H11D3M

H11D1M FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

High voltage: – MOC8204M, BV CER = 400V – H11D1M, H11D2M, BV CER = 300V – H11D3M, BV CER = 200V High isolation voltage: – 7500 V AC peak, 1 second Underwriters Laboratory (UL) recognized File # E90700, Volume 2

Applications

The H11DXM, 4N38M and MOC8204M are photo- transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is sup- plied in a standard plastic six-pin dual-in-line package. Schematic EMITTER COLLECTOR ANODE CATHODE

6 BASE

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). Symbol Parameter Device Value Units TOTAL DEVICE T STG Storage Temperature All -55 to +150 °C T OPR Operating Temperature All -40 to +100 °C T SOL Lead Solder Temperature (Wave Solder) All 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C Derate Above 25°C All 260 mW 3.5 mW/°C EMITTER I F Forward DC Current (1) All 80 mA V R Reverse Input Voltage (1) All 6.0 V I F (pk) Forward Current – Peak (1µs pulse, 300pps) (1) All 3.0 A P D LED Power Dissipation @ T A = 25°C (1) Derate Above 25°C All 150 mW 1.41 mW/°C DETECTOR P D Power Dissipation @ T A = 25°C All 300 mW Derate linearly above 25°C 4.0 mW/°C V CER Collector to Emitter Voltage (1) MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 V CBO Collector Base Voltage (1) MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 V ECO Emitter to Collector Voltage (1) H11D1M, H11D2M, H11D3M, MOC8204M I C Collector Current (Continuous) All 100 mA

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 3

Electrical Characteristics

A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics A = 25°C Unless otherwise specified.) *All Typical values at T A = 25°C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit EMITTER V F Forward Voltage (2) I F = 10mA All 1.15 1.5 V V F T A Forward Voltage Temp. Coefficient All -1.8 mV/°C BV R Reverse Breakdown Voltage I R = 10µA All 6 25 V C J Junction Capacitance V F = 0V, f = 1MHz All 50 pF V F = 1V, f = 1MHz 65 pF I R Reverse Leakage Current (2) V R = 6V All 0.05 10 µA DETECTOR BV CER Breakdown Voltage Collector to Emitter (2) R BE = 1M Ω , I C = 1.0mA, I F = 0 MOC8204M 400 V H11D1M/2M 300 H11D3M 200 BV CEO No RBE, I C = 1.0mA 4N38M 80 BV CBO Collector to Base (2) I C = 100µA, I F = 0 MOC8204M 400 V H11D1M/2M 300 H11D3M 200 4N38M 80 BV EBO Emitter to Base I E = 100µA, I F = 0 4N38M 7 V BV ECO Emitter to Collector I E = 100µA, I F = 0 All 7 10 V I CER Leakage Current Collector to Emitter (2) BE = 1M Ω V CE = 300V, I F = 0, T A = 25°C MOC8204M 100 nA V CE = 300V, I F = 0, T A = 100°C 250 µA V CE = 200V, I F = 0, T A = 25°C H11D1M/2M 100 nA V CE = 200V, I F = 0, T A = 100°C 250 µA V CE = 100V, I F = 0, T A = 25°C H11D3M 100 nA V CE = 100V, I F = 0, T A = 100°C 250 µA I CEO No R BE , V CE = 60V, I F = 0, T A = 25°C 4N38M 50 nA Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units EMITTER CTR Current Transfer Ratio, Collector to Emitter I F = 10mA, V CE = 10V, R BE = 1M Ω H11D1M/2M/3M, MOC8204M 2 (20) mA (%) I F = 10mA, V CE = 10V 4N38M 2 (20) V CE(SAT) Saturation Voltage (2) I F = 10mA, I C = 0.5mA, R BE = 1M Ω H11D1M/2M/3M, MOC8204M 0.1 0.40 V I F = 20mA, I C = 4mA 4N38M 1.0 SWITCHING TIMES tON Non-Saturated Turn-on Time VCE = 10V, ICE = 2mA, RL = 100Ω All 5 µs tOFF Turn-off Time All 5 µs

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 4 Isolation Characteristics *All Typical values at TA = 25°C Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units VISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V ACPEAK RISO Isolation Resistance V I-O = 500 VDC All 10 11 Ω CISO Isolation Capacitance f = 1MHz All 0.2 pF

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 5 Typical Performance Curves TA - AMBIENT TEMPERATURE (˚C) NORMALIZE D I CER - DARK CURRENT Fig. 3 Normalized Output Current vs. LED Input Current IF - LED INPUT CURRENT (mA) 11 0 NORMALIZE D I CER - OUTPUT CURREN T 0.01 0.1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C TA - AMBIENT TEMPERATURE (˚C) NORMALIZED I CER - OUTPUT CURREN T Fig. 4 Normalized Output Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 0.1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C IF = 10 mA IF = 5 mA IF = 20 mA TA - AMBIENT TEMPERATURE (˚C) NORMALIZED I CBO - COLLECTOR-BASE CU RRENT Fig. 6 Normalized Collector-Base Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C IF = 50 mA IF = 10 mA IF = 5 mA Fig. 5 Normalized Dark Current vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 110 0.1 100 1000 10000 VCE = 300 V VCE = 100 V VCE = 50 V Normalized to: VCE = 100 V RBE = 106 Ω TA = 25˚C VCE - COLLECTOR VOLTAGE (V) NORMALIZED I CER - OUTPUT CURREN T Fig. 2 Normalized Output Characteristics 0.1 1 10 100 0.01 0.1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C IF = 50 mA IF = 5 mA IF = 10 mA IF - LED FORWARDCURRENT (mA) V F - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 11 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 55˚C TA = 25˚C TA = 100˚C

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 6 Package Dimensions Through Hole Surface Mount 0.4" Lead Spacing Recommended Pad Layout for Surface Mount Leadform Note: All dimensions are in inches (millimeters). 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.305 (7.75) 0.425 (10.79)

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 7

Ordering Information

Order Entry Identifier (Example) Description No option H11D1M Standard Through Hole Device S H11D1SM Surface Mount Lead Bend SR2 H11D1SR2M Surface Mount; Tape and Reel T H11D1TM 0.4" Lead Spacing V H11D1VM VDE 0884 TV H11D1TVM VDE 0884, 0.4" Lead Spacing SV H11D1SVM VDE 0884, Surface Mount SR2V H11D1SR2VM VDE 0884, Surface Mount, Tape and Reel H11D1 V X YY Q 43 5 Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 8 Carrier Tape Specifications Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers ©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11DXM, 4N38M, MOC8204M Rev. 1.0.2 9 TRADEMARKS Thef ollowing are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT FAST® FastvCore™ FPS™ FRFET® Global Power Resource SM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™ -3 SuperSOT™ -6 SuperSOT™ -8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHERDOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31