HFA1100_04 INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Excellent Gain Flatness
  • Operates with 5V Single Supply (See AN9745)
  • Pb-Free Available (RoHS Compliant)

Applications

  • Video Switching and Routing
  • Pulse and Video Amplifiers
  • RF/IF Signal Processing
  • Flash A/D Driver
  • Medical Imaging Systems
  • Related Literature - AN9420, Current Feedback Theory - AN9202, HFA11XX Evaluation Fixture - AN9745, Single 5V Supply Operation Pinout HFA1100 (PDIP, SOIC) TOP VIEW

Ordering Information

(BRAND) TEMP. RANGE (°C) PACKAGE PKG. DWG. # HFA1100IP -40 to 85 8 Ld PDIP E8.3 HFA1100IB (H1100I) -40 to 85 8 Ld SOIC M8.15 HFA1100IB96 (H1100I) -40 to 85 8 Ld SOIC Tape and Reel M8.15 HFA1100IBZ (Note) (H1100I) -40 to 85 8 Ld SOIC (Pb-free) M8.15 HFA1100IBZ96 (Note) (H1100I) -40 to 85 8 Ld SOIC Tape and Reel (Pb-free) M8.15 HFA11XXEVAL DIP Evaluation Board for High-S peed Op Amps NOTE: Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C. INPUT 220MHz SIGNAL OUTPUT (AV = 2) HFA1100 OP AMP 0ns 25ns NC -IN +IN NC OUT NC Data Sheet October 26, 2004 FN2945.9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2000, 2004. All Rights Reserved All other trademarks mentioned are the property of their respective owners.

2 FN2945.9 Absolute Maximum Ratings TA = 25°C Thermal Information Operating Conditions Thermal Resistance (Typical, Note 1) θJA (°C/W) θJC (°C/W) (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Abs olute Maximum Ratings” may cause permanent dam age to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 510Ω , RL = 100Ω , Unless Otherwise Specified PARAMETER TEST CONDITIONS (NOTE 2) TEST LEVEL TEMP. (°C) MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (Note 3) A 25 - 2 6 mV AF u l l - - 1 0 m V Input Offset Voltage Drift C Full - 10 - µV/°C VIO CMRR ∆VCM = ±2V A 25 40 46 - dB AF u l l 3 8 - - d B VIO PSRR ∆VS = ±1.25V A 25 45 50 - dB AF u l l 4 2 - - d B Non-Inverting Input Bias Current (Note 3) +IN = 0V A 25 - 25 40 µA AF u l l - - 6 5 µA +IBIAS Drift C Full - 40 - nA/°C +IBIAS CMS ∆VCM = ±2V A 25 - 20 40 µA/V AF u l l - - 5 0 µA/V Inverting Input Bias Current (Note 3) -IN = 0V A 25 - 12 50 µA AF u l l - - 6 0 µA -IBIAS Drift C Full - 40 - nA/°C -IBIAS CMS ∆VCM = ±2V A 25 - 1 7 µA/V AF u l l - - 1 0 µA/V -IBIAS PSS ∆VS = ±1.25V A 25 - 6 15 µA/V AF u l l - - 2 7 µA/V Non-Inverting Input Resistance A 25 25 50 - k Ω Inverting Input Resistance C 25 - 20 30 Ω Input Capacitance (Either Input) B 25 - 2 - pF Input Common Mode Range C Full ±2.5 ±3.0 - V Input Noise Voltage (Note 3) 100kHz B 25 - 4 - nV/ √Hz +Input Noise Current (Note 3) 100kHz B 25 - 18 - pA/ √Hz -Input Noise Current (Note 3) 100kHz B 25 - 21 - pA/ √Hz TRANSFER CHARACTERISTICS AV = +2, Unless Otherwise Specified Open Loop Transimpedance (Note 3) B 25 - 300 - k Ω HFA1100

3 FN2945.9 -3dB Bandwidth (Note 3) V OUT = 0.2VP-P, AV = +1 B 25 530 850 - MHz -3dB Bandwidth V OUT = 0.2VP-P, AV = +2, RF = 360Ω B2 5 - 6 7 0 - M H z Full Power Bandwidth V OUT = 4VP-P, AV = -1 B2 5 - 3 0 0 - M H z Gain Flatness (Note 3) To 100MHz B 25 - ±0.14 - dB Gain Flatness To 50MHz B 25 - ±0.04 - dB Gain Flatness To 30MHz B 25 - ±0.01 - dB Linear Phase Deviation (Note 3) DC to 100MHz B 25 - 0.6 - Degrees Differential Gain NTSC, R L = 75Ω B 25 - 0.03 - % Differential Phase NTSC, R L = 75Ω B 25 - 0.05 - Degrees Minimum Stable Gain A Full 1 - - V/V OUTPUT CHARACTERISTICS AV = +2, Unless Otherwise Specified Output Voltage (Note 3) A V = -1 A 25 ±3.0 ±3.3 - V AF u l l ±2.5 ±3.0 - V Output Current R L = 50Ω, AV = -1 A 25, 85 50 60 - mA A -40 35 50 - mA DC Closed Loop Output Impedance (Note 3) B 25 - 0.07 - Ω 2nd Harmonic Distortion (Note 3) 30MHz, V OUT = 2VP-P B2 5 - - 5 6 - d B c 3rd Harmonic Distortion (Note 3) 30MHz, V OUT = 2VP-P B2 5 - - 8 0 - d B c 3rd Order Intercept (Note 3) 100MHz B 25 20 30 - dBm 1dB Compression 100MHz B 25 15 20 - dBm TRANSIENT RESPONSE AV = +2, Unless Otherwise Specified Rise Time V OUT = 2.0V Step B 25 - 900 - ps Overshoot (Note 3) V OUT = 2.0V Step B 25 - 10 - % Slew Rate A V = +1, VOUT = 5VP-P B 25 - 1400 - V/ µs Slew Rate A V = +2, VOUT = 5VP-P B 25 1850 2300 - V/ µs 0.1% Settling (Note 3) V OUT = 2V to 0V B 25 - 11 - ns 0.2% Settling (Note 3) V OUT = 2V to 0V B 25 - 7 - ns Overdrive Recovery Time 2X Overdrive B 25 - 7.5 10 ns POWER SUPPLY CHARACTERISTICS Supply Voltage Range B Full ±4.5 - ±5.5 V Supply Current (Note 3) A 25 - 21 26 mA AF u l l - - 3 3 m A NOTES: 3. See Typical Performance Curves for more information. Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 510Ω , RL = 100Ω , Unless Otherwise Specified (Continued) PARAMETER TEST CONDITIONS (NOTE 2) TEST LEVEL TEMP. (°C) MIN TYP MAX UNITS HFA1100

4 FN2945.9

Application Information

Optimum Feedback Resistor (RF) The enclosed plots of inverting and non-inverting frequency response detail the performance of the HFA1100 in various gains. Although the bandwidth dependency on A CL isn’t as severe as that of a voltage feedback amplifier, there is an appreciable decrease in bandwidth at higher gains. This decrease can be minimized by taking advantage of the current feedback amplifier’s unique relationship between bandwidth and R F. All current feedback amplifiers require a feedback resistor, even for unity gain applications, and the R F, in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier’s bandwidth is inversely proportional to R F. The HFA1100 design is optimized for a 510Ω RF, at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot (Note: Capacitive feedback causes the same problems due to the feedback impedance decrease at higher frequencies). At higher gains the amplifier is more stable, so R F can be decreased in a trade-off of stability for bandwidth. The table below lists recommended R F values for various gains, and the expected bandwidth. 5V Single Supply Operation This amplifier operates at single supply voltages down to 4.5V. The table below details the amplifier’s performance with a single 5V supply. The dramatic supply current reduction at this operating condition (refer also to Figure 23) makes these op amps even better choices for low power 5V systems. Refer to Application Note AN9745 for further information. Use of Die in Hybrid Applications This amplifier is designed with compensation to negate the package parasitics that typically lead to instabilities. As a result, the use of die in hybrid applications results in overcompensated performance due to lower parasitic capacitances. Reducing R F below the recommended values for packaged units will solve the problem. For AV = +2 the recommended starting point is 300Ω, while unity gain applications should try 400Ω. PC Board Layout The frequency performance of this amplifier depends a great deal on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value chip (0.1µF) capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Output capacitance, such as that resulting from an improperly terminated transmission line will degrade the frequency response of the amplifier and may cause oscillations. In most cases, the oscillation can be avoided by placing a resistor in series with the output. Care must also be taken to minimize the capacitance to ground seen by the amplifier’s inverting input. The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces connected to pin 2, and connections to pin 2 should be kept as short as possible. An example of a good high frequency layout is the Evaluation Board shown below. Evaluation Board An evaluation board is available for the HFA1100 (Part Number HFA11XXEVAL). Please contact your local sales office for information. ACL RF (Ω)B W ( M H z ) +1 510 850 -1 430 580 +2 360 670 +5 150 520 +10 180 240 +19 270 125 PARAMETER TYP Input Common Mode Range 1V to 4V -3dB BW (A V = +2) 267MHz Gain Flatness (to 50MHz, AV = +2) 0.05dB Output Voltage (AV = -1) 1.3V to 3.8V Slew Rate (AV = +2) 475V/ µs 0.1% Settling Time 17ns Supply Current 5.5mA HFA1100

FIGURE 17. 2nd HARMONIC DISTORTION vs P OUT FIGURE 18. 3rd HARMONIC DISTORTION vs P OUT FIGURE 19. OVERSHOOT vs INPUT RISE TIME FI GURE 20. OVERSHOOT vs INPUT RISE TIME FIGURE 21. OVERSHOOT vs FEEDBACK RESIST OR FIGURE 22. SUPPLY CURRENT vs TEMPERATURE

30 OVERSHOOT (%)

15 OVERSHOOT (%)

FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 24. V IO AND BIAS CURRENTS vs TEMPERATURE FIGURE 25. OUTPUT VOLTAGE vs TEMPERAT URE FIGURE 26. INPUT NOISE vs FREQUENCY

2.4 INPUT OFFSET VOLTAGE (mV)

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnishe d by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN2945.9 Die Characteristics DIE DIMENSIONS: 63 mils x 44 mils x 19 mils 1600µm x 1130µm METALLIZATION: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16kÅ ±0.8kÅ PASSIVATION: Type: Nitride Thickness: 4kÅ ±0.5kÅ TRANSISTOR COUNT: SUBSTRATE POTENTIAL (POWERED UP): Floating (Recommend Connection to V-) Metallization Mask Layout HFA1100 +IN VL BAL OUT -IN BAL VH HFA1100