H11C1 QT | Alldatasheet

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QT | PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS EEE eT H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 ee ———— PACKAGE DIMENSIONS DESCRIPTION X no te) chy 1) + = The H11C series consists of a gallium-arsenide infrared t 15° MAX emitting diode optically coupled with a light activated 6.35 silicon controlled rectifier in a dual-in-line package. REF 03 mo a i FEATURES & APPLICATIONS A + ha ia a3 P = 10A, T’L compatible, solid state relay = 25 W logic indicator lamp driver = High efficiency, low degradation, liquid epitaxial LED 254 ™ 200 V symmetrical transistor coupler (H11C1, H11C2, TvP H11C3) Poy = 400 V symmetrical transistor coupler (H11C4, H11C5, Li i, il 5.1 H11C6) Vy MAK = Underwriters Laboratory (UL) recognized—File Sa at #90700 = 0.51

431 MIN

ANODE [1 } 16] GATE ent yh ANODE [3] {4 CATH. sti602 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (1,=25° unless otherwise specified) TOTAL PACKAGE DETECTOR Peak forward voltage (H11C4, H11C5, H11C6) .. 400 V

e foul PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS ee Forward voltage Ve 12 15 v =10 mA Off-state voltage (H11C1, H11C2, H11C3) Vow 200 v Rex=10 kM, Tr= 100°C, la=50nA Rex=10 kK Rae=10 kD (H11C1, H11C2, H11C4, H11C5) bey 20 mA Vax=50 V, Rox=10 KO f=1 MHz

10A, TL COMPATIBLE, SOLID STATE ° RELAY 470.0 won | farn Use of the H11C4 for high sensitivity, 5300V 3° aac iS . . isolation capability, provides this highly reliable “co." 1 Y= <I WA Ola sonyact solid state relay design. This design is compat- be soi eH | rt fewse ible with 74, 74S and 74H series T'L logic Dy ° systems inputs and 220V AC loads up to 10A. 15060 (4) “a st2047 25W LOGIC INDICATOR LAMP DRIVER wwxcaTor The high surge capability and non-reactive input aon LAMP characteristics of the H11C allow it to directly couple, without to ice buffers, T°L and DTL logic to indicator and alarm devices, sv ste without danger of introducing noise and logic glitches. Loic ' Pa 4 goon zzovac weut = L--—-2-! ote al 56K sT2048 400V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the H11C provides a 400V pases Lili] ome transistor capable of conducting positive and negative signals with moor £3 lourur current transfer ratios over 1%. This function is useful in remote janet y—t instrumentation, high voltage power supplies and test equipment. Care should be taken not to exceed the H11C 400 mW power dissipation T2049 rating when used at high voltages. Fig 13. Coupled av/dt- Test circuit Vp = 800 Volts tp =.010 Seconds f = 25Hertz 9+ 100 VAC Ta = 25°C 1002 TZ Hic vit / | f# ° Y2y 7 “i a a 4 , E a = [O ° 0 0 tp avsdt 0 EXPONENTIAL ]_ OSCILLOSCOPE RAMP GEN. T2050