H116N8HFB HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H116N8HFB 80V SGT N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • UPS
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. H116N8HFB DFN5*6 H116N8HFB Tape&reel 5000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 80 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 116 AContinuous Drain Current TC=100℃ 73 IDM Pulsed Drain Current 400 PD Power Dissipation 89 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 320 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 1.4 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 50 ℃/ W VDSS RDS(ON)(Typ ) ID 80V 3.0mΩ 116A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 80 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=80V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=80V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2.0 2.7 4.0 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 3.0 3.5 mΩ VGS=10V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 4347 -- pF VGS=0V VDS=40V f=1MHz Coss Output Capacitance -- 7.3 -- Crss Reverse Transfer Capacitance -- 28 -- Rg Gate Resistance -- 1.2 -- Ω f=1MHz Qg Total Gate Charge -- 68 -- nC VDS=40V ID=20A VGS=10V Qgs Gate- to- Source Charge -- 13 -- Qgd Gate-to-Drain Charge -- 17 -- Switching Characteristics td(ON) Turn- on Delay Time -- 15 -- nS VDS=40V ID=20A RG=10Ω VGS=10V trise Rise Time -- 12 -- td(OFF) Turn- OFF Delay Time -- 52 -- tfall Fall Time -- 19 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.9 1.2 V IF=20A,VGS=0V trr Reverse Recovery Time -- 51 -- nS VR=40V,IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 61 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Symbol Unit: mm Min Max A 5.9 6.25 B 4.8 5.025 C 0.2 0.3 D 0.9 1.125 E 5.674 5.885 F 0.2 0.3 G 0.3 0.51 H 0.2 0.4 I 1.26 1.28