H11C4 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Turn on current (I FT), 5.0 mA typical  Gate trigger current (I GT), 20 mA typical  Surge anode current, 5.0 A  Blocking voltage, 400 V gate trigger voltage (VGT),

0.6 V typical

 Isolation test voltage 5300 V RMS  Solid State reliability  Lead-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals  UL1577, File No. E52744 System Code H or J, Double Protection

Description

The H11C4/ H11C5/ H11C6 are optically coupled SCRs with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. The H11C4 and H11C5 are identical and have a max- imum turn-on-current of 11 mA. The H11C6 has a maximum of 14 mA. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause pe rmanent damage to the device. Func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Part Remarks H11C4 I FT ≤ 11 mA, DIP-6 H11C5 I FT ≤ 11 mA, DIP-6 H11C6 I FT ≤ 14 mA, DIP-6 H11C4-X006 I FT ≤ 11 mA, DIP-6 400 mil (option 6) H11C6-X009 I FT ≤ 14 mA, SMD-6 (option 9) Parameter Test condition Symbol Value Unit Peak reverse voltage V RM 6.0 V Forward continuous current I F 60 mA Peak forward current 1.0 ms, 1 % Duty Cycle I FM 3.0 A Power dissipation P diss 100 mW Derate linearly from 25 °C 1.33 mW/°C

www.vishay.com Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors Output Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Reverse gate voltage V RG 6.0 V Anode voltage DC or AC peak V A 400 V RMS forward current I FRMS 300 mA Surge anode current 10 ms duration I AS 5.0 A Peak forward current 100 µs, 1% Duty Cycle I FM 10 A Surge gate current 5.0 ms duration I GS 200 mA Power dissipation P diss 1000 mW Derate linearly from 25°C 13.3 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector referred to standard climate 23 °C/ 50 % RH, DIN 50014) V ISO 5300 V RMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance V IO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Total package dissipation P tot 400 mW Derate linearly from 25 °C 5.5 mW/°C Operating temperature range T amb - 55 to + 100 °C Storage temperature range T stg - 55 to + 150 °C Lead soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 10 mA V F 1.2 1.5 V Reverse current V R = 3.0 V I R 10 µA Capacitance V R = 0, f = 1.0 MHz C O 50 pF Parameter Test condition Symbol Min Typ. Max Unit Forward blocking voltage R GK = 10 KΩ, TA = 100 °C, Id = 150 µA VDM 400 V Reverse blocking voltage R GK = 10 KΩ, TA = 100 °C, Id = 150 µA VDM 400 V On-state voltage I T = 300 mA V t 1.1 1.3 V Holding current R GK = 27 KΩ, VFX = 50 V I H 500 µA

Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com Coupler Package Dimensions in Inches (mm) Gate trigger voltage V FX = 100 V, RGK = 27 kΩ, RL=10 KΩ VGT 0.6 1.0 V Forward leakage current R GK = 10 KΩ, VRX = 400 V, IF = 0, TA = 100 °C IR 150 µA Reverse leakage current R GK = 10 KΩ, VRX = 400 V, IF = 0, TA=100 °C IR 150 µA Gate trigger current V FX = 100 V, RRG = 27 KΩ, RL = 10 KΩ IGT 20 50 µA Capacitance, Anode to gate V = 0, f = 1.0 MHz 20 pF Capacitance, Gate to cathode V = 0, f = 1.0 MHz 350 pF Parameter Test condition Part Symbol Min Typ. Max Unit Turn-on current V DM = 50 V, RGK = 10 KΩ H11C4 I FT 20 mA H11C5 I FT 20 mA H11C6 I FT 30 mA VDM = 100 V, RGK = 27 KΩ H11C4 I FT 5.0 11 mA H11C5 I FT 5.0 11 mA H11C6 I FT 7.0 14 mA Parameter Test condition Symbol Min Typ. Max Unit i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. ISO Method A

www.vishay.com Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) Option 6 18493 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15° max. Option 9

Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423