H11A1 QT | Alldatasheet
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QT. PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS ee H11A1 H11A2 H11A3 H11A4 H11A5 PACKAGE DIMENSIONS ow The H11A series consists of a gallium arsenide infrared T . emitting diode. coupled with a silicon phototransistor in a 83 18 MAX dual in-ti SK 686 ual in-line package. MAX 6.10 03 Ome al = 7 FEATURES — oe 2.33 r = Power supply regulators REF ® Digital logic inputs = Microprocessor inputs 254 19 '® Appliance sensor systems P|] [TP = Industrial controls Ci Va = Underwriters Laboratory (UL) recognized—File FORA ae 53 #€90700 Ui T2540 \\ _,MIN i —t- 1.50 056 124
040 DIMENSIONS IN mm
AwoDe[t} {6]BASE od | a cou 3) {4}emr. 2079 Equivalent Circuit ABSOLUTE MAXIMUM RATINGS TOTAL PACKAGE DETECTOR Operating temperature <sssss. 55°C to 100°C —_Derate linearly (above 25°C) . 2.0 mw/°C INPUT DIODE yer bebe eee eee ees seveeeeees TOV Power dissipation (25°C ambient) . . -.+. 100 mW Con * i ben eneeeees, bees ™ Derate linearly (above 25°C ambient) ... 1.33 mw/°c Continuous collector current vee 100 m Peak forward current (1 us pulse, 300pps) 3A
foul PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS Forward voltage Ve Vd 15 Vv =10mA Breakdown voltage BV 30 v lc = 10mA, 1, =0 Collector to emitter Collector to base Emitter to Collector
foul PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTAONICS OO OO ee H11A1 H11A2 H11A3 H11A4 H11A5 10, TTT Vee = 10 05 Pw = 100 eT) 4 [[ monmauuzeo res | [vme-ty [| | | tonsarntenn aie TT 10, SS wZ SES a | Ten reat _—— 7 t ela [Seco j i | | | § v0, Lee Pee] | Bye, 47 F SSS SS 2 « | Tl | 3 a a 2 ot i in “i “T eae eel —— os es oe oo ee es ee | aa a of TIT TT torma steers Vp“VOLTS Vp- FORWARD VOLTAGE - VOLTS ‘swrrchma spaxp vs, coLLecron cunneNt Stir (nOY BaTunaTEs) size 1. Input Characteristics 2. Switching Speed vs. Collector Current (Not Saturated) ee] J_ i 5s 4 Nca=20v. YY SS WV) i £3 A a en rn Zan P| § 4 $ 10,.-——+ fhe 2 wl fA cen tov g io Wy Neos tov a ees 7 oe Ta = 25°C & V4 TA = 25°C n/a re) } YH as 4 1 0 338078160 Tas 6 330 78 700728 TacAMBIENT TEMPERATURE") So Ta* AMBIENT TEMPERATURE-"C os 3. Dark Iceo Current vs. Temperature 4. Ica vs. Temperature
QT PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS SS w FE HE B Eee Hea So I oe SSS eee 2 SS ee SSS SS SSS SS ay
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coo Titi ttt iilts sas ool ALTE 1 TTT "* oa to "o $00 on to "0 too Ip INPUT CURRENT mA snner Ip INPUT CURRENT mA nea 5. Output Current vs. Input Current 6. Output Current — Collector To Base vs. Input Current — FF — 10.0) SEES = 50 mA ey 10 — wonMatizeo To: =PEEE Sa geet cero Sao ett 2 i ip stoma 4 x ool
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: mE eet eet ee a a a ee ae amin HAR & of me) 8 § ee Oi AA = ee ee z Fae hil cau ATT 5 oo 4 ee re 7A 7A 3 rise tT) a a 0.001] a= Aa fA, oof VL TT EAH ‘Ta- AMBIENT TEMPERATURE -°C sri729 Vce - COLLECTOR TO EMITTER VOLTAGE - VOLTS: 7. tC . % Output Current vs. Temperature 8. Output Characteristics st1730