H11B1VM | DigiCamel IC Datasheet

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H11B1VM FAIRCHILD | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 10

Technical content

Features

High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Speciﬁcations UL, C-UL approved, File #E90700, Volume 2 IEC 60747-5-2 approved (ordering option V)

Applications

Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Schematic EMITTER COLLECTOR ANODE CATHODE

6 BASE

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 2 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler Absolute Maximum Ratings A = 25°C unless otherwise speciﬁed.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolu te maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE T STG Storage Temperature -50 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Lead Solder Temperature (Wave) 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C 250 mW Derate above 25°C 3.3 mW/°C EMITTER I F Continuous Forward Current 80 mA V R Reverse Voltage 3 V I F (pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A P D LED Power Dissipation @ T A = 25°C 150 mW Derate above 25°C 2.0 mW/°C DETECTOR BV CEO Collector-Emitter Breakdown Voltage 30 V BV CBO Collector-Base Breakdown Voltage 30 V BV ECO Emitter-Collector Breakdown Voltage 5 V P D Detector Power Dissipation @ T A = 25°C 150 mW Derate above 25°C 2.0 mW/°C I C Continuous Collector Current 150 mA

Electrical Characteristics

A = 25°C Unless otherwise speciﬁed.) Individual Component Characteristics Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER V F Input Forward Voltage* I F = 10mA 4NXXM 1.2 1.5 V H11B1M, TIL113M 0.8 1.2 1.5 I R Reverse Leakage Current* V R = 3.0V 4NXXM 0.001 100 µA V R = 6.0V H11B1M, TIL113M 0.001 10 C Capacitance* V F = 0V, f = 1.0MHz All 150 pF DETECTOR BV CEO Collector-Emitter Breakdown Voltage* I C = 1.0mA, I B = 0 4NXXM, TIL113M 30 60 V H11B1M 25 60 BV CBO Collector-Base Breakdown Voltage* I C = 100µA, I E = 0 All 30 100 V BV ECO Emitter-Collector Breakdown Voltage* I E = 100µA, I B = 0 4NXXM 5.0 10 V H11B1M, TIL113M 71 0 I CEO Collector-Emitter Dark Current* V CE = 10V, Base Open All 1 100 nA Symbol Parameter Test Conditions Device Min. Typ. Max. Unit DC CHARACTERISTICS I C(CTR) Collector Output Current* (1, 2) I F = 10mA, V CE = 10V, I B = 0 4N32M, 4N33M 50 (500) mA (%) 4N29M, 4N30M 10 (100) I F = 1mA, V CE = 5V H11B1M 5 (500) I F = 10mA, V CE = 1V TIL113M 30 (300) V CE(SAT) Saturation Voltage* (2) I F = 8mA, I C = 2.0mA 4NXXM 1.0 V TIL113M 1.25 I F = 1mA, I C = 1mA H11B1M 1.0 AC CHARACTERISTICS t on Turn-on Time I F = 200mA, I C = 50mA, V CC = 10V, R L = 100 Ω 4NXXM, TIL113M 5.0 µs I F = 10mA, V CE = 10V, R L = 100 Ω H11B1M 25 t off Turn-off Time I F = 200mA, I C = 50mA, V CC = 10V, R L = 100 Ω 4N32M, 4N33M, TIL113M 100 µs 4N29M, 4N30M I F = 10mA, V CE = 10V, R L = 100 Ω H11B1M 18 BW Bandwidth (3, 4) 30 kHz

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler A = 25°C Unless otherwise speciﬁed.) (Continued) Isolation Characteristics * Indicates JEDEC registered data. Notes: 1. The current transfer ratio(I C F ) is the ratio of the detector collector current to the LED input current. 2. Pulse test: pulse width = 300µs, duty cycle 2.0% . 3. I F adjusted to I C = 2.0mA and I C = 0.7mA rms. 4. The frequency at which I C is 3dB down from the 1kHz value. 5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Characteristic Test Conditions Device Min. Typ. Max. Units V ISO Input-Output Isolation Voltage (5) f = 60Hz, t = 1 sec. All 7500 V AC PEAK VDC 4N32M* 2500 V VDC 4N33M* 1500 R ISO Isolation Resistance (5) V I-O = 500VDC All 10 Ω C ISO Isolation Capacitance (5) V I-O = Ø, f = 1MHz All 0.8 pF Symbol Parameter Min. Typ. Max. Unit Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V PR Input to Output Test Voltage, Method b, V IORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC

1594 V peak

Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC

1275 V peak

VIORM Max. Working Insulation Voltage 850 V peak VIOTM Highest Allowable Over Voltage 6000 V peak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V IO = 500V 10 9 Ω

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 5 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler Typical Performance Curves Fig. 2 Normalized CTR vs. Forward Current IF - FORWARD CURRENT (mA) 02468 1 0 1 2 1 41 61 82 0 NORMALIZED CTR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10 mA Fig. 3 Normalized CTR vs. Ambient Temperature TA - AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 NORMALIZED CTR 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF = 5 mA IF = 10 mA IF = 20 mA Normalized to IF = 10 mA TA = 25°C IF - LED FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 11 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 25°C TA = -55°C TA = 100°C Fig. 5 CTR vs. RBE (Saturated) RBE- BASE RESISTANCE (k Ω) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF = 20 mA IF = 10 mA IF = 5 mA VCE= 0.3 V Fig. 4 CTR vs. RBE (Unsaturated) RBE- BASE RESISTANCE (kΩ) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE= 5.0 V IF = 20 mA IF = 10 mA IF = 5 mA 0.01 0.1 1 10 0.001 0.01 0.1 100 IF = 5 mA IF = 20 mA IF = 10 mA Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current IC - COLLECTOR CURRENT (mA) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) IF = 2.5 mA TA = 25˚C

Figure 11. Switching Time Test Circuit and Waveforms

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 7 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

Ordering Information

Sufﬁx Example Option No Sufﬁx 4N32M Standard Through Hole Device (50 units per tube) S 4N32SM Surface Mount Lead Bend SR2 4N32SR2M Surface Mount; Tape and Reel (1,000 units per reel) T 4N32TM 0.4" Lead Spacing V 4N32VM VDE 0884 TV 4N32TVM VDE 0884, 0.4" Lead Spacing SV 4N32SVM VDE 0884, Surface Mount SR2V 4N32SR2VM VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel) 4N29 V X YY Q 43 5 Deﬁnitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 9 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler Tape Dimensions Note: All dimensions are in millimeters. Reﬂow Soldering Proﬁle 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.3 10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,a n dis not intended to be an exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™* Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power Resource SM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™ -3 SuperSOT™ -6 SuperSOT™ -8 SupreMOS™ SyncFET™ Sync-Lock™ ® * TheP ower Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™ * µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ *T rademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, faileda pplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicala n dproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 First Production 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler

Product Information

H11B1VM specifications and overview.

Summary

General Purpose 6-Pin Photodarlington Optocoupler

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Source title H11B1VM Datasheet(PDF) - Fairchild Semiconductor

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