H11F1

H11F1 FAIRCHILD | Alldatasheet

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Technical content

© 2002 Fairchild Semiconductor Corporation H11F1 H11F2 H11F3

DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo- detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES

As a remote variable resistor 100 Ω to 300 M Ω 99.9% linearity 15 pF shunt capacitance 100 G Ω I/O isolation resistance As an analog switch

• Extremely low offset voltage
• 60 V pk-pk signal capability
• No charge injection or latch-up on , t off 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)

APPLICATIONS

As a variable resistor –

• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion OUTPUT TERM. OUTPUT TERM. ANODE CATHODE

© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings A = 25°C unless otherwise specified) Parameter Symbol Device Value Units TOTAL DEVICE Storage Temperature T STG All -55 to +150 °C Operating Temperature T OPR All -55 to +100 °C Lead Solder Temperature T SOL All 260 for 10 sec °C EMITTER Continuous Forward Current I F All 60 mA Reverse Voltage V R All 5 V Forward Current - Peak (10 µs pulse, 1% duty cycle) I F(pk) All 1 A LED Power Dissipation 25°C Ambient P D All 100 mW Derate Linearly From 25°C 1.33 mW/ °C DETECTOR Detector Power Dissipation @ 25°C P D All 300 mW Derate linearly from 25°C 4.0 mW/ °C Breakdown Voltage (either polarity) BV 4-6 H11F1, H11F2 ±30 V H11F3 ±15 V Continuous Detector Current (either polarity) I 4-6 All ±100 mA

ELECTRICAL CHARACTERISTICS

A = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ* Max Unit EMITTER Input Forward Voltage I F = 16 mA V F All 1.3 1.75 V Reverse Leakage Current V R = 5 V I R All 10 µA Capacitance V = 0 V, f = 1.0 MHz C J All 50 pF OUTPUT DETECTOR Breakdown Voltage Either Polarity I 4-6 = 10µA, I F = 0 BV 4-6 H11F1, H11F2 30 V H11F3 15 Off-State Dark Current V 4-6 = 15 V, I F = 0 I 4-6 All 50 nA V 4-6 = 15 V, I F = 0, T A = 100°C All 50 µA Off-State Resistance V 4-6 = 15 V, I F = 0 R 4-6 All 300 M Ω Capacitance V 4-6 = 15 V, I F = 0, f = 1MHz C 4-6 All 15 pF

© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 ISOLATION CHARACTERISTICS Parameter Test Conditions Symbol Min Typ* Max Units Input-Output Isolation Voltage f = 60Hz, t = 1 min. V ISO

5300 Vac (rms)

= 500 VDC R ISO Ω Isolation Capacitance V I-O = 0, f = 1.0 MHz C ISO 2p F TRANSFER CHARACTERISTICS A = 25°C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device Min Typ* Max Units On-State Resistance I F = 16 mA, I 4-6 = 100 µA R 4-6 H11F1 200 Ω H11F2 330 H11F3 470 On-State Resistance I F = 16 mA, I 6-4 = 100 µA R 6-4 H11F1 200 Ω H11F2 330 H11F3 470 Resistance, non-linearity and assymetry I F = 16mA, I 4-6 = 25 µA RMS, f = 1kHz All 0.1 % AC Characteristics Test Conditions Symbol Device Min Typ* Max Units Turn-On Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V t on All 25 µS Turn-Off Time R L = 50 Ω , I F = 16mA, V 4-6 = 5V t off All 25 µS

Figure 7. Resistive non-linearity vs. D.C. Bias

© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 TYPICAL APPLICATIONS AS A VARIABLE RESISTOR AS AN ANALOG SIGNAL SWITCH ISOLATED VARIABLE ATTENUATORS Distortion free attenuation of low level A.C. signals is accom- plished by varying the IRED current, I F Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. ISOLATED SAMPLE AND HOLD CIRCUIT Accuracy and range are improved over conventional FET switches because the H11F has no charge injection from the control signal. The H11F also provides switching of either polarity input signal up to 30V magnitude. AUTOMATIC GAIN CONTROL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION The optical isolation, linearity and low offset voltage of the H11F allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING The linearity of resistance and the low offset voltage of the H11F allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1 IRED’s controlling the filter’s transfer characteristic. TEST EQUIPMENT - KELVIN CONTACT POLARITY In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11F eliminates these troubles while providing faster switching. 500K VIN VOUT VIN VOUT 500K 50Ω IF H11F1 IF H11F1 LOW FREQUENCY HIGH FREQUENCY DYNAMIC RANGE ≈ 70db FOR 0 ≤ IF ≤ 30mA@10KHz DYNAMIC RANGE ≈ 50db FOR 0 ≤ IF ≤ 30mA@1MHz VIN VOUT IF VIN VOUT IF t H11F1 C VIN VOUT IF H11F1 AGC SIGNAL 500K CALL V1 Vn H11F1 MSB MSB CALL Vn DATA INPUT H11F1 LSB LSB H74A1 H74A1 A/D CONVERTER PROCESS CONTROL LOGIC SYSTEM DATA ACQUISITION IF1 ADJUSTS f1, IF2 ADJUSTS f2 IF1 A2 A3 H11F1 IF2 H11F1 IF AC H11F1 IF H11F1 IF ITEST B D H11F1 IF H11F1 DEVICE UNDER TEST PARAMETER SENSING BOARD IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2

6/24/02Page 7 of 9© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 NOTE All dimensions are in inches (millimeters) Package Dimensions (Through Hole) Package Dimensions (Surface Mount) Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.100 (2.54) TYP 0.020 (0.51) MIN 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) PIN 1 ID. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.300 (7.62) TYP0° to 15° 0.154 (3.90) 0.100 (2.54) SEATING PLANE 0.016 (0.40) 0.008 (0.20) Lead Coplanarity : 0.004 (0.10) MAX 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) TYP 0.405 (10.30) MAX 0.315 (8.00) MIN 0.016 (0.40) MIN PIN 1 ID. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) TYP 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN SEATING PLANE 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) MIN 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) TYP 0.016 (0.41) 0.100 (2.54) TYP 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54)

6/24/02Page 8 of 9© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3

ORDERING INFORMATION

All dimensions are in inches (millimeters) Tape and reel quantity is 1,000 units per reel Option Order Entry Identifier Description S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and Reel W .W 0.4" Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4" Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape and Reel Carrier Tape Specifications 4.0 ± 0.1 Ø 1.55 ± 0.05 User Direction of Feed 4.0 ± 0.1 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 13.2 ± 0.2 4.85 ± 0.20 0.1 MAX 10.30 ± 0.20 9.55 ± 0.20 Ø 1.6 ± 0.1

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 6/24/02Page 9 of 9© 2002 Fairchild Semiconductor Corporation PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3