H11D3

H11D1_07 VISHAY | Alldatasheet

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Document Number: 83611 For technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.5, 19-Nov-07 1 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors

DESCRIPTION

The H11D1/H11D2/H11D3/H 11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1/H11D2 are identical and the H11D3/H11D4 are identical.

FEATURES

• C T R a t IF = 10 mA, BVCER = 10 V: ≥ 20 %  Good CTR linearly with forward current  Low CTR degradation  Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V  Isolation test voltage: 5300 V RMS  Low coupling capacitance  High common mode transient immunity  Package with base connection  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code H or J, double protection  DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending available with option 1  BSI IEC60950 IEC60065 F I M K O

APPLICATIONS

 Telecommunications  Replace relays Note For additional information on the available options refer to option information. i179004 i179004 B C E A C NC ORDER INFORMATION PART REMARKS H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %, DIP-6 H11D3 CTR > 20 %, DIP-6 H11D4 CTR > 20 %, DIP-6 H11D1-X007 CTR > 20 %, SMD-6 (option 7) H11D1-X009 CTR > 20 %, SMD-6 (option 9) H11D2-X007 CTR > 20 %, SMD-6 (option 7) H11D3-X007 CTR > 20 %, SMD-6 (option 7)

www.vishay.com For technical questions, contact: optocouplers.answers@vishay.com Document Number: 83611 2 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maxi mum Ratings can cause permanent damage to th e device. Functional operation of the device is not implied at these or any other co nditions in excess of those given in the operat ional sections of this document. Exposure to abs olute Maximum Rating for extended periods of the time can adversely affect reliability. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V DC forward current IF 60 mA Surge forward current t ≤ 10 µs I FSM 2.5 A Power dissipation Pdiss 100 mW OUTPUT Collector emitter voltage H11D1 V CE 300 V H11D2 V CE 300 V H11D3 V CE 200 V H11D4 V CE 200 V Collector base voltage H11D1 V CBO 300 V H11D2 V CBO 300 V H11D3 V CBO 200 V H11D4 V CBO 200 V Emitter base voltage VBEO 7V Collector current IC 100 mA Power dissipation Pdiss 300 mW COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 50014, part 2, Nov. 74 VISO 5300 V RMS Insulation thickness between emitter and detector ≥ 0.4 mm Creepage distance ≥ 7m m Clearance distance ≥ 7m m Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature range T stg - 55 to + 150 °C Operating temperature range T amb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C

Document Number: 83611 For technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.5, 19-Nov-07 3 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requier ements. Typical values are characteristic s of the device and are the result of en gineering evaluations. Typical values are for information only and are not part of the testing requirements. Note Switching times measurement-test circuit and waveforms ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 10 mA V F 1.1 1.5 V Reverse voltage I R = 10 µA V R 6V Reverse current V R = 6 V I R 0.01 10 µA Capacitance V R = 0 V, f = 1 MHz C O 25 pF Thermal resistance R thJA 750 K/W OUTPUT Collector emitter breakdown voltage I CE = 1 mA, RBE = 1 MΩ H11D1 BV CER 300 V H11D2 BV CER 300 V H11D3 BV CER 200 V H11D4 BV CER 200 V Emitter base breakdown voltage I EB = 100 µA BV EBO 7V Collector emitter capacitance V CE = 10 V, f = 1 MHz C CE 7p F Collector base capacitance V CB = 10 V, f = 1 MHz C CB 8p F Emitter base capacitance V EB = 5 V, f = 1 MHz C EB 38 pF Thermal resistance R th 250 K/W COUPLER Coupling capacitance C C 0.6 pF Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 MΩ IC/IF 20 % Collector emitter, saturation voltage IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ VCEsat 0.25 0.4 V Collector emitter, leakage current VCE = 200 V, RBE = 1 MΩ H11D1 I CER 100 nA H11D2 I CER 100 nA VCE = 300 V, RBE = 1 MΩ, Tamb = 100 °C H11D1 I CER 250 µA H11D2 I CER 250 µA CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 MΩ CTR 20 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V ton 5µ s Rise time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tr 2.5 µs Turn-off time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V toff 6µ s Fall time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tf 5.5 µs

www.vishay.com For technical questions, contact: optocouplers.answers@vishay.com Document Number: 83611 4 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Current Transfer Ratio (typ.) Fig. 2 - Diode Forward Voltage (typ.) Fig. 3 - Output Characteristics Fig. 4 - Output Characteristics Fig. 5 - Transistor Capacitances (typ.) Fig. 6 - Collector Emitter Leakage Current (typ.) 0.2 0.4 0.6 0.8 1.0 1.2 -4 10-3 10-2 10-1 NTCR IF (A)ih11d1_02 VCE = 10 V, normalized to IF = 10 mA, NCTR = f (IF) 1.2 1.1 1.0 0.9 10-1 101 102100 VF (V) IF (mA)ih11d1_03 VF = f (IF, TA) 25 °C 50 °C 75 °C 17.5 12.5 7.5 2.5 10-2 101 10210-1 100 ICE (mA) VCE (V)ih11d1_04 ICE = f (VCE, IB) IB = 100 µA IB = 80 µA IB = 60 µA IB = 40 µA IB = 20 µA 10-2 101 10210-1 100 ICE (mA) VCE (V)ih11d1_05 ICE = f (VCE, IF) IF = 100 µA IF = 80 µA IF = 60 µA IF = 40 µA IF = 20 µA 100 -2 101 10210-1 100 CXX (pF) VXX (V)ih11d1_06 f = 1 MHz, CCE = f (VCE) CCB = f (VCB), CEB = f (VEB) CCB CCE CEB 10-6 10-7 10-8 10-9 10-10 10-11 10-12 0 25 50 75 100 125 150 175 200 CCER (A) VCE (V)ih11d1_07 ICER = f (VCE) IF = 0, RBE = 1 MΩ

Document Number: 83611 For technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.5, 19-Nov-07 5 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Vishay Semiconductors Fig. 7 - Permissible Loss Diode Fig. 8 - Permi ssible Power Dissipation Fig. 9 Switching Times Measurement-Test Circuit and Waveform 100 03 0 2010 40 50 60 70 80 90 100 IF (mA) TA (°C)ih11d1_08 IF = f (TA) 400 350 300 250 200 150 100 03 0 2010 40 50 60 70 80 90 100 Ptot (mW) TA (°C)ih11d1_09 transistor diode Ptot = f (TA) ih11d1_01 toff tr 10 % 50 % 90 % ts tpdofftpdon ton trtdOutput Input 10 % 50 % 90 % IF RL IC VO VCC GND 47 Ω

www.vishay.com For technical questions, contact: optocouplers.answers@vishay.com Document Number: 83611 6 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage PACKAGE DIMENSIONS in inches (millimeters) i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18° 3°to 9° 0.300 – 0.347 (7.62– 8.81) typ. ISO Method A (0.45) 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028 (0.7) min. Option 7 18494 min. 0.315 (8.00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9

Document Number: 83611 For technical questi ons, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.5, 19-Nov-07 7 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.