H11F1M ONSEMI | Alldatasheet

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Technical content

Features

  • As a Remote Variable Resistor: ♦ ≤ 100 /C0087 to ≥ 300 M/C0087 ♦ ≤15 pF Shunt Capacitance ♦ ≥100 G/C0087 I/O Isolation Resistance
  • As an Analog Switch: ♦ Extremely Low Offset V oltage ♦ 60 Vpk−pk Signal Capability ♦ No Charge Injection or Latch−Up ♦ UL Recognized (File #E90700)
  • These are Pb−Free Devices Application
  • As a Remote Variable Resistor: ♦ Isolated Variable Attenuator ♦ Automatic Gain Control ♦ Active Filter Fine Tuning/Band Switching
  • As an Analog Switch: ♦ Isolated Sample and Hold Circuit ♦ Multiplexed, Optically Isolated A/D Conversion MARKING DIAGRAM SCHEMATIC H11F1 = Specific Device Code V = VDE Mark (Only appears on parts ordered with VDE option − See order entry table) X = One −Digit Year Code, e.g., “7” YY = Two Digit Work Week Ranging from “01” to “53” Q = Assembly Package Code See detailed ordering and shipping information on page 6 of this data sheet.

ORDERING INFORMATION

PDIP6 8.51x6.35, 2.54P CASE 646BY PDIP6 8.51x6.35, 2.54P CASE 646BX PDIP6 8.51x6.35, 2.54P CASE 646BZ H11F1 VXYYQ ON

1 OUTPUT

TERM.ANODE CATHODE OUTPUT TERM.

H11F1M, H11F2M, H11F3M www.onsemi.com SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1 < 150 Vrms I−IV < 300 Vrms I−IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input to Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC

1360 Vpeak

Input to Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC

1594 Vpeak

VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6,000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4″ Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW RIO Insulation Resistance at Ts, VIO = 500 V (Note 1) >109 /C0087 1. Safety limit values – maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +100 °C TSOL Lead Solder Temperature 260 for 10 seconds °C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 5 V IF(pk) Forward Current – Peak (10 /C0109s Pulse, 1% Duty Cycle) 1 A PD LED Power Dissipation Ambient 25°C Ambient 100 mW Derate Linearly from 25°C 1.33 mW/°C DETECTOR PD Detector Power Dissipation at 25°C 300 mW Derate Linearly from 25°C 4.0 mW/°C BV4−6 Breakdown Voltage (Either Polarity) H11F1M, H11F2M ±30 V H11F3M ±15 V I4−6 Continuous Detector Current (Either Polarity) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

H11F1M, H11F2M, H11F3M www.onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Test Conditions Min Typ* Max Unit EMITTER VF Input Forward Voltage IF = 16 mA − 1.3 1.75 V IR Reverse Leakage Current VR = 5 V − − 10 /C0109A CJ Capacitance V = 0 V, f = 1.0 MHz − 50 − pF OUTPUT DETECTOR BV4−6 Breakdown Voltage Either Polarity H11F1M, H11F2M I4−6 = 10 /C0109A, IF = 0 30 − − V H11F3M 15 − − I4−6 Off−State Dark Current V4−6 = 15 V, IF = 0 − − 50 nA V4−6 = 15 V, IF = 0, TA = 100°C − − 50 /C0109A R4−6 Off−State Resistance V4−6 = 15 V, IF = 0 300 − − M/C0087 C4−6 Capacitance V4−6 = 15 V, IF = 0, f = 1 MHz − − 15 pF TRANSFER CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit DC CHARACTERISTICS R4−6 On−State Resistance H11F1M IF = 16 mA, I4−6 = 100 /C0109A − − 200 /C0087 H11F2M − − 330 H11F3M − − 470 R6−4 On−State Resistance H11F1M IF = 16 mA, I6−4 = 100 /C0109A − − 200 /C0087 H11F2M − − 330 H11F3M − − 470 Resistance, Non−Linearity and Assymetry IF = 16 mA, I4−6 = 25 /C0109A RMS, f = 1 kHz − 2 − % AC CHARACTERISTICS ton Turn−On Time RL = 50 /C0087, IF = 16 mA, V4−6 = 5 V − − 45 /C0109s toff Turn−Off Time RL = 50 /C0087, IF = 16 mA, V4−6 = 5 V − − 45 /C0109s ISOLATION CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 − − /C0087 CISO Isolation Capacitance f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All Typical values at TA= 25°C.

H11F1M, H11F2M, H11F3M www.onsemi.com TYPICAL APPLICATIONS As a Variable Resistor LOW FREQUENCY Dynamic Range 70 db For 0 ≤ IF ≤ 30 mA 500K500K H11F1M H11F1M ISOLATED VARIABLE ATTENUATORS VIN VOUT VIN VOUT t H11F1M C @ 10 kHz HIGH FREQUENCY Dynamic Range 50 db For 0 ≤ IF ≤ 30 mA@ 1 MHz Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. ISOLATED VARIABLE ATTENUATORS As an Analog Signal Switch Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude. AUTOMATIC GAIN CONTROL MULTIPLEXED, OPTICALLY−ISSOLATED A/D CONVERSION H11F1M 500K IF IF VIN VOUT IF VIN IF VOUT VIN IF VOUT AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. CALL V1 H11F1M MSB MSB CALL DATA INPUT H11F1M LSB LSB H74A1 H74A1V1V2 Vn Vn The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING TEST EQUIPMENT − KELVIN CONTACT POLARITY A2 A3 H11F1M H11F1M A/D CONVERTER PROCESS CONTROL LOGIC SYSTEM IF2 IF2 IF2 ADJUSTS f1, IF2 ADJUSTS f2 The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band−switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED ’s controlling the filter’s transfer characteristic. A H11F1M H11F1M B D H11F1M H11F1M DEVICE UNDER TEST PARAMETER SENSING BOARD C IF IF IF IF IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2 In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid−State H11FXM eliminates these troubles while providing faster switching. ITEST

H11F1M, H11F2M, H11F3M www.onsemi.com REFLOW PROFILE Time (s) Temperature (/C0095C) Time 25°C to Peak TL ts tL tP TP Tsmax Tsmin Preheat Area Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s 120 240 360 100 120 140 160 180 200 220 240 260 Profile Feature Pb −Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (t S) from (Tsmin to Tsmax) 60–120 seconds Ramp−up Rate (tL to tP ) 3°C/seconds max. Liquidous Temperature (TL) 217°C Time (t L) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260 °C +0°C / –5°C Time (t P) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/seconds max. Time 25°C to Peak Temperature 8 minutes max. Option Order Entry Identifier (Example) Description No option H11F1M Standard Through Hole Device S H11F1SM Surface Mount Lead Bend SR2 H11F1SR2M Surface Mount; Tape and Reel V H11F1VM IEC60747−5−5 approval TV H11F1TVM IEC60747−5−5 approval, 0.4” Lead Spacing SV H11F1SVM IEC60747−5−5 approval, Surface Mount SR2V H11F1SR2VM IEC60747−5−5 approval, Surface Mount, Tape and Reel

PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13449GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13450GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51x6.35, 2.54P © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13451GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales