H11A1VM FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

UL recognized (File # E90700, Volume 2) VDE recognized (File # 102497) – Add option V (e.g., 4N25VM)

Applications

Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon pho- totransistor in a 6-pin dual in-line package. Schematic Package Outlines PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 3N C

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 2 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Absolute Maximum Ratings A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Electrical Characteristics

A = 25°C unless otherwise specified) Individual Component Characteristics Isolation Characteristics *Typical values at T A = 25°C Symbol Parameter Value Units TOTAL DEVICE T STG Storage Temperature -40 to +150 °C T OPR Operating Temperature -40 to +100 °C T SOL Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C P D Total Device Power Dissipation @ T A = 25°C Derate above 25°C 250 mW 2.94 EMITTER I F DC/Average Forward Input Current 60 mA V R Reverse Input Voltage 6 V I F (pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A P D LED Power Dissipation @ T A = 25°C Derate above 25°C 120 mW 1.41 mW/°C DETECTOR V CEO Collector-Emitter Voltage 30 V V CBO Collector-Base Voltage 70 V V ECO Emitter-Collector Voltage 7 V P D Detector Power Dissipation @ T A = 25°C Derate above 25°C 150 mW 1.76 mW/°C Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER V F Input Forward Voltage I F = 10mA 1.18 1.50 V I R Reverse Leakage Current V R = 6.0V 0.001 10 µA DETECTOR BV CEO Collector-Emitter Breakdown Voltage I C = 1.0mA, I F = 0 30 100 V BV CBO Collector-Base Breakdown Voltage I C = 100µA, I F = 0 70 120 V BV ECO Emitter-Collector Breakdown Voltage I E = 100µA, I F = 0 7 10 V I CEO Collector-Emitter Dark Current V CE = 10V, I F = 0 1 50 nA I CBO Collector-Base Dark Current V CB = 10V 20 nA C CE Capacitance V CE = 0V, f = 1 MHz 8 pF Symbol Characteristic Test Conditions Min. Typ.* Max. Units V ISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk) R ISO Isolation Resistance V I-O = 500 VDC 10 Ω C ISO Isolation Capacitance V I-O = &, f = 1MHz 0.2 2 pF

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 3 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers (Continued) A = 25°C unless otherwise specified) Transfer Characteristics * Typical values at T A = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTICS CTR Current Transfer Ratio, Collector to Emitter I F = 10mA, V CE = 10V 4N35M, 4N36M, 4N37M 100 % H11A1M 50 H11A5M 30 4N25M, 4N26M H11A2M, H11A3M 4N27M, 4N28M H11A4M I F = 10mA, V CE = 10V, T A = -55°C 4N35M, 4N36M, 4N37M I F = 10mA, V CE = 10V, T A = +100°C 4N35M, 4N36M, 4N37M V CE (SAT) Collector-Emitter Saturation Voltage I C = 2mA, I F = 50mA 4N25M, 4N26M, 4N27M, 4N28M, 0.5 V I C = 0.5mA, I F = 10mA 4N35M, 4N36M, 4N37M 0.3 H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 0.4 AC CHARACTERISTICS T ON Non-Saturated Turn-on Time I F = 10mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M 2µ s I C = 2mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N35M, 4N36M, 4N37M 21 0 µ s T OFF Turn-off Time I F = 10mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 2µ s I C = 2mA, V CC = 10V, R L = 100 Ω (Fig. 11) 4N35M, 4N36M, 4N37M 21 0

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 4 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves Fig. 2 Normalized CTR vs. Forward Current IF - FORWARD CURRENT (mA) 02468 1 0 1 2 1 4 1 6 1 8 2 0 NORMALIZED CTR 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10 mA Fig. 3 Normalized CTR vs. Ambient Temperature TA - AMBIENT TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 NORMALIZED CTR 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF = 5 mA IF = 10 mA IF = 20 mA Normalized to IF = 10 mA TA = 25°C IF - LED FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 11 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 25°C TA = -55°C TA = 100°C Fig. 5 CTR vs. RBE (Saturated) RBE- BASE RESISTANCE (k Ω) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF = 20 mA IF = 10 mA IF = 5 mA VCE= 0.3 V Fig. 4 CTR vs. RBE (Unsaturated) RBE- BASE RESISTANCE (kΩ) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 5.0 V IF = 20 mA IF = 10 mA IF = 5 mA 0.01 0.1 1 10 0.001 0.01 0.1 100 IF = 5 mA IF = 20 mA IF = 10 mA Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current IC - COLLECTOR CURRENT (mA) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) IF = 2.5 mA TA = 25˚C

Figure 11. Switching Time Test Circuit and Waveforms

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 6 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Package Dimensions 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 8.13–8.89 6.10–6.60 Pin 1 3.28–3.53 2.54 (Bsc)(0.86) 0.41–0.51 1.02–1.78 0.76–1.14 7.62 (Typ.) 15° (Typ.) 0.20–0.30 0.20–0.30 10.16–10.80 Through Hole 0.4" Lead Spacing Surface Mount Rcommended Pad Layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13–8.89 Note: All dimensions in mm. 6.10–6.60 8.43–9.90 Pin 1 0.25–0.36 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.38 (Min.) 3.28–3.53 5.08 (Max.) 0.20–0.30 0.16–0.88 (8.13)

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 7 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers

Ordering Information

Order Entry Identifier (Example) Description No option 4N25M Standard Through Hole Device S 4N25SM Surface Mount Lead Bend SR2 4N25SR2M Surface Mount; Tape and Reel T 4N25TM 0.4" Lead Spacing V 4N25VM VDE 0884 TV 4N25TVM VDE 0884, 0.4" Lead Spacing SV 4N25SVM VDE 0884, Surface Mount SR2V 4N25SR2VM VDE 0884, Surface Mount, Tape and Reel *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. Definitions 1F airchild logo 2D evice number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5T wo digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 8 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Carrier Tape Specification Reflow Profile 4.0 ± 0.1 Ø 1.5 MIN User Direction of Feed 2.0 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 24.0 ± 0.3 12.0 ± 0.1 0.30 ± 0.05 21.0 ± 0.1 4.5 ± 0.20 0.1 MAX 10.1 ± 0.20 9.1 ± 0.20 Ø 1.5 ± 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 Time (s) 0 60 180120 270 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 360 1.822°C/Sec Ramp up rate

33 Sec

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,a n dis not intended to be an exhaustive list of all such trademarks. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers