Highest Allowable Over Voltage 6000 V peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V IO = 500V 10 Ω

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 6 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Typical Applications As a Variable Resistor As an Analog Signal Switch ISOLATED VARIABLE ATTENUATORS Distortion free attenuation of low level A.C. signals is accom- plished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. ISOLATED SAMPLE AND HOLD CIRCUIT Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude.. AUTOMATIC GAIN CONTROL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED’s controlling the filter’s transfer characteristic. TEST EQUIPMENT - KELVIN CONTACT POLARITY In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching. 500K VIN VOUT VIN VOUT 500K IF H11F1M IF H11F1M LOW FREQUENCY HIGH FREQUENCY DYNAMIC RANGE 70db FOR 0 ≤ IF ≤ 30mA@10KHz DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA@1MHz VIN VOUT IF VIN VOUT IF t H11F1M C VIN VOUT IF H11F1M AGC SIGNAL 500K CALL V1 Vn H11F1M MSB MSB CALL Vn DATA INPUT H11F1M LSB LSB H74A1 H74A1 A/D CONVERTER PROCESS CONTROL LOGIC SYSTEM DATA ACQUISITION IF1 ADJUSTS f1, IF2 ADJUSTS f2 IF1 A2 A3 H11F1M IF2 H11F1M IF AC H11F1M IF H11F1M IF ITEST B D H11F1M IF H11F1M DEVICE UNDER TEST PARAMETER SENSING BOARD IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 7 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 8 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

Ordering Information

Order Entry Identifier (Example) Description No option H11F1M Standard Through Hole Device S H11F1SM Surface Mount Lead Bend SR2 H11F1SR2M Surface Mount; Tape and Reel V H11F1VM IEC60747-5-2 approval TV H11F1TVM IEC60747-5-2 approval, 0.4" Lead Spacing SV H11F1SVM IEC60747-5-2 approval, Surface Mount SR2V H11F1SR2VM IEC60747-5-2 approval, Surface Mount, Tape and Reel H11F1 V X YY Q 43 5 Definitions

1 Fairchild logo

2 Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’

5 Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 9 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Carrier Tape Specification 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 10 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Reflow Profile Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (t S) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (t P) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. Time (seconds) Temperature (°C) Time 25°C to Peak 260 240 220 200 180 160 140 120 100 T L ts tL tP TP Tsmax Tsmin 120 Preheat Area Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S 240 360

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11F1M, H11F2M, H11F3M Rev. 1.0.5 11 H11F1M, H11F2M, H11F3M — Photo FET Optocouplers