H11A1Z ETC1 | Alldatasheet

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GENL INSTR OPTOELEK 88 De g3ss0128 ooo2sa7 ? § TOELEK 88D 02887 D7-4/-SF

3990128 GENL INSTR, OP (

GENERAL] . © VDE APPROVED ff . INSTRUMENT | TRANSISTOR OUTPUT OPTOCOUPLER § 2 ' a Ze wn —— H1I1A1Z PACKAGE DIMENSIONS DESCRIPTION no on »- The H1fAt is a phototransistor-type optically SOBGEOE to . coupled isolator. An infrared emitting diode 18° MAX manufactured from specially grown gallium arsenide G.B6 (270) is setectively coupled with an NPN silicon : | 63S (250) 6.36 (014) phototransistor in a standard plastic six-pin dual-in- , OAR) : 0.20 (006) line package. ' b) TT _ | “asnian| 12 1.78 (07% REF + sagtabeeers B38 (HH (80) ® High isolation voltage t mF 5300 VAC RMS — 5 seconds

7500 VAC PEAK — 5 seconds 50%

. ® Minimum current transfer ratio of 2EALIOHTYP {| — fe-t.78 (070) TYP = Underwriters Laboratory (UL} recognized : 7 . File ¥ES0151 i ee Bad 495 (196) ® VDE approval Certificate 39 419 for HI1A1Z iL iris Ly sas eres, M coors APPLICATIONS | $3954120) = si ! . Fower supply reguisiore

8 Digital logic in

ose (022) 1.27 (06s exces . Microprocessor inputs —--- = Appliance sensor systems 0.41 {016} DIMENSIONS 1% mem (INCHES) « Industrial controle ANODE! 1) 6|BASE Car dy, ae 3 A)EMIT. C2078 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (T~ = 25°C Uniess Otherwise Specified) TOTAL PACKAGE INPUT DIODE Lead temperatura Poak forward currant Oerate limearty (OM 25°C «1... ee ene nee ees TS OS OUTPUT TRANSISTOR Power Oi4sipation at 25°C oo... cece seer eter cweee ERO W Derate linearty from 26°C 2. ...sccce eens e eee 2B7 MWC VORO ccc ccc cceeevcegecensueesccutsntanawenwssscars POW VECO cacrectnveercarnceneunscrsentaraccecnceonereernl , 55 . te a,

GENL INSTR. OPTOELEK 88 Def} 3eso1z6 oooz88a 9 ff —3B90128 _GENL_ INSTR,. OPTOELEK =” .,., 88D 02888 D 7-4-2 ELECTRO-OPTICAL CHARACTERISTICS (Ta = 25°C Unless Otherwise Specified) | | a TRANSFER CHARACTERISTICS * | | CHARACTERISTIC SYMBOL MIN. TYP, MAX, UNITS TEST CONDITIONS = . Current Transfer Ratio : . Oe callector to emitter . CTR “ . le = 10 MA. Vee = 10V Saturation voltage - , Voersat) 04 04 ~ Vv le = 10 mA, lo = 0.5 mA Non-setwateg is 7 Turn-on time : leon ; 2. ; s Vee 3 Vee sm, . Z Turn-off tree . fear 2 a “s See Fi >. Fry Turn-on time ton m0 ns Vee - + A v, lcs 50 pA, ‘ » . , Tyrn-ont tne : ; her MO as See Figure A ; isolation voltage Vso $200 Vac RMS Paetative rasrnldity = 0%, wos ' bo = 10 wA, 5 seconds ‘ 7500 Vac PEAK = Relative humidity $ 0% , b-o = 10 pA, § seconds . isolation resistance > ~~: Puss 19" - ohms Vig = Soo VOC * isolation capacitance - Core Os . pF t= 1MHz . INDIVIDUAL COMPONENT CHARACTERISTICS . | CHARACTERISTIC SYMBOL MIN. TYP. MAX UNITS. TEST CONDITIONS , Forwsre voltage Wo ao Vo =m , Forward voliage Senpersture ; 8 conttiognt 18 merc = 2 Reverse votlage Va 3.0 2% Vv ln = 105A - 25] Junction capacitance Cs 3) pe Ve = OV, f= 1 MHz ; 6 pe Ve = 1 f= 1 MHz Peverss leabage curren . fey Os 0 wa Va = 30V . Coliecior to gmitter 6Vceo 2» 45 v le* 10mA, fe «0 « Collector to base . 8Vce0 70 1W v Ie = 100 pA, le * 0 ¢ Emitter to cotiector Veco ? 10 ¥ le * 100 pA, if = 0 . 5 Collector to emitter liceo ' § SO nA Vee = 10V.le =90 | 2 Collector to basa go - : 20 na Vee = 10V. te = 0 . Collector to emitter eo! 8. oF Vee ~ Of = 1 MHz . Collector to base oa . ’ 20 oF Vee = 5,1 = 1 MHz . Emitter to base we Ss , ” pF Ven = 0,1 = 1 MHz

GENL INSTR» OPTOELEK &8& de fj 3ac0128 0002889 0 a 3 ——3890128 GENL INSTR, OPTOELEK 88D o ALLA OT 4t-83 ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C Unlese Otherwise Specified) es 73” s ; belt AA iL SLI ZA ity A jos SV AVAY Ate nn ; | | &® 9 16 14 42 13 «14 15 Qo 5 10 15 2 Vr—1 Volts C128 ie — (mAi c679 Fig. 1. Forward Voltage vs. Fig, 2, Normalized Current ep A onl rt | ae ul Cy iN ° A Alli ill E os Ay; atin E ou waa Hil aaa on WA HII | nahi ot PH meni i AHHH oa EL L 2 a -75 00 -2 0 +25 +60 +75 #100 #125 10K TOOK 1M Ta — Ci C1620 Rae — BASE RESISTANCE — (> Ambient Temperature (Tp awl At Hit Last OT _ vee Te 1 Regs eat Ee COUCA cot tHe =oee THU TT ZA Tl Bot LUT Sy | oan SST tt a Ee oo FHI Ct 2 DAMN Li aii 10K 100K 1M 10K WOK iM xe Ree — BASE RESISTANCE — iM) Age — BASE RESISTANCE — (f) Ccise2 cies

GENL INSTR» OPTOELEK 88 dep 3esoi2s ooozaso 7 ff 07-4)-93 HITA1 HITAIZ ELECTRICAL CHARACTERISTIC CURVES (Ta = 28°C Uniess Otherwise Specitied) : 12 . 12 _ pea ! Yoo 6 {CIINI Sh fe ST Ai rs rTP tit a ee pee ee i| Fy = 10082 | 09 ‘See Fig, 10" 04 wK 100K ay eo 0 5 0 i$ a Ree — BASE RESISTANCE — ‘ft: lo — cma) cies C1685 Voc = 10V : i ae PULSE WIDTH = 100 4s | ouTeuT peut DUTY CYCLE ~ 10% ov | ! - i \\ 1 t cx OUTPUT F pee 1 10% \\ | ' — td = ri tonter tott Fe C1296A C194 Fig. 9. Switching Time Test Circuit and Wavolorm