H11F1M

H11F1M FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

As a remote variable resistor: 100 Ω to 300M Ω 99.9% linearity 15pF shunt capacitance 100G Ω I/O isolation resistance As an analog switch: Extremely low offset voltage 60 V pk-pk signal capability No charge injection or latch-up t on , t off 15µS UL recognized (File #E90700)

Applications

As a remote variable resistor: Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch: Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion General Description The H11FXM series consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electri- cally isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages. Packages Schematic OUTPUT TERM. OUTPUT TERM. ANODE CATHODE

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 2 Absolute Maximum Ratings A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units TOTAL DEVICE T STG Storage Temperature All -55 to +150 T OPR Operating Temperature All -40 to +100 T SOL Lead Solder Temperature All 260 for 10 sec EMITTER I F Continuous Forward Current All 60 mA V R Reverse Voltage All 5 V I F(pk) Forward Current – Peak (10 µs pulse, 1% duty cycle) All 1 A P D LED Power Dissipation 25°C Ambient All 100 mW Derate Linearly from 25°C 1.33 mW/°C DETECTOR P D Detector Power Dissipation @ 25°C All 300 mW Derate linearly from 25°C 4.0 mW/°C BV 4-6 Breakdown Voltage (either polarity) H11F1M, H11F2M ±30 V H11F3M ±15 V I 4-6 Continuous Detector Current (either polarity) All ±100 mA

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 3

Electrical Characteristics

A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics Isolation Characteristics *All Typical values at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER V F Input Forward Voltage I F = 16mA All 1.3 1.75 V I R Reverse Leakage Current V R = 5V All 10 µA C J Capacitance V = 0 V, f = 1.0 MHz All 50 pF OUTPUT DETECTOR BV 4-6 Breakdown Voltage Either Polarity I 4-6 = 10µA, I F = 0 H11F1M, H11F2M 30 V H11F3M 15 I 4-6 Off-State Dark Current V 4-6 = 15 V, I F = 0 All 50 nA V 4-6 = 15 V, I F = 0, T A = 100°C All 50 µA R 4-6 Off-State Resistance V 4-6 = 15 V, I F = 0 All 300 M Ω C 4-6 Capacitance V 4-6 = 15 V, I F = 0, f = 1MHz All 15 pF Symbol Characteristics Test Conditions Device Min Typ* Max Units DC CHARACTERISTICS R 4-6 On-State Resistance I F = 16mA, I 4-6 = 100µA H11F1M 200 Ω H11F2M 330 H11F3M 470 R 6-4 On-State Resistance I F = 16mA, I 6-4 = 100µA H11F1M 200 Ω H11F2M 330 H11F3M 470 Resistance, non-linearity and assymetry I F = 16mA, I 4-6 = 25µA RMS, f = 1kHz All 0.1 % AC CHARACTERISTICS t on Turn-On Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V All 25 µS t off Turn-Off Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V All 25 µS Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units V ISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V AC PEAK R ISO Isolation Resistance V I-O = 500 VDC All 10 Ω C ISO Isolation Capacitance f = 1MHz All 0.2 pF

Figure 7. Resistive non-linearity vs. D.C. Bias

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 6 Typical Applications As a Variable Resistor As an Analog Signal Switch ISOLATED VARIABLE ATTENUATORS Distortion free attenuation of low level A.C. signals is accom- plished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. ISOLATED SAMPLE AND HOLD CIRCUIT Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude.. AUTOMATIC GAIN CONTROL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED’s controlling the filter’s transfer characteristic. TEST EQUIPMENT - KELVIN CONTACT POLARITY In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching. 500K VIN VOUT VIN VOUT 500K IF H11F1M IF H11F1M LOW FREQUENCY HIGH FREQUENCY DYNAMIC RANGE 70db FOR 0 ≤ IF ≤ 30mA@10KHz DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA@1MHz VIN VOUT IF VIN VOUT IF t H11F1M C VIN VOUT IF H11F1M AGC SIGNAL 500K CALL V1 Vn H11F1M MSB MSB CALL Vn DATA INPUT H11F1M LSB LSB H74A1 H74A1 A/D CONVERTER PROCESS CONTROL LOGIC SYSTEM DATA ACQUISITION IF1 ADJUSTS f1, IF2 ADJUSTS f2 IF1 A2 A3 H11F1M IF2 H11F1M IF AC H11F1M IF H11F1M IF ITEST B D H11F1M IF H11F1M DEVICE UNDER TEST PARAMETER SENSING BOARD IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 7 Package Dimensions Through Hole Surface Mount 0.4" Lead Spacing Recommended Pad Layout for Surface Mount Leadform Note: All dimensions are in inches (millimeters). 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.305 (7.75) 0.425 (10.79)

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 8

Ordering Information

Order Entry Identifier (Example) Description No option H11F1M Standard Through Hole Device S H11F1SM Surface Mount Lead Bend SR2 H11F1SR2M Surface Mount; Tape and Reel T H11F1TM 0.4" Lead Spacing V H11F1VM VDE 0884 TV H11F1TVM VDE 0884, 0.4" Lead Spacing SV H11F1SVM VDE 0884, Surface Mount SR2V H11F1SR2VM VDE 0884, Surface Mount, Tape and Reel H11F1M V X YY Q 43 5 Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 9 Carrier Tape Specifications Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

H11F1M, H11F2M, H11F3M Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com H11FXM Rev. 1.0.0 10 Rev. I28 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK FACT Quiet Series™ FACT FAST® FastvCore™ FPS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroPak™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC UniFET™ VCX™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.