4N33SM ONSEMI | Alldatasheet
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Technical content
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler December 2014 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler
Features
High Sensitivity to Low Input Drive Current Meets or Exceeds All JEDEC Registered Specifications Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
Telecommunications Equipment Portable Electronics Solid State Relays Interfacing Coupling Systems of Different Potentials and Impedances
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter opti- cally coupled to a silicon planar photodarlington. Schematic EMITTER COLLECTOR ANODE CATHODE
6 BASE
Figure 1. Schematic Figure 2. Package Outlines
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 2 Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 V RMS I–IV < 300 V RMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x 1.6 = V PR Type and Sample Test with t m = 10 s, Partial Discharge < 5 pC 1360 V peak Input-to-Output Test Voltage, Method B, V IORM x 1.875 = V PR 100% Production Test with t m = 1 s, Partial Discharge < 5 pC 1594 V peak V IORM Maximum Working Insulation Voltage 850 V peak V IOTM Highest Allowable Over-Voltage 6000 V peak External Creepage 7m m External Clearance 7m m External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T S Case Temperature (1) 175 °C I S,INPUT Input Current (1) 350 mA P S,OUTPUT Output Power (1) 800 mW R IO Insulation Resistance at T S , V IO = 500 V (1) > 10 Ω
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit TOTAL DEVICE T STG Storage Temperature -40 to +125 °C T OPR Operating Temperature -40 to +100 °C T J Junction Temperature -40 to +125 T SOL Lead Solder Temperature 260 for 10 seconds °C P D Total Device Power Dissipation @ T A = 25°C 270 mW Derate Above 25°C 3.3 mW/°C EMITTER I F Continuous Forward Current 80 mA V R Reverse Voltage 3 V I F (pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A P D LED Power Dissipation @ T A = 25°C 120 mW Derate above 25°C 2.0 mW/°C DETECTOR BV CEO Collector-Emitter Breakdown Voltage 30 V BV CBO Collector-Base Breakdown Voltage 30 V BV ECO Emitter-Collector Breakdown Voltage 5 V P D Detector Power Dissipation @ T A = 25°C 150 mW Derate Above 25°C 2.0 mW/°C I C Continuous Collector Current 150 mA
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 4
Electrical Characteristics
T A = 25°C Unless otherwise specified. Individual Component Characteristics Notes: 2. Indicates JEDEC registered data. Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER V F Input Forward Voltage (2) I F = 10 mA 4NXXM 1.2 1.5 V H11B1M, TIL113M 0.8 1.2 1.5 V I R Reverse Leakage Current (2) V R = 3.0 V 4NXXM 0.001 100 µA V R = 6.0 V H11B1M, TIL113M 0.001 10 µA C Capacitance (2) V F = 0V, f = 1.0 MHz All 150 pF DETECTOR BV CEO Collector-Emitter Breakdown Voltage (2) I C = 1.0 mA, I B = 0 4NXXM, TIL113M 30 60 V H11B1M 25 60 V BV CBO Collector-Base Breakdown Voltage (2) I C = 100 µA, I E = 0 All 30 100 V BV ECO Emitter-Collector Breakdown Voltage (2) I E = 100 µA, I B = 0 4NXXM 5.0 10 V H11B1M, TIL113M 71 0 V I CEO Collector-Emitter Dark Current (2) V CE = 10 V, Base Open All 1 100 nA
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 5 (Continued) T A = 25°C Unless otherwise specified. Transfer Characteristics Notes: 3. Indicates JEDEC registered data. 4. The current transfer ratio(I C / I F ) is the ratio of the detector collector current to the LED input current. 5. Pulse test: pulse width = 300 µs, duty cycle 2.0% . 6. I F adjusted to I C = 2.0 mA and I C = 0.7 mA rms. 7. The frequency at which I C is 3 dB down from the 1 kHz value. Isolation Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit DC CHARACTERISTICS I C(CTR) Collector Output Current (3)(4)(5) I F = 10 mA, V CE = 10 V, I B = 0 4N32M, 4N33M 50 (500) mA (%) 4N29M, 4N30M 10 (100) mA (%) I F = 1 mA, V CE = 5 V H11B1M 5 (500) mA (%) I F = 10 mA, V CE = 1 V TIL113M 30 (300) mA (%) V CE(SAT) Saturation Voltage (3)(5) I F = 8 mA, IC = 2.0 mA 4NXXM 1.0 V TIL113M 1.25 V IF = 1 mA, IC = 1 mA H11B1M 1.0 V AC CHARACTERISTICS ton Turn-on Time IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω 4NXXM, TIL113M 5.0 µs IF = 10 mA, VCE = 10 V, RL = 100 Ω H11B1M 25 µs toff Turn-off Time IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω 4N32M, 4N33M, TIL113M 100 µs 4N29M, 4N30M 40 µs IF = 10 mA, VCE = 10 V, RL = 100 Ω H11B1M 18 µs BW Bandwidth(6)(7) 30 kHz Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage t = 1 Minute 4170 VAC RMS CISO Isolation Capacitance V I-O = 0 V, f = 1 MHz 0.2 pF RISO Isolation Resistance V I-O = ±500 VDC, TA = 25°C 10 11 Ω
Figure 14. Reflow Profile
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 9
Ordering Information
Note: 8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M devices. Marking Information Figure 15. Top Mark Table 1. Top Mark Definitions
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
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