H11D1SR2VM

H11D1SR2VM FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

High voltage: – MOC8204M, BV CER = 400V – H11D1M, H11D2M, BV CER = 300V – H11D3M, BV CER = 200V High isolation voltage: – 7500 V AC peak, 1 second Underwriters Laboratory (UL) recognized File # E90700, Volume 2 IEC 60747-5-2 approved (ordering option V)

Applications

The 4N38M, H11DXM and MOC8204M are photo- transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is sup- plied in a standard plastic six-pin dual-in-line package. Schematic Package Outlines EMITTER COLLECTOR ANODE CATHODE

6 BASE

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 2 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). Symbol Parameter Device Value Units TOTAL DEVICE T STG Storage Temperature All -40 to +150 °C T OPR Operating Temperature All -40 to +100 °C T SOL Lead Solder Temperature (Wave Solder) All 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C Derate Above 25°C All 260 mW 3.5 mW/°C EMITTER I F Forward DC Current (1) All 80 mA V R Reverse Input Voltage (1) All 6.0 V I F (pk) Forward Current – Peak (1µs pulse, 300pps) (1) All 3.0 A P D LED Power Dissipation @ T A = 25°C (1) Derate Above 25°C All 150 mW 1.41 mW/°C DETECTOR P D Power Dissipation @ T A = 25°C All 300 mW Derate linearly above 25°C 4.0 mW/°C V CER Collector to Emitter Voltage (1) MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 V CBO Collector Base Voltage (1) MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 V ECO Emitter to Collector Voltage (1) H11D1M, H11D2M, H11D3M, MOC8204M I C Collector Current (Continuous) All 100 mA

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 3 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers

Electrical Characteristics

A = 25°C unless otherwise specified.) Individual Component Characteristics Transfer Characteristics A = 25°C Unless otherwise specified.) *All Typical values at T A = 25°C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit EMITTER V F Forward Voltage (2) I F = 10mA All 1.15 1.5 V V F T A Forward Voltage Temp. Coefficient All -1.8 mV/°C BV R Reverse Breakdown Voltage I R = 10µA All 6 25 V C J Junction Capacitance V F = 0V, f = 1MHz All 50 pF V F = 1V, f = 1MHz 65 pF I R Reverse Leakage Current (2) V R = 6V All 0.05 10 µA DETECTOR BV CER Breakdown Voltage Collector to Emitter (2) R BE = 1M Ω , I C = 1.0mA, I F = 0 MOC8204M 400 V H11D1M/2M 300 H11D3M 200 BV CEO No RBE, I C = 1.0mA 4N38M 80 BV CBO Collector to Base (2) I C = 100µA, I F = 0 MOC8204M 400 V H11D1M/2M 300 H11D3M 200 4N38M 80 BV EBO Emitter to Base I E = 100µA, I F = 0 4N38M 7 V BV ECO Emitter to Collector I E = 100µA, I F = 0 All 7 10 V I CER Leakage Current Collector to Emitter (2) BE = 1M Ω V CE = 300V, I F = 0, T A = 25°C MOC8204M 100 nA V CE = 300V, I F = 0, T A = 100°C 250 µA V CE = 200V, I F = 0, T A = 25°C H11D1M/2M 100 nA V CE = 200V, I F = 0, T A = 100°C 250 µA V CE = 100V, I F = 0, T A = 25°C H11D3M 100 nA V CE = 100V, I F = 0, T A = 100°C 250 µA I CEO No R BE , V CE = 60V, I F = 0, T A = 25°C 4N38M 50 nA Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units EMITTER CTR Current Transfer Ratio, Collector to Emitter I F = 10mA, V CE = 10V, R BE = 1M Ω H11D1M/2M/3M, MOC8204M 2 (20) mA (%) I F = 10mA, V CE = 10V 4N38M 2 (20) V CE(SAT) Saturation Voltage (2) I F = 10mA, I C = 0.5mA, R BE = 1M Ω H11D1M/2M/3M, MOC8204M 0.1 0.40 V I F = 20mA, I C = 4mA 4N38M 1.0 SWITCHING TIMES t ON Non-Saturated Turn-on Time VCE = 10V, ICE = 2mA, RL = 100Ω All 5 µs tOFF Turn-off Time All 5 µs

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 4 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers Isolation Characteristics *All Typical values at TA = 25°C Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units VISO Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V ACPEAK RISO Isolation Resistance V I-O = 500 VDC All 10 11 Ω CISO Isolation Capacitance f = 1MHz All 0.2 pF Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC

1594 V peak

Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC

1275 V peak

VIORM Max. Working Insulation Voltage 850 V peak VIOTM Highest Allowable Over Voltage 6000 V peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V IO = 500V 10 9 Ω

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 5 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers Typical Performance Curves TA – AMBIENT TEMPERATURE (˚C) NORMALIZE D I CER – DARK CURRENT Fig. 3 Normalized Output Current vs. LED Input Current IF – LED INPUT CURRENT (mA) 11 0 NORMALIZE D I CER – OUTPUT CU RRENT 0.01 0.1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C TA – AMBIENT TEMPERATURE (˚C) NORMALIZED I CER – OUTPUT CU RRENT Fig. 4 Normalized Output Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 0.1 Normalized to: VCE = 10V IF = 10mA RBE = 106 Ω TA = 25˚C IF = 10mA IF = 5mA IF = 20mA TA – AMBIENT TEMPERATURE (˚C) NORMALIZED I CBO – COLL ECTOR-BASE CURRENT Fig. 6 Normalized Collector-Base Current vs. Temperature -60 -40 -20 0 20 40 60 80 100 Normalized to: V CE = 10V IF = 10mA RBE = 106 Ω TA = 25˚CIF = 50mA IF = 10mA IF = 5mA Fig. 5 Normalized Dark Current vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 110 0.1 100 1000 10000 VCE = 300V VCE = 100V VCE = 50V Normalized to: VCE = 100V RBE = 106 Ω TA = 25˚C VCE – COLLECTOR VOLTAGE (V) NORMALIZED I CER – OUTPUT CU RRENT Fig. 2 Normalized Output Characteristics 0.1 1 10 100 0.01 0.1 Normalized to: VCE = 10V IF = 10mA RBE = 106 Ω TA = 25˚C IF = 50mA IF = 5mA IF = 10mA IF – LED FORWARDCURRENT (mA) V F – FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 11 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 T A = -55˚C TA = 25˚C TA = 100˚C

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 6 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 7 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers

Ordering Information

Order Entry Identifier (Example) Description No option H11D1M Standard Through Hole Device (50 units per tube) S H11D1SM Surface Mount Lead Bend SR2 H11D1SR2M Surface Mount; Tape and Reel T H11D1TM 0.4" Lead Spacing V H11D1VM VDE 0884 TV H11D1TVM VDE 0884, 0.4" Lead Spacing SV H11D1SVM VDE 0884, Surface Mount SR2V H11D1SR2VM VDE 0884, Surface Mount, Tape and Reel H11D1 V X YY Q 43 5 Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 8 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers Carrier Tape Specification Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,a n dis not intended to be an exhaustive list of all such trademarks. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 First Production 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers