H11D2W

H11D1 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Parameter Symbol Value Units TOTAL DEVICE TSTG -55 to +150 °CStorage Temperature Operating Temperature T OPR -55 to +100 °C Lead Solder Temperature T SOL 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C PD 260 mW Derate above 25°C 3.5 mW/°C EMITTER IF 80 mA*Forward DC Current *Reverse Input Voltage V R 6.0 V *Forward Current - Peak (1µs pulse, 300pps) I F(pk) 3.0 A *LED Power Dissipation @ TA = 25°C PD 150 mW Derate above 25°C 1.41 mW/°C

FEATURES

 High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V  High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute  Underwriters Laboratory (UL) recognized File# E90700

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. 8/9/00 200046A EMITTER COLLECTOR ANODE CATHODE

6 BASE

PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38

APPLICATIONS

 Power supply regulators  Digital logic inputs  Microprocessor inputs  Appliance sensor systems  Industrial controls ABSOLUTE MAXIMUM RATINGS

H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) All typical values at T A = 25°C ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) Characteristic Test Conditions Symbol Device Min Typ Max Unit EMITTER (IF = 10 mA) V F ALL 1.15 1.5 V*Forward Voltage Forward Voltage Temp. !VF ALL -1.8 mV/ °CCoefficient !TA Reverse Breakdown Voltage (I R = 10 µA) BV R ALL 6 25 V Junction Capacitance (VF = 0 V, f = 1 MHz) C J ALL 50 pF (VF = 1 V, f = 1 MHz) ALL 65 pF *Reverse Leakage Current (V R = 6 V) I R ALL 0.05 10 µA DETECTOR (RBE = 1 M") BV CER H11D1/2 300 *Breakdown Voltage (I C = 1.0 mA, IF = 0) H11D3/4 200 Collector to Emitter (No R BE ) (IC = 1.0 mA) BV CEO 4N38 80 H11D1/2 300 V*Collector to Base (I C = 100 µA, IF = 0) BV CBO H11D3/4 200 4N38 80 Emitter to Base (IE = 100 µA , IF = 0) BV EBO 4N38 7 Emitter to Collector BV ECO ALL 7 10 (VCE = 200 V, IF = 0, TA = 25°C) H11D1/2 100 nA *Leakage Current (V CE = 200 V, IF = 0, TA = 100°C) ICER 250 µA Collector to Emitter (V CE = 100 V, IF = 0, TA = 25°C) H11D3/4 100 nA (RBE = 1 M")( V CE = 100 V, IF = 0, TA = 100°C) 250 µA (No RBE ) (VCE = 60 V, IF = 0, TA = 25°C) I CEO 4N38 50 nA INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Symbol Value Units DETECTOR 300 mW*Power Dissipation @ TA = 25°CP D Derate linearly above 25°C 4.0 mW/ °C H11D1 - H11D2 300 *Collector to Emitter Voltage H11D3 - H11D4 V CER 200 4N38 80 H11D1 - H11D2 300 V*Collector Base Voltage H11D3 - H11D4 V CBO 200 4N38 80 *Emitter to Collector Voltage H11D1 - H11D2 VECO 7H11D3 - H11D4 Collector Current (Continuous) 100 mA ABSOLUTE MAXIMUM RATINGS (Cont.)

VCE - COLLECTOR VOLTAGE (V) NORMALIZED I CER - OUTPUT CURRENT Fig.2 Normalized Output Characteristics 0.1 1 10 100 0.01 0.1 Normalized to: V CE = 10 V IF = 10 mA R BE = 106 Ω TA = 25˚C IF = 50 mA IF = 5 mA IF = 10 mA IF - LED FORWARDCURRENT (mA) V F - FOR W ARD VOLTAGE (V) Fig.1 LED Forward Voltage vs. Forward Current 1 10 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 55˚C TA = 25˚C TA = 100˚C 8/9/00 200046A H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER H11D1 Current Transfer Ratio (IF = 10 mA, VCE = 10 V) H11D2 2 (20) Collector to Emitter (RBE = 1 M") CTR H11D3 mA (%) H11D4 1 (10) (IF = 10 mA, VCE = 10 V) 4N38 2 (20) (IF = 10 mA, IC = 0.5 mA) H11D1/2/3/4 0.1 0.40*Saturation Voltage (R BE = 1 M")V CE (SAT) V (IF = 20 mA, IC = 4 mA) 4N38 1.0 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ Max Unit SWITCHING TIMES (VCE =10 V, ICE = 2 mA) t on ALL 5Non-Saturated Turn-on Time µs Turn-off Time (R L = 100 ") t off ALL 5 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ Max Unit Isolation Voltage (I I-O#$1 µA, 1 min.) V ISO ALL 5300 (V AC RMS) 7500 (V AC PEAK) Isolation Resistance (V I-O= 500 VDC) R ISO ALL 10 11 " Isolation Capacitance (f = 1 MHz) C ISO ALL 0.5 pF ISOLATION CHARACTERISTICS Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at T A = 25°C

TA - AMBIENT TEMPERATURE ( ˚C) NORMALIZED I CER - D ARK CURRENT Fig.3 Normalized Output Current vs. LED Input Current IF - LED INPUT CURRENT (mA) 11 0 NORMALIZED I CER - OUTPUT CURRENT 0.01 0.1 Normalized to: V CE = 10 V IF = 10 mA R BE = 106 Ω TA = 25˚C TA - AMBIENT TEMPERATURE ( ˚C) NORMALIZED I CER - OUTPUT CURRENT Fig.4 Normalized Output Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 0.1 Normalized to: V CE = 10 V IF = 10 mA R BE = 106 Ω TA = 25˚C IF = 10 mA IF = 5 mA IF = 20 mA TA - AMBIENT TEMPERATURE ( ˚C) NORMALIZED I CBO - COLLECT OR-BASE CURRENT Normalized Collector-Base Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 Normalized to: V CE = 10 V IF = 10 mA R BE = 106 Ω TA = 25˚C IF = 50 mA IF = 10 mA IF = 5 mA Fig.5 Normalized Dark Current vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 110 0.1 100 1000 10000 VCE = 300 V VCE = 100 V VCE = 50 V Normalized to: V CE = 100 V R BE = 106 Ω TA = 25˚C 8/9/00 200046A H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

Lead Coplanarity : 0.004 (0.10) MAX 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) TYP 0.405 (10.30) MAX 0.315 (8.00) MIN 0.016 (0.40) MIN PIN 1 ID. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) TYP 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.165 (4.18) 0.020 (0.51) MIN 0.100 (2.54) TYP 0.020 (0.51) MIN 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) PIN 1 ID. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.135 (3.43) 0.300 (7.62) TYP0° to 15° 0.154 (3.90) 0.100 (2.54) SEAT ING PLAN E 0.016 (0.40) 0.008 (0.20) 321 456 SEATING PL ANE 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) MIN 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) TYP 0.016 (0.41) 0.100 (2.54) TYP

3 PIN 1

ID. 456 NOTE All dimensions are in inches (millimeters) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) Package Dimensions (Surface Mount)Package Dimensions (Through Hole) Package Dimensions (0.4”Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 8/9/00 200046A H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

S .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4 ” Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4 ” Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel Option Order Entry Identifier Description 4.0 ± 0.1 Ø 1.55 ± 0.05 User Direction of Feed 4.0 ± 0.1 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 13.2 ± 0.2 4.85 ± 0.20 0.1 MAX 10.30 ± 0.20 9.55 ± 0.20 Ø 1.6 ± 0.1 QT Carrier Tape Specifications (“D” Taping Orientation)

ORDERING INFORMATION

All dimensions are in millimeters 8/9/00 200046A H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

Reflow Profile (Black Package, No Suffix) H11D1 V XX YY K 43 5 Definitions

1 Fairchild logo

2 Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 Two digit year code, e.g., ‘03’

5 Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

• Peak reflow temperature: 225° C (package surface temperature)
• Time of temperature higher than 183° C for 60–150 seconds
• One time soldering reflow is recommended 215°C, 10–30 s

225 C peak

Time (Minute) 300 250 200 150 100 T emperature (°C) Time above 183° C, 60–150 sec Ramp up = 3 C/sec

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I13 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™Across the board. Around the world.™ The Power Franchise Programmable Active Droop™