H11A1M ONSEMI | Alldatasheet
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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 2 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Note: 1. Safety limit values – maximum values allowed in the event of a failure. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit VPR Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 V peak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 V peak VIORM Maximum Working Insulation Voltage 850 V peak VIOTM Highest Allowable Over-Voltage 6000 V peak External Creepage 7m m External Clearance 7m m External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Input Current(1) 350 mA PS,OUTPUT Output Power(1) 800 mW RIO Insulation Resistance at TS, VIO = 500 V(1) > 109
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 3 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C TJ Junction Temperature -40 to +125 ºC TSOL Lead Solder Temperature 260 for 10 seconds °C PD Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 2.94 mW/°C EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V IF(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3 A PD LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 1.41 mW/°C DETECTOR VCEO Collector-to-Emitter Voltage 30 V VCBO Collector-to-Base Voltage 70 V VECO Emitter-to-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 4 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Electrical Characteristics
TA = 25°C unless otherwise specified. Individual Component Characteristics Transfer Characteristics Isolation Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage I F = 10 mA 1.18 1.50 V IR Reverse Leakage Current V R = 6.0 V 0.001 10 µA DETECTOR BVCEO Collector-to-Emitter Breakdown Voltage I C = 1.0 mA, IF = 0 30 100 V BVCBO Collector-to-Base Breakdown Voltage I C = 100 µA, IF = 0 70 120 V BVECO Emitter-to-Collector Breakdown Voltage I E = 100 µA, IF = 0 7 10 V ICEO Collector-to-Emitter Dark Current V CE = 10 V, IF = 0 1 50 nA ICBO Collector-to-Base Dark Current V CB = 10 V 20 nA CCE Capacitance V CE = 0 V, f = 1 MHz 8 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit DC CHARACTERISTICS CTR Current Transfer Ratio,Collector-to- Emitter IF = 10 mA, VCE = 10 V 50 % VCE(SAT) Collector-to-Emitter Saturation Voltage IC = 0.5 mA, IF = 10 mA 0.4 V AC CHARACTERISTICS TON Non-Saturated Turn-on Time IF = 10 mA, VCC = 10 V, RL = 100 (Figure 13) 2µ s TOFF Turn-off Time IF = 10 mA, VCC = 10 V, RL = 100 (Figure 13) 2µ s Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage t = 1 Minute 4170 VAC RMS CISO Isolation Capacitance V I-O = 0 V, f = 1 MHz 0.2 pF RISO Isolation Resistance V I-O = ±500 VDC, TA = 25°C 1011
Figure 14. Reflow Profile
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 8 H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Ordering Information
Figure 15. Top Mark Table 1. Top Mark Definitions
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative © Semiconductor Components Industries, LLC