4N38M ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
Features
- High V oltage: ♦ MOC8204M, BVCEO = 400 V ♦ H11D1M, BVCEO = 300 V ♦ H11D3M, BVCEO = 200 V
- Safety and Regulatory Approvals: ♦ UL1577, 4,170 V ACRMS for 1 Minute
- DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation V oltage
Applications
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls See detailed ordering and shipping information on page 410 of this data sheet.
ORDERING INFORMATION
ON = Company Logo H11D1 = Specific Device Code V = DIN EN/IEC60747 −5−5 Option (only appears on component ordered with this option) X = One −Digit Year Code YY = Digit Work Week Q = Assembly Package Code H11D1 VXYYQ ON
Figure 1. Schematics
1360 Vpeak
1594 Vpeak
safety ratings shall be ensured by means of protective circuits.
- Safety limit values – maximum values allowed in the event of a failure.
4N38M, H11D1M, H11D3M, MOC8204M www.onsemi.com ABSOLUTE MAXIUM RATINGS Symbol Parameter Device Value Unit TOTAL DEVICE TSTG Storage Temperature All −40 to + 125 °C TOPR Operating Temperature All −40 to + 100 °C TJ Junction Temperature All −40 to + 125 °C TSOL Lead Solder Temperature All 260 for 10 seconds °C PD Total Device Power Dissipation @ TA = 25°C All 420 mW Derate Above 25°C 3.5 mW/°C EMITTER IF Forward DC Current (Note 2) All 80 mA VR Reverse Input Voltage (Note 2) All 6.0 V IF(pk) Forward Current – Peak (1 μs pulse, 300 pps) (Note 2) All 3.0 A PD LED Power Dissipation @ TA = 25°C (Note 2) All 120 mW Derate Above 25°C 1.41 mW/°C DETECTOR PD Power Dissipation @ TA = 25°C All 300 mW Derate Linearly Above 25°C 4.0 mW/°C VCEO Collector to Emitter Voltage (Note 2) MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V VCBO Collector Base Voltage (Note 2) MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V VECO Emitter to Collector Voltage (Note 2) H11D1M, H11D3M, MOC8204M 7 V IC Collector Current (Continuous) All 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
4N38M, H11D1M, H11D3M, MOC8204M www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Test Conditions Device Min Typ Max Unit INDIVIDUAL COMONENT CHARACTERISTICS Emitter VF Forward Voltage (Note 3) IF = 10 mA All − 1.15 1.50 V ΔVF ΔTA Forward Voltage Temperature Coefficient All − −1.8 − mV/°C BVR Reverse Breakdown Voltage IR = 10 μA All 6 25 − V CJ Junction Capacitance VF = 0 V, f = 1 MHz All − 50 − pF VF = 1 V, f = 1 MHz − 65 − pF IR Reverse Leakage Current (Note 3) VR = 6 V All − 0.05 10 μA Detector BVCEO Breakdown Voltage Collector−to−Emitter (Note 3) RBE = 1 MΩ, IC = 1.0 mA, IF = 0 MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V No RBE, IC = 1.0 mA 4N38M 80 − − V BVCBO Collector to Base (Note 3) IC = 100 μA, IF = 0 MOC8204M 400 − − V H11D1M 300 − − V H11D3M 200 − − V 4N38M 80 − − V BVEBO Emitter to Base IE = 100 μA, IF = 0 4N38M 7 − − V BVECO Emitter to Collector IE = 100 μA, IF = 0 All 7 10 − V ICEO Leakage Current Collector to Emitter (Note 3) (RBE = 1 MΩ) VCE = 300 V, IF = 0, TA = 25°C MOC8204M − − 100 nA VCE = 300 V, IF = 0, TA = 100°C − − 250 μA VCE = 200 V, IF = 0, TA = 25°C H11D1M − − 100 nA VCE = 200 V, IF = 0, TA = 100°C − − 250 μA VCE = 100 V, IF = 0, TA = 25°C H11D3M − − 100 nA VCE = 100 V, IF = 0, TA = 100°C − − 250 μA No RBE, VCE = 60 V, IF = 0, TA = 25°C 4N38M − − 50 nA TRANSFER CHARACTERISTICS Emitter CTR Current Transfer Ratio, Collector−to−Emitter IF = 10 mA, VCE = 10 V, RBE = 1 MΩ H11D1M, H11D3M, MOC8204M 2 (20) − − mA (%) IF = 10 mA, VCE = 10 V 4N38M 2 (20) − − mA (%) VCE(SAT) Saturation Voltage (Note 3) IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ H11D1M, H11D3M, MOC8204M − 0.1 0.4 V IF = 20 mA, IC = 4 mA 4N38M − − 1.0 V Switching Times tON Non−Saturated Turn−on Time VCE = 10 V, IC = 2 mA, RL = 100 Ω All − 5 − μs tOFF Turn−off Time All − 5 − μs ISOLATION CHARACTERISTICS VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz − 0.2 − pF RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C 1011 − − Ω Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Figure 8. Reflow Profile Ramp−up Rate (t to tP) 3°C / second max. Ramp−down Rate (TP to TL) 6°C / second max. Time 25°C to Peak Temperature 8 minutes max. Table 1. ORDERING INFORMATION Specifications Brochure, BRD8011/D.
- The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices.
PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13449GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13450GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51x6.35, 2.54P © Semiconductor Components Industries, LLC, 2018 www.onsemi.com
PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DATE 31 JUL 2016 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13451GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP6 8.51X6.35, 2.54P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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