H115N10HD HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOMDS(ON)
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H115N10HD TO-252 Absolute Maximun Ratings °C(T =25 unless otherwise specified)J Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature 100 ±20 115 125 -55 ~ +150 Value V W A V = 100VDS ( )R =4.5mΩ Typ(on)DS I = 345A D,pulse Q = 71.2nCg Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply Packing Qty. (2)Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 1.0 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS A(2)Diode pulsed current , T =25 °CCIS,pulse 115 H115N10HD Tape&reel 2500 PCS N-Channel 100V/4.5mΩ MOSFET 345 345 Package & Pin information Pin1-Gate Pin2-Dran Pin3-Source Pin2-D Pin1-G Pin3-S TO-252 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5

Electrical Characteristics (T =25 unless otherwise specified)J °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0V, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current 194 Input Capacitance Output Capacitance Reverse Transfer Capacitance 5007 1550 pF V =0VGS V =25VDS f=100kHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 22.9 38.4 49.3 15.2 ns V =10VGS 50VV =DS I =50AD R =2ΩG(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge 71.2 21.8 19.1 nC V =10VGS 50VV =DS I =50AD μA V =100V, V =0VDS GS1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0V, I =24AGS S Max. V =50V R I =50ΑS di/dt=100A/μs ns nC 56.8 Qrr Reverse Recover Time Reverse Recovery Charge 76.2 Min. V RDS(on) Drain-Source On-State Resistance 4.5 5.5 mΩ V =10V, I =30AGS D Gate resistanceRG 2.5 f =1MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 5.1 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 2.3 trr Note (1) Calculated continuous current based on maximum allowable junction temperature. (2) Repetitive rating; pulse width limited by max. junction temperature. (3) P is based on max. junction temperature, using junction-case thermal resistance.D 2(4) The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25°C.A (5) V =50V, V =10V, L=0.3mH, starting T =25°CDD GS J www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5 Gate-Source Leakage Current V =±20VGSnA±100IGSS

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5 Electrical Characteristics Diagrams Fig1. Typ. output characteristics Drain-Source Voltage-V (V)DS 200 0 4 10 Drain-Source Current-I (A)D 250 300 450 8 10 Fig2. Typ. transfer characteristics Drain-Source Current-I (A)D Gate-Source Voltage-V (V)GS Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 80 3020 10 VDS =50V ID=50A Gate-Source Voltage-V (V)GS Fig5. Drain-source breakdown voltage Junction Temperature-T (°C)J 150100500-50 130 125 Drain-Source Breakdown Voltage -V (V)(BR)DSS 120 Fig6. Drain-source on-state resistance On Resistance -R (mΩ)DS(on) Junction Temperature-T (°C)J -50 V =10VDS T =25°CJ 105 150100500 VGS =10V ID=30A 150 100 Drain-Source Voltage-V (V)DS 20 40 60 100 310 410 Capacitance ( pF) Fig3. Typical Capacitance vs. Drain-to-Source Voltage Ciss V =0GS f =100kHz 115 110 6 8 350 400 010 210 800 40 50 60 70 V =10VGS 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V T =25°CJ Coss Crss V =0VGS I =250μAD

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 Source-Drain Voltage -V (V)SD 0.4 0.8 1.2 2.0 -110 010 110 310 Source Current- I (A)S Fig8. Forward characteristic of body diode T =25°CJ Fig9. Drain-source on-state resistance 450 Drain Current-I (A)D On Resistance -R (mΩ)DS(on) Fig7. Threshold voltage Junction Temperature-T (°C)J 150100500-50 3.9 2.7 3.3 Threshold Voltage-V (V)GS(th) 2.1 I =250μAD Fig10. Drain Current vs. Case Temperature Case Temperature-T (°C)C 12510050250 120 100 Drain-Source Continuous Current-I (A)D 150 Fig11. Safe Operating Area Drain-Source Voltage-V (V)DS Drain-Source Current-I (A)D 0.1ms 0.01ms 1ms 10msDC R LimitedDS(on) Fig12. Max. transient thermal impedance Rectangular Pulse Duration (sec) Thermal Response-Z (°C/W)thJC 150 200 210 010 110 010 T =25°CC 0.05 Single PulseV GS =5 .5V6 V6 .5V7 V7 .5V10V 2.4 3.0 350 1.8 3.6 1.6 50 100 250 300 400 D=1 0.5 0.2 0.1 0.02 0.01

UNIT: mm BACK VIEW L A c E D H e L2L1 HEAT-SINK PLANE 2×b Symbol A 2.402.18 b c D e H E L Min Nom Max 2.28 0.200 0.890.63 0.76 4.924.32 4.83 0.610.40 0.50 6.235.96 6.10 6.35 6.60

4.57 BSC

10.59.40 10.0 2.041.27 1.52 5.385.21 5.25 A2 1.170.88 1.02 b2 5.504.95 5.34 0.630.45 0.50 6.80 3.002.86 2.92 1.270.88 1.02 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5